SDA 30C162
Abstract: 30C162 smd code A9 3 pin transistor transistor 313 smd gpl05 smd code book a7 transistor P-LCC-68-1 30C16 megatext P-SDIP-52-1
Text: ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases: 11.96
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UES04659
GPL05099
P-LCC-68-1
GPD05262
P-SDIP-52-1
SDA 30C162
30C162
smd code A9 3 pin transistor
transistor 313 smd
gpl05
smd code book a7 transistor
P-LCC-68-1
30C16
megatext
P-SDIP-52-1
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smd transistor marking A10
Abstract: smd transistor marking A6 SDA 30C162 smd transistor wc 30C162 TRANSISTOR SMD MARKING CODE 5b smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a6 SMD transistor MARKING CODE 312 diode smd marking BUF
Text: ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases: 11.96
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GPL05099
GPD05262
P-SDIP-52-1
smd transistor marking A10
smd transistor marking A6
SDA 30C162
smd transistor wc
30C162
TRANSISTOR SMD MARKING CODE 5b
smd code A9 3 pin transistor
TRANSISTOR SMD MARKING CODE a6
SMD transistor MARKING CODE 312
diode smd marking BUF
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ad 161 transistor
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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16N170
16N170
O-268
O-247
ad 161 transistor
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752 J 1600 V CAPACITOR
Abstract: 16N170 BiMOSFET
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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16N170
O-268
O-247
752 J 1600 V CAPACITOR
16N170
BiMOSFET
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16N170
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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16N170A
16N170A
O-268
O-247
16N170
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42N170
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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42N170
42N170
O-268
O-247
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16N170A
Abstract: diode 22 161 smd
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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16N170A
16N170A
diode 22 161 smd
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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42N170
O-247
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PSMN004-25B
Abstract: PSMN004-25P
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN004-25B,
PSMN004-25P
PSMN004-25P
O220AB)
PSMN004-25B
OT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN004-25B,
PSMN004-25P
PSMN004-25P
O220AB)
PSMN004-25B
OT404
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PSMN004-25
Abstract: SOT404 channel p PSMN004-25B PSMN004-25P
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN004-25B,
PSMN004-25P
PSMN004-25P
O220AB)
PSMN004-25B
OT404
PSMN004-25
SOT404 channel p
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PSMN005-55B
Abstract: PSMN005-55P
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN005-55B,
PSMN005-55P
PSMN005-55P
O220AB)
PSMN005-55B
OT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN005-55B,
PSMN005-55P
PSMN005-55P
O220AB)
PSMN005-55B
OT404
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SMD marking code 55B
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;
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PSMN005-55B;
PSMN005-55P
PSMN005-55P
SMD marking code 55B
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DT94-15
Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
Text: App. Notes Design Tips Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors
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INT-936
AN-936)
INT-937
Jun-96
Oct-98
DT94-15
ir21xx
SCR gate drive circuit
3 phase IGBT inverter design by ir2130
HEXFEt Power MOSFET Design Guide
3 phase dc control ir2130
HV Floating MOS-Gate Driver circuits
GBAN-PVI-1
DT-93-4
AN-948
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siemens sda
Abstract: No abstract text available
Text: SIEMENS ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases:
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GPL05099
P-SDIP-52-1
siemens sda
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30C162
Abstract: 12x10 character TRANSISTOR SMD MARKING CODE kh "character rom" siemens S43 SMD marking code AE SMD Transistor siemens flash smd marking KH 235L P-LCC-68-1
Text: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update
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P-SDIP-52-1
30C162
12x10 character
TRANSISTOR SMD MARKING CODE kh
"character rom" siemens
S43 SMD
marking code AE SMD Transistor
siemens flash
smd marking KH
235L
P-LCC-68-1
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siemens sda
Abstract: SDA 30C162
Text: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update
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fl23Sb05
P-SDIP-52-1
1524H
siemens sda
SDA 30C162
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transistor buz 104
Abstract: No abstract text available
Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package
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O-220
C67078-S1353-A2
transistor buz 104
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transistor smd qh
Abstract: transistor book SDA 30C162
Text: SIEMENS ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases:
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gploso99
P-SDIP-52-1
transistor smd qh
transistor book
SDA 30C162
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transistor SMD t70
Abstract: BUZ104
Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V
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O-220
BUZ104
C67078-S1353-A2
a23SbÃ
GPT05155
fl235b05
00fi4Sc
transistor SMD t70
BUZ104
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5C smd
Abstract: PSMN004-25B PSMN004-25P SC18 T0220AB
Text: Product specification Philips Semiconductors S ilic o n liifiU N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P SYMBOL FEATURES QUICK REFERENCE DATA d • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN004-25B,
PSMN004-25P
PSMN004-25P
T0220AB)
PSMN004-25B
5C smd
SC18
T0220AB
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Untitled
Abstract: No abstract text available
Text: BUZ 173 Infineon technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds to flDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 £2 TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1452-A2
S35bG5
Q133777
SQT-89
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smd transistor l32
Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter
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BLV945B
OT324
OT324
7110fl2fc.
OT324.
ocn23ia
smd transistor l32
SMD Transistor SAs
transistor SMD t30
sas smd transistor
SMD l32 Transistor
SMD L31
SMD CAPACITOR L29
SMD Transistor t30
SMD electrolytic capacitor
SMD CAPACITOR L27
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