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    SMD 6C TRANSISTOR MARKING Search Results

    SMD 6C TRANSISTOR MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD 6C TRANSISTOR MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD TRANSISTOR MARKING 6C

    Abstract: smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b
    Text: Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage IC = 10 mA


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    BC817W BC817-25W BC817-40W BC817-16W SMD TRANSISTOR MARKING 6C smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b PDF

    smd transistor w1a

    Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
    Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the


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    CX-49G, CX-40F HC-49/U HC-49U-S 31-Dec-04 CX-49L smd transistor w1a smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor PDF

    fire alarm using thermistor

    Abstract: NTC 15D principle of heat sensor with fan cooling 15d smd transistor ntc 100-9 VISHAY VDR PTC nonlinear resistors Circuit Protection Devices NTC Thermistors rate of rise heat detectors smd transistor 15d
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . P TC a nd NTC T he r mistor s, T hrough - Hole Va r istor s r e s i s t i v e p r o d uc t s Circuit Protection with Non-Linear Resistors capabilities w w w. v i s h a y. c o m Circuit Protection with Non-Linear Resistors


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    VMN-PL0436-1009 fire alarm using thermistor NTC 15D principle of heat sensor with fan cooling 15d smd transistor ntc 100-9 VISHAY VDR PTC nonlinear resistors Circuit Protection Devices NTC Thermistors rate of rise heat detectors smd transistor 15d PDF

    sensor BPW34 application note

    Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,


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    VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note PDF

    DIN 58405

    Abstract: No abstract text available
    Text: ILD223T Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package FEATURES • Two channel optocoupler • High current transfer ratio at IF = 1.0 mA, 500 % minimum A 1 8C • Isolation test voltage, 4000 VRMS C 2 7E A 3 6C • Electrical specifications similar to standard 6-pin


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    ILD223T i179042 ILD233T 11-Mar-11 DIN 58405 PDF

    draloric cermet potentiometer

    Abstract: Dale Electronics thermistors roederstein smd resistor NTC 15D tansitor 15d smd transistor passive component infrared emitters and detectors non-linear resistors thermistors philips roederstein ESTA
    Text: Vishay Intertechnology, Inc. Company Overview www.vishay.com About Vishay Intertechnology Growth through Innovations and Acquisitions Vishay Intertechnology was founded in 1962 by Dr. Felix Zandman, with the financial support of Alfred P. Slaner. The Company was named after the village in Lithuania where


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    c466-7160 VMN-MS6401-1010 draloric cermet potentiometer Dale Electronics thermistors roederstein smd resistor NTC 15D tansitor 15d smd transistor passive component infrared emitters and detectors non-linear resistors thermistors philips roederstein ESTA PDF

    TRANSISTOR 12N50C3

    Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
    Text: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB12N50C3 P-TO263-3-2 Q67040-S4641 12N50C3 TRANSISTOR 12N50C3 12N50C3 SPB12N50C3 SPP12N50C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


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    SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 PDF

    17n80c3

    Abstract: SP000216353
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated


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    SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 SPA17N80C3 17N80C3 17N80C3 SP000216353 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB17N80C3 P-TO263-3-2 SPB17N80C3 Q67040-S4354 17N80C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB21N50C3 P-TO263-3-2 SPB21N50C3 Q67040-S4566 21N50C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 PDF

    12n50c

    Abstract: DSA+1-16a
    Text: SPB12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB12N50C3 PG-TO263 Q67040-S4641 12N50C3 12n50c DSA+1-16a PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


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    SPB17N80C3 PG-TO263 SPB17N80C3 Q67040-S4354 17N80C3 PDF

    21n50c3

    Abstract: 21N50C PG-TO263 21n50 SPP21N50C3 PG-TO263-3-2 SPB21N50C3
    Text: SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 21n50c3 21N50C PG-TO263 21n50 SPP21N50C3 PG-TO263-3-2 SPB21N50C3 PDF

    17n80c3

    Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


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    SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17n80c3 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 SPP17N80C3 PDF

    17n80c3

    Abstract: UJ14
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


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    SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220 SPA17N80C3 Q67040-S4353 17n80c3 UJ14 PDF

    SPB21N50C3

    Abstract: No abstract text available
    Text: SPB21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB21N50C3 PG-TO263 SPB21N50C3 Q67040-S4566 21N50C3 PDF

    12N50c

    Abstract: 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v
    Text: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB12N50C3 PG-TO263 Q67040-S4641 12N50C3 12N50c 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v PDF

    PEMD18

    Abstract: PUMD18 PEMB18 PEMB1 PEMH18
    Text: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 4 — 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.


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    PEMH18; PUMH18 PEMH18 OT666 OT363 PEMD18 PEMB18 SC-88 PUMD18 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18 PDF

    SMD TRANSISTOR MARKING 6C

    Abstract: TRANSISTOR SMD MARKING CODE h5 smd marking T1 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18
    Text: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 4 — 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.


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    PEMH18; PUMH18 PEMH18 OT666 OT363 PEMD18 PEMB18 SC-88 PUMD18 SMD TRANSISTOR MARKING 6C TRANSISTOR SMD MARKING CODE h5 smd marking T1 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18 PDF

    SMD 100 6n cap

    Abstract: smd transistor marking 6n SMD TRANSISTOR MARKING 6C
    Text: Wißt H E W L E T T mLfïM P A C K A R D Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N 134* 81028 HCPL-563X HCPL-663X Technical Data 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X :'See m atrix for available extensions. F eatu res


    OCR Scan
    HCPL-563X HCPL-663X HCPL-268K HCPL-665X HCPL-560X MIL-PRF-38534 QML-38534, 6N137, HCPL-2601, HCPL2630/-31 SMD 100 6n cap smd transistor marking 6n SMD TRANSISTOR MARKING 6C PDF

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan
    DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p PDF

    2d SMD PNP TRANSISTOR

    Abstract: NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23
    Text: CENTRAL SEMICONDUCTOR 50E D nñnb3 CEN D D D Q S l l 3Gb SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 CMPT3906 CMPT4401 CMPT4403 CMPT5086 CMPT5087 CMPT5088


    OCR Scan
    DGDQS11 OT-23 350mW cmpt918 2n918 cmpt2222a 2n2222a cmpt2369 2n2369 cmpt2484 2d SMD PNP TRANSISTOR NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23 PDF