29024
Abstract: burndy burndy ms N28F010 28f010-200
Text: intd. ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/
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SM001FLKA
80-Pln
SM001
80-PIN
SM001FLKA-120
iSM001
FLKA-200
ER-20,
ER-24,
29024
burndy
burndy ms
N28F010
28f010-200
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85C220
Abstract: LIM EMS 4.0 zener 6352 transistor 6cn
Text: In te l APPLICATION NOTE AP-343 October 1990 Solutions for High Density Applications Using Intel Flash Memory MARKUS A. LEVY DALE ELBERT APPLICATIONS E N G IN E ER IN G IN TEL C O R PO R A TIO N Order Number: 292079-001 6-297 6 Solutions For High Density Applications
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AP-343
85C220
LIM EMS 4.0
zener 6352
transistor 6cn
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QA16
Abstract: SM28F001AX 29024
Text: intei ÌSM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/
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OCR Scan
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PDF
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SM001FLKA
80-Pin
SM001FLKA-120
SM001
FLKA-200
ER-20,
ER-24,
28F010
RR-60,
AP-316,
QA16
SM28F001AX
29024
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28f010-200
Abstract: No abstract text available
Text: in te i ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ 10,000 Rewrite Cycles Minimum/ Component ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ 16 p,s Typical Word Write
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SM001FLKA
80-Pln
iSM001FLKA-120
FLKA-200
ER-20,
ER-24,
28F010
RR-60,
AP-316,
AP-325,
28f010-200
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