ISM001 Search Results

ISM001 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ISM001FLKA-120		Intel	1 MBYTE (512K x 16) CMOS Fash SIMM		Scan	PDF
ISM001FLKA-200		Intel	1 MBYTE (512K x 16) CMOS Fash SIMM		Scan	PDF

ISM001 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
29024 Abstract: burndy burndy ms N28F010 28f010-200 Text: intd. ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/	OCR Scan	PDF	SM001FLKA 80-Pln SM001 80-PIN SM001FLKA-120 iSM001 FLKA-200 ER-20, ER-24, 29024 burndy burndy ms N28F010 28f010-200
85C220 Abstract: LIM EMS 4.0 zener 6352 transistor 6cn Text: In te l APPLICATION NOTE AP-343 October 1990 Solutions for High Density Applications Using Intel Flash Memory MARKUS A. LEVY DALE ELBERT APPLICATIONS E N G IN E ER IN G IN TEL C O R PO R A TIO N Order Number: 292079-001 6-297 6 Solutions For High Density Applications	OCR Scan	PDF	AP-343 85C220 LIM EMS 4.0 zener 6352 transistor 6cn
QA16 Abstract: SM28F001AX 29024 Text: intei ÌSM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/	OCR Scan	PDF	SM001FLKA 80-Pin SM001FLKA-120 SM001 FLKA-200 ER-20, ER-24, 28F010 RR-60, AP-316, QA16 SM28F001AX 29024
28f010-200 Abstract: No abstract text available Text: in te i ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ 10,000 Rewrite Cycles Minimum/ Component ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ 16 p,s Typical Word Write	OCR Scan	PDF	SM001FLKA 80-Pln iSM001FLKA-120 FLKA-200 ER-20, ER-24, 28F010 RR-60, AP-316, AP-325, 28f010-200