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    SKM300GB12T4 Price and Stock

    SEMIKRON SKM300GB12T4

    Igbt Array & Module Transistor, Dual N Channel, 422 A, 1.85 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM300GB12T4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM300GB12T4 Bulk 10 1
    • 1 $282.48
    • 10 $282.48
    • 100 $282.48
    • 1000 $282.48
    • 10000 $282.48
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    Richardson RFPD SKM300GB12T4 1
    • 1 -
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    • 100 -
    • 1000 -
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    Win Source Electronics SKM300GB12T4 812
    • 1 $83.479
    • 10 $67.827
    • 100 $67.827
    • 1000 $67.827
    • 10000 $67.827
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    SEMIKRON SKM300GB12T4 22892070

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 324A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM300GB12T4 22892070 1
    • 1 $293.42
    • 10 $232.52
    • 100 $232.52
    • 1000 $232.52
    • 10000 $232.52
    		Get Quote

    SKM300GB12T4 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKM300GB12T4 Semikron IGBT4 Modules Original PDF

    SKM300GB12T4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SKM300GB12T4

    Abstract: No abstract text available
    Text: SKM300GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353


    Original     		PDF SKM300GB12T4 SKM300GB12T4

    Untitled

    Abstract: No abstract text available
    Text: SKM300GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM300GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		PDF SKM300GB12T4

    Untitled

    Abstract: No abstract text available
    Text: SKM300GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353


    Original     		PDF SKM300GB12T4

    Untitled

    Abstract: No abstract text available
    Text: SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C


    Original     		PDF SKM300GBD12T4

    Untitled

    Abstract: No abstract text available
    Text: SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM300GBD12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		PDF SKM300GBD12T4

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    SKM300GBD12T4

    Abstract: SKM400GB12T4
    Text: SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM300GBD12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		PDF SKM300GBD12T4 SKM300GBD12T4 SKM400GB12T4

    SKM300GBd

    Abstract: SKM300GBd12t4 SKM300GBD12 SKM400GB12T4 SKM300GBD12T SKM400GB12
    Text: SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM300GBD12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		PDF SKM300GBD12T4 SKM300GBD12T4 SKM300GBd SKM300GBD12 SKM400GB12T4 SKM300GBD12T SKM400GB12