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    SEMIX453GB12E4 Price and Stock

    SEMIKRON SEMIX453GB12E4S

    Igbt, Module, 1.2Kv, 683A, Semix 3S; Continuous Collector Current:683A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX453GB12E4S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX453GB12E4S Bulk 40 1
    • 1 $285.36
    • 10 $285.36
    • 100 $285.36
    • 1000 $285.36
    • 10000 $285.36
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    Richardson RFPD SEMIX453GB12E4S 1
    • 1 -
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    SEMIKRON SEMIX453GB12E4P 27895004

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX453GB12E4P 27895004 1
    • 1 $728.25
    • 10 $574.76
    • 100 $517.62
    • 1000 $517.62
    • 10000 $517.62
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    SEMIKRON SEMIX453GB12E4I33P 27897020

    Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX453GB12E4I33P 27897020 1
    • 1 $778.67
    • 10 $613.97
    • 100 $553.47
    • 1000 $553.47
    • 10000 $553.47
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    SEMIKRON SEMIX453GB12E4S 27890140

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX453GB12E4S 27890140 1
    • 1 $717.05
    • 10 $565.8
    • 100 $509.78
    • 1000 $509.78
    • 10000 $509.78
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    SEMIKRON SEMIX453GB12E4IP 27897004

    Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX453GB12E4IP 27897004 1
    • 1 $751.78
    • 10 $593.81
    • 100 $534.43
    • 1000 $534.43
    • 10000 $534.43
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    SEMIX453GB12E4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX453GB12E4s E63532

    SEMiX453GB12E4

    Abstract: No abstract text available
    Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX453GB12E4s SEMiX453GB12E4s E63532 SEMiX453GB12E4

    SEMIX453GB12E4s

    Abstract: No abstract text available
    Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GB12E4s E63532 SEMIX453GB12E4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GB12E4s E63532 ApplMiX453GB12E4s

    SEMiX453GB12E4

    Abstract: No abstract text available
    Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C


    Original     		PDF SEMiX453GB12E4s E63532 SEMiX453GB12E4

    SEMIX453GB12E4s

    Abstract: No abstract text available
    Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GB12E4s E63532 SEMIX453GB12E4s

    SEMiX453GB12E4

    Abstract: SEMIX453GB12E4S
    Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GB12E4s E63532 SEMiX453GB12E4 SEMIX453GB12E4S

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1