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    2SK3356-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation

    SK3356 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SK3356 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SK3356 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    SK3356 Thompson Components Bipolar Transistor Selection Guide Scan PDF
    SK3356 Thompson Components Bipolar Transistor Selection Guide Scan PDF
    SK3356-RT Unknown Shortform Transistor PDF Datasheet Short Form PDF

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    Untitled

    Abstract: No abstract text available
    Text: SK3356 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.


    Original     		PDF SK3356 Freq200M

    PE108B

    Abstract: PE108A BF248 BFY18 2SC123 2SC185 2SC357 JE9123 2SC2058 BSW42
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 See Index See Index GE Solid St Solid Stlnc See Index PhilipsElec AmperexElec FerrantiLtd See Index FerrantiLtd ~~g~~~7L ~~~~~I~cJA 2SC123 BC818•25 2SC1851 2SC1851 2SC1851 2S01617K PE108A


    Original     		PDF 2SC1317 2SC1346 SK3356 2SC963 BCX20 BCX20R BC818 ZTX338 PE108B PE108A BF248 BFY18 2SC123 2SC185 2SC357 JE9123 2SC2058 BSW42

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    SK3440

    Abstract: SK3261 SK3265 SK3275 SK3274 SK3260 SK3293 SK3297 SK3441 sk3299
    Text: TMftttSON/ D I S T R I B U T O R E 3 B IPO LAR TRANSISTORS SflE D • ^ 0 5 ^ 8 7 3 0 0 0 4 3 1 ^ T 34 ■ TCSK com . Maximum Ratings Bieakdown Voltages Device Polarity & Material TCE Type Application 'complementary device type Device Power Dissipata Collector


    OCR Scan     		PDF SK3247 SK3248 SK3250 SK3251 SK3253 SK3259 T-036 SK3274 T-021 SK3275 SK3440 SK3261 SK3265 SK3275 SK3274 SK3260 SK3293 SK3297 SK3441 sk3299

    SK3239

    Abstract: sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052
    Text: THOMSON/ DISTRIBUTOR 2bE D • T □ E h Ö 73 O G G H O S T I ■ Bipolar Transistors / y jy j MAXIMUM RATINGS TCE Type 2SD822 Breakdown Voltages Device Device Collector Material & Power Current Base Collector- Collector- Emitter- Polarity Dissipate. Continuous


    OCR Scan     		PDF 2SD822 2SD822BULK SK3003A SK3004 SK3006 22440m2 OF031A OF370F I47in DF346A SK3239 sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052

    AH 106 05 Thomson

    Abstract: sk3716 SK3717 SK3563 BLM21PG600SN1D SK3444-123A SK3360/280MP SK3441 SK3444/123A SK3528/397
    Text: THOMSON/ DISTRIBUTOR DTE D | ^0 2 ^ 0 7 3 3ipolar Transistors cont’d _ ._ LIMIT CONDITIONS □□□33t.S □ | ''T -V S-O S CHARACTERISTICS BREAKDOWN VOLTAGE RCA Type Polarity and Material Device Dissi­ pation Collector Current Contin­


    OCR Scan     		PDF 33fci5 SK326S T-005 SK3270 T-043 SK3272 T-040 SK3273 T0-220 T-036 AH 106 05 Thomson sk3716 SK3717 SK3563 BLM21PG600SN1D SK3444-123A SK3360/280MP SK3441 SK3444/123A SK3528/397