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    BFY18 Search Results

    BFY18 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFY18 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    BFY18 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    BFY18 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFY18 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    BFY18 Unknown Shortform Transistor Datasheet Guide Scan PDF
    BFY18 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFY18 Unknown Shortform Transistor PDF Datasheet Scan PDF
    BFY18 Unknown Shortform Transistor PDF Datasheet Scan PDF
    BFY18 Unknown Transistor Replacements Scan PDF
    BFY18 SGS-Ates Misc. Data Book Scans 1975/76 Scan PDF
    BFY18 STC Early Transistors Scan PDF
    BFY18 ZaeriX Short Form Data Catalogue 1972-73 Scan PDF
    BFY180 Infineon Technologies BFY180 Original PDF
    BFY180 Siemens HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) Original PDF
    BFY180ES Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY180ES Siemens HiRel NPN silicon RF transistor Original PDF
    BFY180H Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY180H Siemens HiRel NPN silicon RF transistor Original PDF
    BFY180P Infineon Technologies HiRel NPN Silicon RF Transistor Original PDF
    BFY180P Siemens HiRel NPN silicon RF transistor Original PDF

    BFY18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFY181

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181 Q62702F1607 QS9000 BFY181

    Untitled

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181 BFY181 Q62702F1607 Q62702in QS9000

    Q62702F1609

    Abstract: No abstract text available
    Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 BFY183 Q62702F1609 Q62702F1713 QS9000

    Untitled

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181

    BFY181

    Abstract: No abstract text available
    Text: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181. BFY181 BFY181

    Untitled

    Abstract: No abstract text available
    Text: BFY183 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183

    BFY193

    Abstract: BFY183
    Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 Q62702F1609 QS9000 BFY193 BFY183

    Q971

    Abstract: BFY180
    Text: BFY180 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • Space Qualified


    Original     		PDF BFY180 Q97301013 QS9000 Q971 BFY180

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified


    Original     		PDF BFY182 BFY182

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182 BFY182

    Microwave PIN diode

    Abstract: 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation
    Text: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: family given in bracketts • CGY40: (CGY41), Side 2 • CFY66: (CFY67), Side 3 • BXY42: (BXY43, BXY44), Side 4 - 5 • BFY193: (BFY180, BFY280,


    Original     		PDF CGY40: CGY41) CFY66: CFY67) BXY42: BXY43, BXY44) BFY193: BFY180, BFY280, Microwave PIN diode 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation

    Untitled

    Abstract: No abstract text available
    Text: BFY181 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz


    Original     		PDF BFY181 BFY181

    Untitled

    Abstract: No abstract text available
    Text: BFY183 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz


    Original     		PDF BFY183 BFY183

    Untitled

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182

    q973

    Abstract: No abstract text available
    Text: BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified


    Original     		PDF BFY180 BFY180 Q97301013 Q97111419 QS9000 q973

    SIEMENS MICROWAVE RADIO 8 GHz

    Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING

    XY 805 ic

    Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
    Text: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006


    Original     		PDF Q97301013 Q97111419 Q97111419 BFY180 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 XY 805 ic microwave transducer marking A04 on semiconductor marking code A04

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    siemens spc 2

    Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
    Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are


    Original     		PDF de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz


    OCR Scan     		PDF BFY183 Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz


    OCR Scan     		PDF BFY182 Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 FY182 GXM05552

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •


    OCR Scan     		PDF BFY180 Q97301013 Q97111419 BFY180 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552

    A21E

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz


    OCR Scan     		PDF BFY181 Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A21E

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C