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    SJE TRANSISTOR Search Results

    SJE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SJE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bfr93

    Abstract: DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17
    Text: N AMER PHILIPS/DISCRETE S5E D • ^53^31 QGlfiG7S Q ■ BFR93 T -3I-I7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a SOT-23 plastic envelope. It is primarily intended fo r use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,


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    BFR93 OT-23 BFT93. T-31-17 bfr93 DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17 PDF

    BFR49

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D □ ^ £ 3 = 1 3 1 0017133 a • BFR49 BFF9UA is recommended for new design T -3 /-H N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in


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    BFR49 bbS-3131 BFR49 PDF

    Transistor SJE 5331

    Abstract: BFR49 sje 5331 transistor SJE 5331 IEC134
    Text: A ME R PHILIPS/DISCRETE 2SE D • Lfci53cì31 O G l ? ^ & BFR49 BFR4 \^ _ BHH9UA is recommended for new design r-ti-ii N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in


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    BHH90A BFR49 T-3J-11 Transistor SJE 5331 BFR49 sje 5331 transistor SJE 5331 IEC134 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.


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    BFQ33C bbS3T31 BFQ33 bbS3T31 T-37-15 7Z89164 PDF

    BFQ33

    Abstract: SOT-100 BFQ33C IEC134 transistor bbs
    Text: AMER PHILIPS/DISCRETE 5SE D • 0017333 G ■ B F Q 3 3 C is recommended for new design BFQ33 ^ T - S l - i g N-P-N MICROWAVE TRANSISTOR The B F Q is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation featuring an extremely high transition frequency of 12 G H z and very low noise.


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    BFQ33C BFQ33 BFQ33 SOT-100 IEC134 transistor bbs PDF

    50BO

    Abstract: sje transistor
    Text: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter


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    i17TL I95t/R89) 50BO sje transistor PDF

    BFQ51C

    Abstract: marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173
    Text: N AMER PHILIPS/DISCRETE BSE D • ^53^31 GQ17Û73 1 ■ A BFQ51C T -3 I-I7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,


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    BFQ51C BFP90A. bb53T31 T-31-17 BFQ51C marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173 PDF

    Untitled

    Abstract: No abstract text available
    Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


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    DD14TS7 LTE21009R LTE21015R FO-41B) PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,


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    QQ17S73 BFQ51C BFP90A. htS3131 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2DI15OZ-12OO50A / < 7 - : Outline Drawings ;u POWER TRANSISTOR MODULE F e a tu re s • SffiME H ig h V oltage • 7 l) — ïfc-f y .1:[•' H-;. — K r tfltt • ASO In c lu d in g Free W h e e lin g D iode E xcellent Safe O p e ra tin g Area • ifâ J iïïi


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    2DI15OZ-12OO50A) l95t/R89 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure


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    bbS3T31 0D14T07 LAE4002S PDF

    BFR90A

    Abstract: BFR92A BFT92 A18 transistor
    Text: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;


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    bbS3T31 001fl0b3 BFR92A OT-23 BFT92 150mV; BFR90A BFR92A BFT92 A18 transistor PDF

    transistor b237

    Abstract: IJ9a B238 T151 T460 T760 T810 T930 transistor 1151 1DI5OF-1OOC50A
    Text: 1DI5OF-1OO 50a POWER TRANSISTO R MODULE • t t f t : F e a tu re s • Sfi§i/± High Voltage • K rt • ASO/^T av ,' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p li c a t io n s • Chopper Controls DC Motor Controls


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    1DI5OF-1OOC50A) B3Tg5S35^ l95t/R89 transistor b237 IJ9a B238 T151 T460 T760 T810 T930 transistor 1151 1DI5OF-1OOC50A PDF

    BA6807

    Abstract: Transistor 7f3
    Text: BA6807/ BA6807F/ BA6808FS BA6807/BA6807F ;3A6807F £ BA6808FS i. ' r„ -y ¿T - S, T" • i f Jfi'+iiE]/Dim ensions (Unit : mm ) (Different packages are available for BA6780F and BA6808FS.) BA6807/BA6807F/BA6808FSli, 12VSfflc7)7 T fc i ; , <£ i j i L t


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    BA6807/ BA6807F/ BA6808FS BA6807/BA6807F 3A6807F BA6780F BA6808FS. BA6807/BA6807F/BA6808FSli, 12VSfflc7 BA6807 Transistor 7f3 PDF

    SFH611-3

    Abstract: sfh-610-1 5186A SFH611-4 SFH 567 GE cny17 SFH640-2 SFH610-2 sfh617g-2 BRT13H
    Text: Optocouplers Packag* and Typ* Package Outlirt« Fsa turcs Part Number Currant Tran*far Ratio % lf«10 mA IL205 4 0 -80 IL206 63-125 {Voc)1 Withstand Taat 8 pin SO IC -8 DIP, single phototransislor SFH6106-3 SFH S106 4 pin DIP surface mount, phototransistor


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    IL205 IL206 SFH6106-3 SFH6156-1 BRT11H BRT12H BRT13H BRT11M BRT12M BRT13M SFH611-3 sfh-610-1 5186A SFH611-4 SFH 567 GE cny17 SFH640-2 SFH610-2 sfh617g-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSI 32H6230 ¿écotisystems' Servo Motor Driver A TDK Group/Company Preliminary Data December 1992 DESCRIPTION FEATURES The SSI 32H6230 Servo Motor Driver is a bipolar device intended for use in Winchester disk drive head positioning systems employing linear or rotary voice


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    32H6230 32H6230 32H6220 32H6210 1292-rev. PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF

    Untitled

    Abstract: No abstract text available
    Text: inte1 !P[ni [G U ST PR EW D ÊW 83C196EA CHMOS 16-BIT MICROCONTROLLER Automotive 32 MHz operation Optional clock doubler 2 Mbytes of linear address space 1 Kbyte of register RAM 3 Kbytes of code RAM 8 Kbytes of ROM Stack overflow/underflow monitor with user-defined upper and lower stack


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    83C196EA 16-BIT 160-pin PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    7 segmen

    Abstract: No abstract text available
    Text: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function HITACHI Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan function, displays alphanumerics, katakana, hiragana, and symbols. It can be configured to drive a dot­


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    HD66727 HD66727, HD66727 12-character 7 segmen PDF

    Relais ITT

    Abstract: DIODE 5TE elektronik DDR bauelemente DDR VEB M ik ro e le k tro n ik VEB Kombinat Transistoren DDR TRANSISTOR KATALOG translog Kombinat VEB A 281
    Text: KOMBINAT VEB ELEKTRO- APPARATE - WERKE BERLIN-TREPTOW O ursalog G Digitale Bausteine M odul 20 In h a ltsverzeich n is Seite Allgemeine Übersicht Konstruktiver und funktioneller Aufbau Systemparameter Zusammenschaltregeln Betriebsdaten ursamat Gefäßsystem


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    EEL52F Relais ITT DIODE 5TE elektronik DDR bauelemente DDR VEB M ik ro e le k tro n ik VEB Kombinat Transistoren DDR TRANSISTOR KATALOG translog Kombinat VEB A 281 PDF

    POWER TRANSFORMER E154515

    Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
    Text: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD


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    transistor c5578

    Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
    Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012


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    MCAT-2003 transistor c5578 BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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