bfr93
Abstract: DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17
Text: N AMER PHILIPS/DISCRETE S5E D • ^53^31 QGlfiG7S Q ■ BFR93 T -3I-I7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a SOT-23 plastic envelope. It is primarily intended fo r use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,
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BFR93
OT-23
BFT93.
T-31-17
bfr93
DBFR93
T-989
BFR91
BFT93
sot-23 marking jn
T-31-17
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BFR49
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D □ ^ £ 3 = 1 3 1 0017133 a • BFR49 BFF9UA is recommended for new design T -3 /-H N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in
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BFR49
bbS-3131
BFR49
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Transistor SJE 5331
Abstract: BFR49 sje 5331 transistor SJE 5331 IEC134
Text: A ME R PHILIPS/DISCRETE 2SE D • Lfci53cì31 O G l ? ^ & BFR49 BFR4 \^ _ BHH9UA is recommended for new design r-ti-ii N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in
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BHH90A
BFR49
T-3J-11
Transistor SJE 5331
BFR49
sje 5331 transistor
SJE 5331
IEC134
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.
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BFQ33C
bbS3T31
BFQ33
bbS3T31
T-37-15
7Z89164
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BFQ33
Abstract: SOT-100 BFQ33C IEC134 transistor bbs
Text: AMER PHILIPS/DISCRETE 5SE D • 0017333 G ■ B F Q 3 3 C is recommended for new design BFQ33 ^ T - S l - i g N-P-N MICROWAVE TRANSISTOR The B F Q is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation featuring an extremely high transition frequency of 12 G H z and very low noise.
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BFQ33C
BFQ33
BFQ33
SOT-100
IEC134
transistor bbs
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50BO
Abstract: sje transistor
Text: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter
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i17TL
I95t/R89)
50BO
sje transistor
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BFQ51C
Abstract: marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173
Text: N AMER PHILIPS/DISCRETE BSE D • ^53^31 GQ17Û73 1 ■ A BFQ51C T -3 I-I7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,
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BFQ51C
BFP90A.
bb53T31
T-31-17
BFQ51C
marking code ci
SOT173
BFP90A
SOT-173
MARKING 0 SOT173
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Untitled
Abstract: No abstract text available
Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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DD14TS7
LTE21009R
LTE21015R
FO-41B)
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Untitled
Abstract: No abstract text available
Text: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,
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QQ17S73
BFQ51C
BFP90A.
htS3131
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Untitled
Abstract: No abstract text available
Text: 2DI15OZ-12OO50A / < 7 - : Outline Drawings ;u POWER TRANSISTOR MODULE F e a tu re s • SffiME H ig h V oltage • 7 l) — ïfc-f y .1:[•' H-;. — K r tfltt • ASO In c lu d in g Free W h e e lin g D iode E xcellent Safe O p e ra tin g Area • ifâ J iïïi
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2DI15OZ-12OO50A)
l95t/R89
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure
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bbS3T31
0D14T07
LAE4002S
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BFR90A
Abstract: BFR92A BFT92 A18 transistor
Text: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;
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bbS3T31
001fl0b3
BFR92A
OT-23
BFT92
150mV;
BFR90A
BFR92A
BFT92
A18 transistor
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transistor b237
Abstract: IJ9a B238 T151 T460 T760 T810 T930 transistor 1151 1DI5OF-1OOC50A
Text: 1DI5OF-1OO 50a POWER TRANSISTO R MODULE • t t f t : F e a tu re s • Sfi§i/± High Voltage • K rt • ASO/^T av ,' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p li c a t io n s • Chopper Controls DC Motor Controls
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1DI5OF-1OOC50A)
B3Tg5S35^
l95t/R89
transistor b237
IJ9a
B238
T151
T460
T760
T810
T930
transistor 1151
1DI5OF-1OOC50A
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BA6807
Abstract: Transistor 7f3
Text: BA6807/ BA6807F/ BA6808FS BA6807/BA6807F ;3A6807F £ BA6808FS i. ' r„ -y ¿T - S, T" • i f Jfi'+iiE]/Dim ensions (Unit : mm ) (Different packages are available for BA6780F and BA6808FS.) BA6807/BA6807F/BA6808FSli, 12VSfflc7)7 T fc i ; , <£ i j i L t
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BA6807/
BA6807F/
BA6808FS
BA6807/BA6807F
3A6807F
BA6780F
BA6808FS.
BA6807/BA6807F/BA6808FSli,
12VSfflc7
BA6807
Transistor 7f3
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SFH611-3
Abstract: sfh-610-1 5186A SFH611-4 SFH 567 GE cny17 SFH640-2 SFH610-2 sfh617g-2 BRT13H
Text: Optocouplers Packag* and Typ* Package Outlirt« Fsa turcs Part Number Currant Tran*far Ratio % lf«10 mA IL205 4 0 -80 IL206 63-125 {Voc)1 Withstand Taat 8 pin SO IC -8 DIP, single phototransislor SFH6106-3 SFH S106 4 pin DIP surface mount, phototransistor
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IL205
IL206
SFH6106-3
SFH6156-1
BRT11H
BRT12H
BRT13H
BRT11M
BRT12M
BRT13M
SFH611-3
sfh-610-1
5186A
SFH611-4
SFH 567
GE cny17
SFH640-2
SFH610-2
sfh617g-2
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Untitled
Abstract: No abstract text available
Text: SSI 32H6230 ¿écotisystems' Servo Motor Driver A TDK Group/Company Preliminary Data December 1992 DESCRIPTION FEATURES The SSI 32H6230 Servo Motor Driver is a bipolar device intended for use in Winchester disk drive head positioning systems employing linear or rotary voice
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32H6230
32H6230
32H6220
32H6210
1292-rev.
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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Untitled
Abstract: No abstract text available
Text: inte1 !P[ni [G U ST PR EW D ÊW 83C196EA CHMOS 16-BIT MICROCONTROLLER Automotive 32 MHz operation Optional clock doubler 2 Mbytes of linear address space 1 Kbyte of register RAM 3 Kbytes of code RAM 8 Kbytes of ROM Stack overflow/underflow monitor with user-defined upper and lower stack
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83C196EA
16-BIT
160-pin
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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7 segmen
Abstract: No abstract text available
Text: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function HITACHI Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan function, displays alphanumerics, katakana, hiragana, and symbols. It can be configured to drive a dot
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HD66727
HD66727,
HD66727
12-character
7 segmen
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Relais ITT
Abstract: DIODE 5TE elektronik DDR bauelemente DDR VEB M ik ro e le k tro n ik VEB Kombinat Transistoren DDR TRANSISTOR KATALOG translog Kombinat VEB A 281
Text: KOMBINAT VEB ELEKTRO- APPARATE - WERKE BERLIN-TREPTOW O ursalog G Digitale Bausteine M odul 20 In h a ltsverzeich n is Seite Allgemeine Übersicht Konstruktiver und funktioneller Aufbau Systemparameter Zusammenschaltregeln Betriebsdaten ursamat Gefäßsystem
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EEL52F
Relais ITT
DIODE 5TE
elektronik DDR
bauelemente DDR
VEB M ik ro e le k tro n ik
VEB Kombinat
Transistoren DDR
TRANSISTOR KATALOG
translog
Kombinat VEB A 281
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POWER TRANSFORMER E154515
Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Text: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD
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transistor c5578
Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012
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MCAT-2003
transistor c5578
BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6
awm style 20233
7700A transformer
Belden 138777
awm 2464 vw-1 300v shield cable specification
transistor nec 8772
yokogawa DCS
finder type 81.11
C5611 Transistor
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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