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    Text: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,


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    PDF QQ17S73 BFQ51C BFP90A. htS3131

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    Abstract: No abstract text available
    Text: Thn% H EW LETT» mL'EM PA CKARD Schottky Barrier D iodes for M ixers and D etectors Technical Data 5082 2817/18 - Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity O utline 15 0.41 .016


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    PDF 5082-28XX 44475A4 QQ17S73