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    SIZ980DT Price and Stock

    Vishay Siliconix SIZ980DT-T1-GE3

    MOSFET 2N-CH 30V 20A 8PWRPAIR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIZ980DT-T1-GE3 Cut Tape 4,148 1
    • 1 $1.57
    • 10 $1.282
    • 100 $0.9969
    • 1000 $0.68832
    • 10000 $0.68832
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    SIZ980DT-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.58863
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    SIZ980DT-T1-GE3 Digi-Reel 1
    • 1 $1.57
    • 10 $1.282
    • 100 $0.9969
    • 1000 $0.68832
    • 10000 $0.68832
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    Vishay Intertechnologies SIZ980DT-T1-GE3

    DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY - Tape and Reel (Alt: SIZ980DT-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIZ980DT-T1-GE3 Reel 20 Weeks 3,000
    • 1 -
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    • 10000 $0.60722
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    Mouser Electronics SIZ980DT-T1-GE3 3,242
    • 1 $1.57
    • 10 $1.29
    • 100 $0.997
    • 1000 $0.689
    • 10000 $0.588
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    Newark SIZ980DT-T1-GE3 Cut Tape 1
    • 1 $1.65
    • 10 $1.48
    • 100 $1.16
    • 1000 $1.16
    • 10000 $1.16
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    SIZ980DT-T1-GE3 Reel 3,000
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    • 10000 $0.626
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    TTI SIZ980DT-T1-GE3 Reel 3,000
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    • 10000 $0.588
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    TME SIZ980DT-T1-GE3 3,000
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    • 10000 $0.93
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    EBV Elektronik SIZ980DT-T1-GE3 21 Weeks 3,000
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    SIZ980DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIZ980DT-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 30V 8-POWERPAIR Original PDF

    SIZ980DT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiZ980DT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiZ980DT AN609, 03-Sep-14

    Untitled

    Abstract: No abstract text available
    Text: SiZ980DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) (MAX.) • TrenchFET Gen IV power MOSFET ID (A) Qg (TYP.) 0.0067 at VGS = 10 V 20 a 0.0100 at VGS = 4.5 V


    Original     		PDF SiZ980DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12