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    SIS435DNT Search Results

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    SIS435DNT Price and Stock

    Vishay Siliconix SIS435DNT-T1-GE3

    MOSFET P-CH 20V 30A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS435DNT-T1-GE3 Cut Tape 5,747 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
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    SIS435DNT-T1-GE3 Digi-Reel 5,747 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
    • 10000 $0.3395
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    SIS435DNT-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SIS435DNT-T1-GE3 9,000 1
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    Vishay Intertechnologies SIS435DNT-T1-GE3

    Trans MOSFET P-CH -20V -22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS435DNT-T1-GE3)
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    Avnet Americas SIS435DNT-T1-GE3 Reel 21 Weeks 3,000
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    Mouser Electronics SIS435DNT-T1-GE3 2,577
    • 1 $0.59
    • 10 $0.59
    • 100 $0.424
    • 1000 $0.314
    • 10000 $0.286
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    Verical SIS435DNT-T1-GE3 2,677 23
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    • 1000 $0.2565
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    Arrow Electronics SIS435DNT-T1-GE3 Cut Strips 2,677 21 Weeks 1
    • 1 $0.3744
    • 10 $0.3594
    • 100 $0.3049
    • 1000 $0.2565
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    TTI SIS435DNT-T1-GE3 Reel 3,000
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    TME SIS435DNT-T1-GE3 1
    • 1 $0.762
    • 10 $0.533
    • 100 $0.424
    • 1000 $0.382
    • 10000 $0.382
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    EBV Elektronik SIS435DNT-T1-GE3 22 Weeks 3,000
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    SIS435DNT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS435DNT-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 30A 1212-8 Original PDF

    SIS435DNT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a


    Original     		PDF SiS435DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS435DNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS435DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12