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    Vishay Siliconix SIR644DP-T1-GE3

    MOSFET N-CH 40V 60A PPAK SO-8
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    DigiKey SIR644DP-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SIR644DP-T1-GE3

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    Bristol Electronics SIR644DP-T1-GE3 3,000
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    Quest Components SIR644DP-T1-GE3 2,400
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    SIR644DP-T1-GE3 2,400
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    SIR644DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR644DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A SO-8 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SiR644DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0027 at VGS = 10 V 60 0.0040 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 21.3 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification • DC/DC Converters


    Original     		PDF SiR644DP SiR644DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR644DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0027 at VGS = 10 V 60 0.0040 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 21.3 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification • DC/DC Converters


    Original     		PDF SiR644DP SiR644DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR644DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiR644DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs


    Original     		PDF O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs