Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SILICONIX SD21 Search Results

    SILICONIX SD21 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SD2164-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2161-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2163-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2162-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD2165-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-45F, / Visit Renesas Electronics Corporation
    2SD2162(0)-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation

    SILICONIX SD21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD5000

    Abstract: AN301 SD210 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE
    Text: AN301 Siliconix HighĆSpeed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of highĆspeed analog switches and switch arrays. It contains an


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 2N4959 MRF904 AN301 mosfet 2n7000 siliconix sd210 SD5400 SST211 2N7000 LH0063 SD210DE

    AN301

    Abstract: SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX
    Text: SD211DE/SST211 Series Siliconix NĆChannel Lateral DMOS FETs SD211DE SD213DE SD215DE Product Summary Part Number V BR DS Min (V) SST211 SST213 SST215 VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10


    Original     		PDF SD211DE/SST211 SD211DE SD213DE SD215DE SST211 SST213 SST215 AN301 SD211 SD211DE SD213DE SD214 SD215DE SST211 SST213 SST215 SST215 SILICONIX

    Untitled

    Abstract: No abstract text available
    Text: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2


    Original     		PDF SD210DE-2/214DE-2 SD210DE-2 SD214DE-2 08-Apr-05

    SD214DE

    Abstract: sd210de AN502 SD210DE-2 SD214DE-2 SD5000I-2
    Text: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2


    Original     		PDF SD210DE-2/214DE-2 SD210DE-2 SD214DE-2 S-02889--Rev. 21-Dec-00 SD214DE sd210de AN502 SD210DE-2 SD214DE-2 SD5000I-2

    SD210DE-2

    Abstract: SD210DE AN502 SD214DE-2 SD5000I-2
    Text: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2


    Original     		PDF SD210DE-2/214DE-2 SD210DE-2 SD214DE-2 18-Jul-08 SD210DE-2 SD210DE AN502 SD214DE-2 SD5000I-2

    J201 Replacement

    Abstract: "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C
    Text: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS


    Original     		PDF LS5911 LS5912 LS5912C 2N5911 2N5912 10kHz) 100MHz) 500mW OT-23 J201 Replacement "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C

    smt a1 transistor

    Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
    Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78


    Original     		PDF 500mW smt a1 transistor smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix

    low noise dual P-Channel JFET

    Abstract: 2n5019
    Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75Ω TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF 2N5018 -50mA 500mW low noise dual P-Channel JFET 2n5019

    SD211DE-2

    Abstract: AN502 SD213DE-2 SD214DE-2 SD215DE-2 sd211de
    Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2


    Original     		PDF SD211DE-2/213DE-2/215DE-2 SD211DE-2 SD213DE-2 SD215DE-2 S-02889--Rev. 21-Dec-00 SD211DE-2 AN502 SD213DE-2 SD214DE-2 SD215DE-2 sd211de

    sd215

    Abstract: SD215DE-2 SD215DE vishay
    Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2


    Original     		PDF SD211DE-2/213DE-2/215DE-2 SD211DE-2 SD213DE-2 SD215DE-2 08-Apr-05 sd215 SD215DE-2 SD215DE vishay

    VCR11N

    Abstract: fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511
    Text: VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω 1 ABSOLUTE MAXIMUM RATINGS TO-71 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF VCR11N VCR11N 300mW fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511

    TO72 package n-channel jfet

    Abstract: PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500
    Text: PAD SERIES PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE BVR ≥ -30V PAD1,2,5 PAD* Crss ≤ 2.0pF TO-72 BOTTOM VIEW TO-72 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1


    Original     		PDF 300mW 350mW OT-23 TO72 package n-channel jfet PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500

    SD215DE-2

    Abstract: AN502 SD211DE-2 SD213DE SD213DE-2 SD214DE-2 SD214DE
    Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2


    Original     		PDF SD211DE-2/213DE-2/215DE-2 SD211DE-2 SD213DE-2 SD215DE-2 18-Jul-08 SD215DE-2 AN502 SD211DE-2 SD213DE SD213DE-2 SD214DE-2 SD214DE

    low noise dual P-Channel JFET

    Abstract: transistor TO99 package 2N5116 LS312 equivalent 2N4416 equivalent p-channel dual P-Channel JFET 2n5114 sot23
    Text: 2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		PDF 2N5114 -50mA 500mW low noise dual P-Channel JFET transistor TO99 package 2N5116 LS312 equivalent 2N4416 equivalent p-channel dual P-Channel JFET 2n5114 sot23

    SD210 vishay

    Abstract: lateral mosfet audio amplifier SD210 datasheet vishay analog switch circuit using mosfet High-Speed Analog N-Channel DMOS FETs -TO-72 mosfet analog switch circuit AN207 CD74HC138 DG271 DG408
    Text: AN207 Vishay Siliconix 12-ns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies The DG611, DG612, and DG613 are extremely low-power, high-speed analog switches designed to optimize circuit performance in high-speed switching applications. Each of


    Original     		PDF AN207 12-ns DG611 DG611, DG612, DG613 DG61X DG611 DG612 SD210 vishay lateral mosfet audio amplifier SD210 datasheet vishay analog switch circuit using mosfet High-Speed Analog N-Channel DMOS FETs -TO-72 mosfet analog switch circuit AN207 CD74HC138 DG271 DG408

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent

    P-Channel MOSFET 12V SOT 23

    Abstract: LS-31 ultra FAST DMOS FET Switches jfet to 92
    Text: J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated J SERIES SST SERIES TO-92


    Original     		PDF J/SST111 360mW 350mW OT-23 P-Channel MOSFET 12V SOT 23 LS-31 ultra FAST DMOS FET Switches jfet to 92

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    sd5002 siliconix

    Abstract: No abstract text available
    Text: SILICONIX INC IflE D •3 T Siliconix X V • Ö5S473S 7 ■ SD5000 SERIES T '- s m i in c o rp o ra te d DGISbMQ N-Channel Lateral DMOS Quad FETs The Siliconix SD5000 Series is a monolithic array of single-pole, single-throw analog switches designed for high speed switching in audio, video ancl


    OCR Scan     		PDF 5S473S SD5000 SD5001 SD5002 sd5002 siliconix

    siliconix sd211 de

    Abstract: No abstract text available
    Text: jre s s ä SD211 de s e rie s N-Channel Lateral DMOS FETs The SD211DE Series of single-pole, single-throw analog switches is designed for high speed switching in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS


    OCR Scan     		PDF SD211 SD211DE SD215DE O-206AF) SD5000 siliconix sd211 de

    Untitled

    Abstract: No abstract text available
    Text: m SZS S DMCB SERIES DIE N-Channel Lateral DMOS FETs The D M CB Series of single-pole, single-throw analog SD210DE SD214DE video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low capacitance of


    OCR Scan     		PDF SD210DE SD214DE SD211DE SD215DE SST211 SST215

    SILICONIX SD21

    Abstract: TO-206A sd211de
    Text: B & ffA SD21 ODE SERIES N-Channel Lateral DMOS FETs The SD210DE Series of single-pole, single-throw analog switches is designed for high speed switchign in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low


    OCR Scan     		PDF SD210DE SD214DE O-206AF) SD5000 SO-14 20nnA SILICONIX SD21 TO-206A sd211de

    SD21

    Abstract: SILICONIX SD21 to72 sd21 SD214DE-2
    Text: SD21 ODE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V (BR)DS Min (V) VGS(,h) Max (V) rDSion) Max (Q) SD21 ODE-2 30 1.5 45 @ V q s = 10 V 0.5 2 SD214DE-2 20 1.5 45 @ V q S = 10 V


    OCR Scan     		PDF ODE-2/214DE-2 SD214DE-2 S-02889--Rev. 21-Dec-00 S-02B89--Rev. SD21 SILICONIX SD21 to72 sd21 SD214DE-2

    SD215DE-2

    Abstract: SD215DE vishay
    Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMM ARY Part Number V(BH)DS M in (V) v GS(th) Max (V) rDS(on) Max (Q ) Crss Max (pF) SD211DE-2 30 1.5 4 5 V GS= 1 0 V 0.5 2 SD213DE-2


    OCR Scan     		PDF SD211DE-2/213DE-2/215DE-2 SD211DE-2 SD213DE-2 SD215DE-2 S-02889--Rev. 21-Dec-00 SD215DE-2 SD215DE vishay