leadframe materials
Abstract: AN807 sot23 footprint AN-807 siliconix an807
Text: AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices.
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AN807
OT-23
07-Apr-99
leadframe materials
AN807
sot23 footprint
AN-807
siliconix an807
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leadframe materials
Abstract: AN807 AN-807 siliconix an807
Text: AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices.
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AN807
OT-23
leadframe materials
AN807
AN-807
siliconix an807
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sq2308
Abstract: No abstract text available
Text: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)
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SQ2308BES
O-236
OT-23)
AEC-Q101
2002/95/EC
OT-23
SQ2308BES-T1-GE3
2011/65/EU
2002/95/EC.
sq2308
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sq2360ees-t1-ge3
Abstract: No abstract text available
Text: SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2360EES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2360EES
OT-23
SQ2360EES-T1-GE3
2011/65/EU
2002/95/EC.
sq2360ees-t1-ge3
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SQ2328
Abstract: No abstract text available
Text: SQ2328ES Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc
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SQ2328ES
O-236
OT-23)
2002/95/EC
AEC-Q101
OT-23
SQ2328ES-T1-GE3
11-Mar-11
SQ2328
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SI2369DS
Abstract: No abstract text available
Text: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a
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Si2369DS
O-236
OT-23)
Si2369DS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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SQ2315ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2315ES
OT-23
SQ2315ES-T1-GE3
2011/65/EU
2002/95/EC.
|
SQ2315ES
Abstract: No abstract text available
Text: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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PDF
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SQ2315ES
AEC-Q101
2002/95/EC
O-236
OT-23)
OT-23
SQ2315ES-T1-GE3
2002/95/EC.
2002/95/EC
SQ2315ES
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Untitled
Abstract: No abstract text available
Text: SQ2308ES Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc
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PDF
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SQ2308ES
2002/95/EC
AEC-Q101
O-236
OT-23)
OT-23
SQ2308ES-T1-GE3
2002/95/EC.
2002/95/EC
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tjm sot23
Abstract: No abstract text available
Text: SQ2318ES Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • Compliant to RoHS Directive 2002/95/EC
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PDF
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SQ2318ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2318ES*
OT-23
SQ2318ES-T1-GE3
11-Mar-11
tjm sot23
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Untitled
Abstract: No abstract text available
Text: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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PDF
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SQ2315ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2315ES
OT-23
SQ2315ES-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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PDF
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SQ2360EES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2360EES
OT-23
SQ2360EES-T1-GE3
11-Mar-11
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SQ2318ES
Abstract: No abstract text available
Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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PDF
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SQ2318ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2318ES*
OT-23
SQ2318ES-T1-GE3
2011/65/EU
2002/95/EC.
SQ2318ES
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Untitled
Abstract: No abstract text available
Text: SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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PDF
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SQ2360EES
AEC-Q101
2002/95/EC
O-236
OT-23)
OT-23
SQ2360EES-T1-GE3
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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PDF
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SQ2318ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2318ES*
OT-23
SQ2318ES-T1-GE3
11-Mar-11
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SQ2325ES
Abstract: No abstract text available
Text: New Product SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg Tested
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Original
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PDF
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SQ2325ES
O-236
OT-23)
AEC-Q101
2011/65/EU
SQ2325ES
OT-23
SQ2325ES-T1-GE3
2011/65/EU
2002/95/EC.
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sq2361
Abstract: No abstract text available
Text: SQ2361EES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection: 800 V • AEC-Q101 Qualifiedc
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Original
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PDF
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SQ2361EES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2361EES
OT-23
SQ2361EES-T1-GE3
2011/65/EU
2002/95/EC.
sq2361
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SQ2360EES
Abstract: SQ2360EES-T1-GE3
Text: SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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PDF
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SQ2360EES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2360EES
OT-23
SQ2360EES-T1-GE3
2002/95/EC.
2002/95/EC
SQ2360EES-T1-GE3
|
Untitled
Abstract: No abstract text available
Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:
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SQ2351ES
AEC-Q101
O-236
OT-23)
OT-23
SQ2351ES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices
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Si2307CDS
O-236
OT-23)
Si2307CDS-T1-E3
Si2307CDS-T1-GE3
30electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • Compliant to RoHS Directive 2002/95/EC
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Original
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PDF
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SQ2315ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2315ES
OT-23
SQ2315ES-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SQ2303ES Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc
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Original
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SQ2303ES
O-236
OT-23)
2002/95/EC
AEC-Q101
SQ2303ES*
OT-23
SQ2303ES-T1-GE3
11-Mar-11
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SQ2351ES
Abstract: No abstract text available
Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:
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SQ2351ES
O-236
OT-23)
AEC-Q101
SQ2351ES
OT-23
SQ2351ES-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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Si2315BDS-T1-E3
Abstract: No abstract text available
Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*
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Si2315BDS
O-236
OT-23)
Si2315BDS-T1
Si2315BDS-T1-E3
Si2315BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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