2n7000 complement
Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put
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Original
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AN804
VP0300L
O226AA
VN0300L
TP0610L
2N7000
VP2020L
2n7000 complement
VP0300L
mosfet discrete totem pole drive CIRCUIT
2n7000+complement
2n7000 equivalent
AN804
Si9939DY
Si9942DY
Si9958DY
TP0610
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PDF
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70611
Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a
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Original
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AN804
retur5600
VP0300L
O-226AA
VN0300L
TP0610L
2N7000
70611
FET pair n-channel p-channel
mosfet discrete totem pole drive CIRCUIT
2n7000+complement
2n7000 complement
logic level complementary MOSFET
mosfet discrete totem pole CIRCUIT
Logic Level p-Channel Power MOSFET
AN804
Si9942DY
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PDF
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AN804
Abstract: TP0202T
Text: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features
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Original
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TP0202T
AN804.
44505--Rev
AN804
TP0202T
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PDF
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BS250
Abstract: TP0610L VP0610T AN804 TP0610T VP0610L
Text: TP0610L/T, VP0610L/T, BS250 Siliconix PĆChannel EnhancementĆMode MOS Transistors TP0610L TP0610T Product Summary VP0610L VP0610L BS250 Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T VP0610L
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Original
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TP0610L/T,
VP0610L/T,
BS250
TP0610L
TP0610T
VP0610L
BS250
TP0610L
VP0610T
AN804
TP0610T
VP0610L
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PDF
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mosfet bs250
Abstract: BS250 VP0610T BS250 datasheet equivalent of BS250 part marking for tp0610t 0610L AN804 TP0610L TP0610T
Text: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4
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Original
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TP0610L/T,
VP0610L/T,
BS250
TP0610L
TP0610T
VP0610L
VP0610T
O-226AA
mosfet bs250
BS250
VP0610T
BS250 datasheet
equivalent of BS250
part marking for tp0610t
0610L
AN804
TP0610L
TP0610T
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PDF
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mosfet bs250
Abstract: BS250 VP0610T 0610L AN804 TP0610L TP0610T VP0610L BS250 mosfet
Text: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4
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Original
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TP0610L/T,
VP0610L/T,
BS250
TP0610L
TP0610T
VP0610L
VP0610T
O-226AA
mosfet bs250
BS250
VP0610T
0610L
AN804
TP0610L
TP0610T
VP0610L
BS250 mosfet
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PDF
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mosfet bs250
Abstract: BS250 0610L TP0610L VP0610T BS250 mosfet equivalent of BS250 AN804 TP0610T VP0610L
Text: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4
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Original
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TP0610L/T,
VP0610L/T,
BS250
TP0610L
TP0610T
VP0610L
VP0610T
S-04623--Rev.
03-Sep-01
mosfet bs250
BS250
0610L
TP0610L
VP0610T
BS250 mosfet
equivalent of BS250
AN804
TP0610T
VP0610L
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PDF
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BS250
Abstract: mosfet bs250 VP0610T BS250 mosfet bs250 siliconix 0610L AN804 TP0610L TP0610T VP0610L
Text: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4
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Original
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TP0610L/T,
VP0610L/T,
BS250
TP0610L
TP0610T
VP0610L
VP0610T
O-226AA
BS250
mosfet bs250
VP0610T
BS250 mosfet
bs250 siliconix
0610L
AN804
TP0610L
TP0610T
VP0610L
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PDF
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75576
Abstract: AN804 VP0300B VP0300L VP0300M VQ2001J VQ2001P
Text: VP0300B/L/M, VQ2001J/P Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = -12 V -2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -12 V -2 to -4.5 -0.32 2.5 @ VGS = -12 V
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Original
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VP0300B/L/M,
VQ2001J/P
VP0300B
VP0300L
VQ2001J
VQ2001P
VP0300M
AN804
VP0300B
O226AA,
75576
AN804
VP0300L
VP0300M
VQ2001J
VQ2001P
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PDF
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VP0300L
Abstract: VP0300LS AN804 VQ2001J VQ2001P 0300l
Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V
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Original
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VP0300L/LS,
VQ2001J/P
VP0300L
VP0300LS
VQ2001J
VQ2001P
O-226AA,
VP0300L
0300L
VP0300LS
AN804
VQ2001J
VQ2001P
0300l
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PDF
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AN804
Abstract: VP0300L VP0300LS VQ2001J VQ2001P 1g1s
Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V
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Original
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VP0300L/LS,
VQ2001J/P
VP0300L
VP0300LS
VQ2001J
VQ2001P
08-Apr-05
AN804
VP0300L
VP0300LS
VQ2001J
VQ2001P
1g1s
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PDF
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AN804
Abstract: TP0202T
Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D
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Original
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TP0202T
O-200
S-04279--Rev.
16-Jul-01
AN804
TP0202T
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PDF
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AN804
Abstract: TP0202T marking code vishay SILICONIX vishay siliconix code marking
Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D
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Original
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TP0202T
18-Jul-08
AN804
TP0202T
marking code vishay SILICONIX
vishay siliconix code marking
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PDF
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TP0202T
Abstract: AN804
Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D
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Original
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TP0202T
08-Apr-05
TP0202T
AN804
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PDF
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|
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AN804
Abstract: TP0202T
Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 For applications information see AN804.
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Original
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TP0202T
AN804.
S-44505--Rev.
06-Sep-94
AN804
TP0202T
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PDF
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FET pair n-channel p-channel
Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.
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Original
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AN804
10-Mar-97
VP0300L
O-226AA
VN0300L
TP0610L
2N7000
FET pair n-channel p-channel
VN0300L equivalent
FET P-Channel Switch
2N7000 MOSFET
mosfet discrete totem pole CIRCUIT
logic level complementary MOSFET
Siliconix "fet"
2n7000 complement
mosfet discrete totem pole drive CIRCUIT
VP2020L
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PDF
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FET pair n-channel p-channel
Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to
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Original
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AN804
21-Jun-94
VP0300L
O-226AA
VN0300L
TP0610L
2N7000
FET pair n-channel p-channel
FET P-Channel Switch
logic level complementary MOSFET switch
2n7000 complement
logic level complementary MOSFET
mosfet discrete totem pole drive CIRCUIT
Power MOSFET p-Channel n-channel dual
mosfet power P-Channel N-Channel CIRCUIT
TP0610 series
VN0300L equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: AND8044/D Single-Channel 1206A ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE INTRODUCTION New ON Semiconductor ChipFETs in the leadless 1206A package feature the same outline as popular 1206A resistors and capacitors but provide all the performance of
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Original
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AND8044/D
r14525
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic TP0202T Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V br dss M in (V) fD S(on) -2 0 M ax (Q) V GS(lh) In (A) (V) 1.4 @ VGS = -1 0 V -1 .3 to - 3 V -0.31 3.5 @ VGS = -4 .5 V -1 .3 to - 3 V -0.16 For applications information see AN804, page 12-43.
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OCR Scan
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TP0202T
AN804,
-44505--Rev
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PDF
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VP0610T
Abstract: 0610L BS250 TP0610T
Text: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4
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OCR Scan
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TP0610
VP061OL/T,
BS250
TP0610L
TP0610T
VP0610L
VP0610T
BS250
S-04623--
03-Sep-01
0610L
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PDF
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0300L
Abstract: 70217 marking code Sk transistors
Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) VP0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 VP0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V
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OCR Scan
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VP0300L/LS,
VQ2001J/P
VP0300L
VP0300LS
VQ2001J
VQ2001P
-226A
16-Jul-01
VP0300LVLS,
0300L
70217
marking code Sk transistors
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PDF
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TP0202
Abstract: No abstract text available
Text: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M în (V) V G S 0 h )(V ) b (A) V -1 .3 t o - 3 V -0.41 3.5 @ V g s = - 4-5 V -1 .3 to - 3 V -0 .2 7 r D S (o n ) 1.4 -2 0 Max (Q) @ Vq s =-1 0 FEATURES BENEFITS APPLICATIONS •
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OCR Scan
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TP0202T
O-236
OT-23)
S-04279--
16-Jul-01
TP0202
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PDF
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VP0300M
Abstract: 150EC VP0300L
Text: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V
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OCR Scan
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VP0300B/L/M,
VQ2001J/P
VP0300B
VP0300L
VP0300M
VQ2001J
VQ2001P
AN804,
P-38283--Rev.
150EC
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PDF
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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OCR Scan
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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PDF
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