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    SILICON ON INSULATOR Search Results

    SILICON ON INSULATOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet
    CO-058RABNCX2-002 Amphenol Cables on Demand Amphenol CO-058RABNCX2-002 BNC Right Angle Male to BNC Right Angle Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet

    SILICON ON INSULATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Inselek

    Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
    Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.


    Original     		PDF

    stiffness diaphragm pressure sensor

    Abstract: diaphragm TP301 tunnel sensor Force Transducer sensitivity resolution
    Text: Miniature silicon-on-insulator pressure transducer for absolute pressure measurement at 260˚C TP 301 Model 8540 miniature pressure transducer for absolute pressure measurement at 260˚C Abstract A miniature, silicon-on-insulator absolute pressure The present paper will describe a pressure transducer


    Original     		PDF TP301 stiffness diaphragm pressure sensor diaphragm TP301 tunnel sensor Force Transducer sensitivity resolution

    MPC7448

    Abstract: MPC7447 MPC7448 MPC7447 MPC7447A sfx2
    Text: High-Performance Processors MPC7448 Host Processor Built on Power Architecture Technology The MPC7448 is the first discrete MPC7448 Block Diagram high-performance processor, built on Power Architecture™ technology, manufactured on 90 nanometer silicon-on-insulator SOI


    Original     		PDF MPC7448 MPC7448 MPC7448FS MPC7447 MPC7448 MPC7447 MPC7447A sfx2

    BP050-0024UJ03

    Abstract: F923 PE4309 acg-6
    Text: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


    Original     		PDF PE4309 PE4309 BP050-0024UJ03 F923 acg-6

    PE4309

    Abstract: BP050-0024UJ03
    Text: Preliminary Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


    Original     		PDF PE4309 PE4309 BP050-0024UJ03

    BP050-0024UJ03

    Abstract: 20 pins qfn 4x4 footprint
    Text: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


    Original     		PDF PE4309 PE4309 BP050-0024UJ03 20 pins qfn 4x4 footprint

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4309 50 RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


    Original     		PDF PE4309 PE4309

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


    Original     		PDF PE4309 PE4309

    SAE J2411

    Abstract: rain sensor BOSCH for car application steering controlled headlight report ecu Bosch ICs car ecu microprocessors 24 v temic ecu list of sensors used in bmw car BOSCH ECU microcontroller microprocessors used in car ecus siemens ecu VDO
    Text: Semiconductors Philips - the vital link in the interconnected car Semiconductors Advancing silicon for automotive processes Connecting flexible intelligence in the car Philips’ SOI Silicon-on-Insulator technology is the Meeting the comfort, convenience, safety and security demands of


    Original     		PDF

    MPC7448

    Abstract: MPC7447 MPC7448 MPC7447 MPC7447A
    Text: High-Performance Processors MPC7448 PowerPC Processor The MPC7448 is the first discrete high- MPC7448 POWERPC® PROCESSOR BLOCK DIAGRAM ® performance PowerPC processor manufactured on 90 nanometer silicon-on-insulator SOI Completion Instruction Fetch


    Original     		PDF MPC7448 MPC7448 MPC7448POWPCFS MPC7447 MPC7448 MPC7447 MPC7447A

    bsim3

    Abstract: IMD2 transistor metal oxide in capacitor "X-Fab" Core cell library transistor ag metal sheet thickness sensor 45 nm library breakdown gate oxide
    Text: 1.0 µm SOI Process 1.0 µm Silicon-On-Insulator Technology 1.0 µm Non-fully Depleted SOI Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal multi voltage systems 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE42650A SP3T High Power UltraCMOS RF Switch 30 MHz - 1000 MHz Product Description ig de s The PE42650A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


    Original     		PDF PE42650A PE42650A 32-lead

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4305 50 Ω RF Digital Attenuator 5-bit, 15.5 dB, DC – 4.0 GHz Product Description de s ig The PE4305 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance


    Original     		PDF PE4305 PE4305

    HXSRD01

    Abstract: 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor
    Text: HXSRD01 Trivor SERDES Quad Redundant Transceiver Radiation Hardened Features • Fabricated on S150 Silicon On Insulator SOI CMOS ■ ■ 150 nm Process (Leff = 110 nm) 4 Channel (Quad) Transceiver with Redundant Transmitters ■ Channel Data Rates to 3.1875Gb/s


    Original     		PDF HXSRD01 1875Gb/s 10Gb/s 1X106 1x10-12 2x10-12 1x1014 1x1010 1x1012 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor

    Untitled

    Abstract: No abstract text available
    Text: CPC7220 Low Charge Injection, 8-Channel High Voltage Analog Switch INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon On Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • DC to 10MHz Analog Signal Frequency


    Original     		PDF 10MHz -60dB CPC7220 DS-CPC7220-R01

    Untitled

    Abstract: No abstract text available
    Text: CPC7232 8-Channel HV Analog Switch with Built-in Bleeder Resistors INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon on Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • Internal Output Bleeder Resistors


    Original     		PDF 10MHz -60dB CPC7232 DS-DS-CPC7232-R01

    CPC7220

    Abstract: CPC7220W CPC7221
    Text: CPC7220/CPC7221 Low Charge Injection 8-Channel High Voltage Analog Switch Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)


    Original     		PDF CPC7220/CPC7221 10MHz CPC7220 CPC7221, DS-CPC7220/CPC7221-R00B CPC7220W CPC7221

    K0220

    Abstract: b0930 lqfp48 land pattern K1160 CPC7232
    Text: CPC7232 8-Channel HV Analog Switch with Built-in Bleeder Resistors INTEGRATED CIRCUITS DIVISION PRELIMINARY Features Description • Processed with BCDMOS on SOI Silicon on Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • Internal Output Bleeder Resistors


    Original     		PDF CPC7232 CPC7232 DS-DS-CPC7232-R00J K0220 b0930 lqfp48 land pattern K1160

    CPC7220

    Abstract: CPC7220W
    Text: CPC7220 Low Charge Injection 8-Channel High Voltage Analog Switch Features Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)


    Original     		PDF CPC7220 10MHz CPC7220 DS-CPC7220-R00E CPC7220W

    Untitled

    Abstract: No abstract text available
    Text: CPC7601 Low Charge Injection, 16-Channel High Voltage Analog Switch INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon On Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • DC to 10MHz Analog Signal Frequency


    Original     		PDF 10MHz 16-Channel CPC7601 DS-CPC7601-R02

    silicon on insulator

    Abstract: No abstract text available
    Text: CPC7220 Low Charge Injection 8-Channel High Voltage Analog Switch Features Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)


    Original     		PDF CPC7220 10MHz CPC7220 DS-CPC7220-R00H silicon on insulator

    Untitled

    Abstract: No abstract text available
    Text: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features ▪ Fabricated on Silicon On Insulator SOI CMOS Technology ▪ SOI4 Process (Leff = 0.8 um) ▪ Total Dose Hardness 300k rad (Si) ▪ Dose Rate Upset Hardness 1x109 rad(Si)/s ▪ Dose Rate Survivability


    Original     		PDF HMXMUX01 1x109 1x1012 1x1014 120ns HMXMUX01 ADS-14199

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF HX6356 1x106rad 1x101

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x106 1x101 1x109 0GD1755