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    SILICON JUNCTION FETS Search Results

    SILICON JUNCTION FETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LF157H Rochester Electronics LLC LF157 - JFET Input Operational Amplifier Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    FLA2N04BP Amphenol Communications Solutions FLA Panel Gasket NEMA ANSI C136.41, Silicone Rubber, Black Visit Amphenol Communications Solutions
    FLA014130R1 Amphenol Communications Solutions FLA Receptacle NEMA ANSI C136.41, 3 Power, No Signal, 14AWG, 105C, with Panel Gasket Silicone Rubber Visit Amphenol Communications Solutions
    FLA214230R1 Amphenol Communications Solutions FLA Receptacle NEMA ANSI C136.41, 3 Power, 2 Signal, 14AWG, 150C, with Panel Gasket Silicone Rubber Visit Amphenol Communications Solutions

    SILICON JUNCTION FETS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK1842

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Drain current Gate current Power dissipation Junction temperature


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    2SK1842 2SK1842 PDF

    J108

    Abstract: J109 J110 Silicon Junction FETs J109 7
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs


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    CRS15

    Abstract: J110 J108 J109 Silicon Junction FETs transistor j109 equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs


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    Infrared-Sensor

    Abstract: latest Infrared-Sensor 2SK2380 SC-89
    Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.80) (0.80) Drain current Gate current Allowable power dissipation Channel temperature


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    2SK2380 Infrared-Sensor latest Infrared-Sensor 2SK2380 SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel silicon junction field-effect transistor FEATURES BF545A; BF545B; BF545C QUICK REFERENCE DATA MIN. MAX. UNIT “ 30 V BF545A 2 6.5 mA DESCRIPTION BF545B N-channel symmetrical silicon junction FETs in a


    OCR Scan
    BF545A; BF545B; BF545C BF545A BF545B BF545A) PDF

    2sk3585

    Abstract: GV2 LE diode code GW 17 GV2 LE AND GV2 L
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  High mutual conductance gm


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    2002/95/EC) 2SK3585G 2sk3585 GV2 LE diode code GW 17 GV2 LE AND GV2 L PDF

    2SK3372G

    Abstract: GV2 LE AND GV2 L
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package • High mutual conductance gm


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    2002/95/EC) 2SK3372G 2SK3372G GV2 LE AND GV2 L PDF

    pyroelectric sensor application notes

    Abstract: Junction-FET pyro pyroelectric sensor 2SK2988 "Field Effect Transistor" JISC7030 SC-75
    Text: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Drain current Gate current Allowable power dissipation Channel temperature Storage temperature


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    2SK2988 SC-75 pyroelectric sensor application notes Junction-FET pyro pyroelectric sensor 2SK2988 "Field Effect Transistor" JISC7030 SC-75 PDF

    2SK3426G

    Abstract: GV2 LE AND GV2 L
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package • High mutual conductance gm


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    2002/95/EC) 2SK3426G 2SK3426G GV2 LE AND GV2 L PDF

    2SK3585

    Abstract: 2SK358
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  High mutual conductance gm


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    2002/95/EC) 2SK3585G 2SK3585 2SK358 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction For impedance conversion in low frequency For pyro-electric sensor 2 . 8 - 0.3 + 0.25 1 . 5 - 0.05 0.65±0.15 • Features Parameter Gate-Drain voltage Drain current Gate current


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    2SK2751 O-236 SC-59 C7030, PDF

    SJF00005BED

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05


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    2SK0123 2SK123) SJF00005BED PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1


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    2002/95/EC) 2SK0663 2SK663) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1


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    2002/95/EC) 2SK3372 PDF

    2SK1104

    Abstract: 2SJ164 SC-72
    Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


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    2SK1104 2SJ164 SC-72 2SK1104 2SJ164 SC-72 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK198 Silicon Junction FETs Small Signal 2SK198 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 1.45 Downsizing of sets by mini-type package and automatic insertion by 1 taping/magazine packing are available. 3


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    2SK198 PDF

    2sk3585

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  High mutual conductance gm


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    2002/95/EC) 2SK3585G 2sk3585 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Unit −40 V Gate-source voltage (Drain open) VGSO


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    2SK1842 PDF

    2SK3862

    Abstract: diode code GW 17
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3862 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


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    2002/95/EC) 2SK3862 2SK3862 diode code GW 17 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance • Low-noise characteristics • Code


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    2002/95/EC) 2SK1103 2SJ0163 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


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    2002/95/EC) 2SK3948G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


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    2002/95/EC) 2SK4206 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm


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    2002/95/EC) 2SK3372G PDF

    Junction-FET

    Abstract: 2SJ164 2SK1104 SC-72
    Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


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    2SJ164 2SK1104 SC-72 Junction-FET 2SJ164 2SK1104 SC-72 PDF