WBFBP-02C
Abstract: transistor marking code 325 Schottky schottky barrier rectifiers
Text: SCS521DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type
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SCS521DS
WBFBP02C
01-June-2008
WBFBP-02C
transistor marking code 325
Schottky
schottky barrier rectifiers
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SCS520
Abstract: Schottky Barrier Rectifiers low current SCHOTTKY BARRIER RECTIFIERS
Text: SCS520DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type
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SCS520DS
11-Nov-2009
SCS520
Schottky Barrier Rectifiers
low current SCHOTTKY BARRIER RECTIFIERS
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Untitled
Abstract: No abstract text available
Text: SCS521DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type
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SCS521DS
05REF
11-Nov-2009
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SCS70DSTN
Abstract: No abstract text available
Text: SCS70DSTN 0.07 A, 70 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring
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SCS70DSTN
WBFBP-02C
22-Nov-2013
SCS70DSTN
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SCS40STN
Abstract: No abstract text available
Text: SCS40STN 0.12 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring
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SCS40STN
WBFBP-02C
13-Dec-2013
SCS40STN
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Untitled
Abstract: No abstract text available
Text: 2SB108100MA 2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB108100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB108100MA
2SB108100MA
002mA@
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Untitled
Abstract: No abstract text available
Text: 2SB229100MA 2SB229100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB229100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB229100MA
2SB229100MA
002mA@
2290mm;
2195mm;
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Untitled
Abstract: No abstract text available
Text: 2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB139100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB139100MA
2SB139100MA
002mA@
390mm;
295mm;
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Untitled
Abstract: No abstract text available
Text: 2SB267100MA 2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB267100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB267100MA
2SB267100MA
002mA
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Untitled
Abstract: No abstract text available
Text: 2SB183060MA 2SB183060MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB183060MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB183060MA
2SB183060MA
002mA@
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Untitled
Abstract: No abstract text available
Text: 2SB166100MA 2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB166100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB166100MA
2SB166100MA
002mA@
1660mm;
1565mm;
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Untitled
Abstract: No abstract text available
Text: 2SB154100MA 2SB154100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB154100MA is a schottky barrier diode chips Ø Lb fabricated in silicon epitaxial planar technology; La Ø Due to special schottky barrier structure, the chips have very low reverse leakage current typical
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2SB154100MA
2SB154100MA
002mA@
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Untitled
Abstract: No abstract text available
Text: 2SB183100MA 2SB183100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB183100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB183100MA
2SB183100MA
002mA@
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top metal
Abstract: silan
Text: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB035040AML
2SB035040AML
2SB035040AMLJY-155
2SB035040AMLJL-155
500dice/wafer
top metal
silan
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Untitled
Abstract: No abstract text available
Text: 2SB075060ML 2SB075060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB075060ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;
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2SB075060ML
2SB075060ML
2SB075060MLYY
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Untitled
Abstract: No abstract text available
Text: 2SB035100ML 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB035100ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;
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2SB035100ML
2SB035100ML
2SB035100MLJY
250mA
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Untitled
Abstract: No abstract text available
Text: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection;
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2SB075030MLJL
2SB075030MLJL
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Untitled
Abstract: No abstract text available
Text: 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;
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2SB030070MLJY
2SB030070MLJY
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Untitled
Abstract: No abstract text available
Text: 2SB083040ML 2SB083040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB083040ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;
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2SB083040ML
2SB083040ML
2SB083040MLYY
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Untitled
Abstract: No abstract text available
Text: 2SB035040ML 2SB035040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB035040ML
2SB035040ML
2SB035040MLJY
2SB035040MLJY-155
2SB035040MLJL
2SB035040MLJL-155
500dice/wafer
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Untitled
Abstract: No abstract text available
Text: 2SB065030ML 2SB065030ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065030ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB065030ML
2SB065030ML
2SB065030MLYY-210
2SB065030MLJY-180
2SB065030MLJY-155
2SB065030MLJL-180
2SB065030MLJL-155
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Abstract: No abstract text available
Text: 2SB053020MTJY 2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB053020MTJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;
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2SB053020MTJY
2SB053020MTJY
150uA
100mA
500mA
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ZC2800
Abstract: E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E
Text: SCH OTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.
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OT-23
ZC2800
ZC2810
10fiA
ZC2811
ZC5800
E7* sot-23
MARKING 7A sot-23
ZC2800E
ZC2810
ZC2810E
ZC2811
ZC2811E
ZC5800
ZC5800E
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Diode Marking z3 SOT-23
Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
Text: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.
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OT-23
to-92
sot-23
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
BZX84-C3V6
BZX84-C3V9
ZC830
Diode Marking z3 SOT-23
schottky diode marking A7
Y1 SOT-23
marking code X5 SOT23
SOT-23 MARKING w5
X2 marking code sot 23
MARKING X4 SOT23
marking C20 sot-23
sot marking code w7
Z4 SOT23
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