Untitled
Abstract: No abstract text available
Text: 2SB229100MA 2SB229100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB229100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB229100MA
2SB229100MA
002mA@
2290mm;
2195mm;
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IR0002
Abstract: No abstract text available
Text: 2SB229100MA 2SB229100MA La 2SB229100MA Lb Ø IR Ø Vr=100V IR=0.002mA@ 150°C Ø Ø Ø ESD Ø La 2290µm Lb 2195µm Ø Ø 2290µm X 2290µm Ø 280±20µm 2SB229100MAYY Ø 2SB229100MAYL @8.3ms VRRM 100 V IFAV 10 A IFSM 150 A TJ 150 °C TSTG -40~150 °C
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2SB229100MA
002mA@
2SB229100MAYY
2SB229100MAYL
IR0002
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Untitled
Abstract: No abstract text available
Text: 2SB229100MA 2SB229100MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB229100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø
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2SB229100MA
2SB229100MA
2SB229100MAYY
2SB229100MAYL
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