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    SILICON CONTROLLED RECTIFIED Search Results

    SILICON CONTROLLED RECTIFIED Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    FSASF214E2 Amphenol Communications Solutions Mini SAS, High Speed Input Output Connector, 1X2 CAGE ASSY 0 DEG NO SCR Visit Amphenol Communications Solutions
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SILICON CONTROLLED RECTIFIED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE517

    Abstract: HIGH VOLTAGE Rectifier for microwave ovens silicon controlled rectified
    Text: NTE517 Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven Features: D Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power D Low Forward Voltage Drop D Typical IR less than 0.1A D High Overload Surge Capacity


    Original     		PDF NTE517 5000V 0500V 18C/W 10sec) NTE517 HIGH VOLTAGE Rectifier for microwave ovens silicon controlled rectified

    CI 4026

    Abstract: 1N4150 1N4150-1 4031-A diode 1n4150
    Text: Silicon Switching Diode 1N4150 DO-35 Glass Package 11NNor1 or 1N4150-1 1N Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded


    Original     		PDF 1N4150 DO-35 11NNor1 1N4150-1 LL-34/35 Mil-S-19500/231 031-A CI 4026 1N4150 1N4150-1 4031-A diode 1n4150

    SCR gate drive circuit

    Abstract: NXL0840
    Text: NXL0840 SCR logic level Rev. 01 — 26 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier SCR in a SOT54 plastic package 1.2 Features • Direct interfacing to logic level ICs


    Original     		PDF NXL0840 sym037 NXL0840 771-NXL0840 SCR gate drive circuit

    NXL0840

    Abstract: SC-43A
    Text: NXL0840 SCR logic level Rev. 01 — 26 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier SCR in a SOT54 plastic package 1.2 Features • Direct interfacing to logic level ICs


    Original     		PDF NXL0840 NXL0840 SC-43A

    DO-213AA

    Abstract: LL4150 LL4150-1
    Text: MINI-MELF-SMD Applications LL4150 or LL4150-1 Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per


    Original     		PDF LL4150 LL4150-1 MIL-S-19500/ LL-34/35 DO-213AA DO-35 031-A DO-213AA LL4150 LL4150-1

    1N4148 SMD LL-34

    Abstract: diode with PIV 80 1N4148 JANTXV 1N4148 1N4148-1 1N4150 1n4148 melf package 1n4148 smd diode smd 1n4148
    Text: Silicon Switching Diode Applications 1N4148 1N4150 or 1N4148-1 DO-35 Glass Package Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22"


    Original     		PDF 1N4148 1N4150 1N4148-1 DO-35 LL-34/35 031-A 1N4148 SMD LL-34 diode with PIV 80 1N4148 JANTXV 1N4148 1N4148-1 1N4150 1n4148 melf package 1n4148 smd diode smd 1n4148

    BKC diode do35

    Abstract: No abstract text available
    Text: Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m


    Original     		PDF 1N4607 1N4150 DO-35 -55oC 031-A BKC diode do35

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3756 Silicon Controlled Rectifier RMS On-State Current, I T R M S Peak One Cycle Surge (non-rep) On-State Current, ITSM I2t (for fusing), for time = l.Q milliseconds (See Chart 9) for time - 8.3 milliseconds (See Chart 9)


    Original     		PDF 2N3756 V4-28

    scr C232

    Abstract: types of scr packages scr C230 C230-C232 SCR TRIGGER PULSE scr c231 C230C C231C C231-C233 SCR 406 C232
    Text: Silicon Controlled Rectifier C230-C232 C231-C233 2 5 ARMS TO 6 0 0 VOLTS The Silicon Controlled Rectifier C230/C232 is a reverse blocking triode thyristor designed for power switching and control circuits for high volume light industrial and consumer applications.


    OCR Scan     		PDF C230-C232 C231-C233 C230/C232 C231/C233 -X123 C230BX123. scr C232 types of scr packages scr C230 SCR TRIGGER PULSE scr c231 C230C C231C C231-C233 SCR 406 C232

    types of scr packages

    Abstract: SCR 131- 6 W 49 General electric SCR manual General electric SCR SCR Manual, General electric transformer 220 volts 60 Hz specifications thyristor SCR 406 Silicon Controlled Rectifier Manual universal MOTOR speed control using scr "scr manual"
    Text: Silicon Controlled Rectifier 35 A RM S C228 C229 50 TO 600 VOLTS The Silicon Controlled Rectifier C228/C229 is a reverse blocking triode thyristor. This SCR is a hermetically sealed device which incorporates General Electric’s patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an


    OCR Scan     		PDF C228/C229 -X123 C228BX123. types of scr packages SCR 131- 6 W 49 General electric SCR manual General electric SCR SCR Manual, General electric transformer 220 volts 60 Hz specifications thyristor SCR 406 Silicon Controlled Rectifier Manual universal MOTOR speed control using scr "scr manual"

    Silicon Controlled Rectifier Manual

    Abstract: types of scr packages General electric SCR manual "scr manual" scr 60 amps 800 volts SCR Manual, General electric universal MOTOR speed control using scr scr manual SCR TRIGGER PULSE 3 phase C229
    Text: C228 C229 Silicon Controlled Rectifier 35 A RM S 50 TO 600 VOLTS The Silicon Controlled Rectifier C228/C229 is a reverse blocking triode thyristor. This SCR is a hermetically sealed device which incorporates General Electric’s patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an


    OCR Scan     		PDF C228/C229 Silicon Controlled Rectifier Manual types of scr packages General electric SCR manual "scr manual" scr 60 amps 800 volts SCR Manual, General electric universal MOTOR speed control using scr scr manual SCR TRIGGER PULSE 3 phase C229

    ZAR710

    Abstract: ZAR610 D13B BZS21 KR56 ZAR210 D11A KR50 KR51 KR52
    Text: SILICON DIODES Silicon Controlled Avalanche Rectifiers Characteristics Max. Ratings at 25°C Vrw m Type No. volts Mean Rect. current Amps Reverse Power kW * Max. Vp at 5 Amps volts Max. I r 91 V RWM lnA Jedec Outline Avalanch e Voltage at 5mA min. max. Outline


    OCR Scan     		PDF ZAR110 ZAR210 ZAR610 ZAR710 ZS120 ZS121 ZS122 ZS123 ZS124 0A-34A D13B BZS21 KR56 D11A KR50 KR51 KR52

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode DO-34 Glass Package 1N4534 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features DO-34 Glass Package • Six sigma quality • Metallurgical^ bonded


    OCR Scan     		PDF 1N4534 DO-34

    1n4864

    Abstract: No abstract text available
    Text: Silicon Switching Diode 1N4864 0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features ► Six sigma quality ► Metallurgical^ bonded ► BKC's Sigma Bond plating


    OCR Scan     		PDF 1N4864 LL-34/35 100mA 031-A SCOS00373* 1n4864

    DIODE ED 34

    Abstract: No abstract text available
    Text: Silicon Switching Diode DO-34 Glass Package Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features D O -34 Glass Package • Six sigma quality • Metallurgical^ bonded • BKC's Sigma Bond plating


    OCR Scan     		PDF DO-34 DIODE ED 34

    SMD DIODE 3s6

    Abstract: SMD 3s6 SMD 437 diode S 437 Diode BKC Semiconductors smd diode s6
    Text: MINI-MELF-SMD | Applications |_ B H H ] Silicon Diode \•■■■j | Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ T X / TXV and S level per


    OCR Scan     		PDF MIL-S-195QQ/437 LL-34/35 DO-35 Mil-S-19 DO-213AA) 1N4153UR-1 DO-213AA 1N4153) SMD DIODE 3s6 SMD 3s6 SMD 437 diode S 437 Diode BKC Semiconductors smd diode s6

    1N3062

    Abstract: No abstract text available
    Text: Silicon Switching Diode 1N3062 I b 0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. D O -35 G la ss P ackage Features Lead Dia. 0.018-0.022" ► Six sigma quality


    OCR Scan     		PDF 1N3062 LL-34/35 031-A 1N3062

    Untitled

    Abstract: No abstract text available
    Text: MINI-MELF-SMD Silicon Diode 1N4148UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. LL-34/35 MINI MELF Features Surface Mo un t P ac kag e D O- 2 13 AA


    OCR Scan     		PDF 1N4148UR-1 DO-35 Mil-S-19500/116 LL-34/35

    LL4150 SMD

    Abstract: BKC Semiconductors DSAIH0002537 p 1 386 SMD diode
    Text: MINI-MELF-SMD Applications 1 LL4 1 5 0 or 1 N4 1 5 0 UR-1 Silicon Switching Diode 1N4150UR-1 / LL4150 Used in general purpose applications .where a controlled forward characteristic and fast switching speed are important. LL-34/35 M INI-M ELF Features SMD Package DO-213AA


    OCR Scan     		PDF 1N4150UR-1 LL4150 LL-34/35 DO-213AA) DO-35 Mil-S-19500/231 4031-B DO-213AA LL4150) LL4150 SMD BKC Semiconductors DSAIH0002537 p 1 386 SMD diode

    Untitled

    Abstract: No abstract text available
    Text: ' " l ì DO-34 Glass Package Silicon Switching Diode 1N 4 d o 1 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features • • • • • D O -3 4 G la s s P a c k a g e


    OCR Scan     		PDF DO-34 100pA

    Untitled

    Abstract: No abstract text available
    Text: MINI-MELF-SMD o Applications Silicon Diode L L 4 1 5 0 1 N r 5 0 U 4 1 R Switching - 1 I D Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXZTXV and S level per


    OCR Scan     		PDF MIL-S-19500/437 LL-34/35 DO-213AA) DO-35 Mil-S-19 4031-B 1N4150UR-1 DO-213AA 1N4150)

    transistor c37

    Abstract: ge c37 series scr C37800 1000 watt transistor 12 volt 100 amperes C37C UNF 505 BR W3680 C37F 2N2647 C37B
    Text: C36 S E R I E S SE E PAGE 328 SCR 800 Volts 25 A. RM S Max. 105° C Max. Case Temperature The C37 Silicon Controlled Rectifier is a three-junction semiconductor device for use in power switching and control applications requiring a blocking voltage of 800 volts or less and average load currents up to 16 amperes. Its low cost makes it


    OCR Scan     		PDF 2N2647. transistor c37 ge c37 series scr C37800 1000 watt transistor 12 volt 100 amperes C37C UNF 505 BR W3680 C37F 2N2647 C37B

    ZS90

    Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
    Text: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250


    OCR Scan     		PDF 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 100mA. KS77B KS78B ZS90 ZS92 diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN7030~j Diffused Junction Silicon Diode DBD10 Is m I ÿ o i 1.OA Single-Phase Bridge Rectifier Features • Plastic m olded structure. • Peak reverse voltage : V R M -200V , 600V. • A verage rectified c u rre n t: lo -I.O A . Package Dimensions


    OCR Scan     		PDF ENN7030 DBD10 -200V