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    LL4153 Price and Stock

    Nexperia PMLL4153,115

    DIODE GEN PURP 50V 200MA LLDS
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    DigiKey PMLL4153,115 Cut Tape 6,051 1
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    PMLL4153,115 Digi-Reel 1
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    PMLL4153,115 Reel 2,500
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    Mouser Electronics PMLL4153,115 46,839
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    Rochester Electronics PMLL4153,115 405,000 1
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    TTI PMLL4153,115 Reel 520,000 2,500
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    TME PMLL4153,115 1
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    Avnet Silica PMLL4153,115 8 Weeks 2,500
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    Chip1Stop PMLL4153,115 11,610
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    EBV Elektronik PMLL4153,115 8 Weeks 2,500
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    Microchip Technology Inc CDLL4153

    DIODE GEN PURP 75V 150MA DO213AA
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    Avnet Americas CDLL4153 Bulk 725
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    Newark CDLL4153 Bulk 725
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    Microchip Technology Inc CDLL4153 544
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    NAC CDLL4153 287
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    Master Electronics CDLL4153
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    Rochester Electronics LLC PMLL4153,115

    NOW NEXPERIA PMLL4153 - RECTIFIE
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    Nexperia PMLL4153115

    Diode Switching 75V 0.2A 2-Pin Mini-MELF T/R - Tape and Reel (Alt: PMLL4153,115)
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    Avnet Americas PMLL4153115 Reel 4 Weeks 15,823
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    Philips E C G Inc PMLL4153,115

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    Bristol Electronics PMLL4153,115 5,000 89
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    LL4153 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LL4153 EIC Semiconductor HIGH SPEED SWITCHING DIODE Original PDF
    LL4153 BKC International Silicon Diode, Switching Applications Scan PDF
    LL4153 International Semiconductor SWITCHING DIODE Scan PDF
    LL4153 ITT Industries General Purpose and Switching Diodes Scan PDF
    LL4153 Micronas Semiconductor Silicon Diodes Scan PDF
    LL4153 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    LL4153 SynSemi Semiconductor Silicon Switching Diode DO-35 Glass Package Scan PDF

    LL4153 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LL4153 HIGH SPEED SWITCHING DIODE MiniMELF SOD-80C Cathode Mark FEATURES : φ 0.063 (1.64) • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Pb / RoHS Free 0.055 (1.40) 0.019(0.48)


    Original
    PDF LL4153 OD-80C) OD-80)

    LL4153

    Abstract: No abstract text available
    Text: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Cathode band Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Value Unit VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient


    Original
    PDF LL4153 LL-34 LL4153

    LL4153

    Abstract: No abstract text available
    Text: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Value Unit VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient


    Original
    PDF LL4153 LL-34 LL4153

    LL4153

    Abstract: No abstract text available
    Text: LL4153 SILICON EPITAXIAL PLANAR SWITCHING DIODE LL-34 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 75 V Average Rectified Forward Current IF(AV) 200 mA IFSM 1 4 A Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient


    Original
    PDF LL4153 LL-34 LL4153

    LL4153

    Abstract: No abstract text available
    Text: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Unit Value VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient


    Original
    PDF LL4153 LL-34 LL4153

    ll4153

    Abstract: No abstract text available
    Text: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Value Unit VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient


    Original
    PDF LL4153 LL-34 ll4153

    Untitled

    Abstract: No abstract text available
    Text: LL4153 HIGH SPEED SWITCHING DIODE MiniMELF SOD-80C Cathode Mark FEATURES : φ 0.063 (1.64) • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6)


    Original
    PDF LL4153 OD-80C) OD-80)

    LL4153

    Abstract: No abstract text available
    Text: LL4153 HIGH SPEED SWITCHING DIODE MiniMELF SOD-80C Cathode Mark FEATURES : φ 0.063 (1.64) • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Pb / RoHS Free 0.055 (1.40) 0.019(0.48)


    Original
    PDF LL4153 OD-80C) OD-80) LL4153

    LL914

    Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current


    Original
    PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4453 LL914 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454

    LL4149

    Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV


    Original
    PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 max30 LL4453 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914

    LL4149

    Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV


    Original
    PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4453 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914

    diodes ir

    Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV


    Original
    PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 max30 LL4453 diodes ir LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914

    BAQ33

    Abstract: BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151
    Text: Surface Mount Fast / Ultra Fast Bridge Rectifiers Part No. CrossReference RMB2S RMB4S RMB6S - EDF1AS EDF1BS EDF1CS EDF1DS - Max. Avg. Rectified Current Peak Inverse Voltage Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25oC @ Rated Io


    Original
    PDF -65oC 175oC KDS160E BAQ33 BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151

    1N4153

    Abstract: 1N4153M LL4153
    Text: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4153 1N4153M LL4153 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n


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    PDF 1N4153 1N4153M LL4153 LL-34 100pA 250pA

    SMD 437 diode

    Abstract: BKC Semiconductors DSAIH0002562 0000b32
    Text: MINI-MELF-SMD LL4153 Applications II] Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXJ TXV and S level per


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    PDF LL4153 MIL-S-19500/437 LL-34/35 DO-35 Mil-S-19500 DO-213AA) 4031-B 1N4153UR-1 DO-213AA SMD 437 diode BKC Semiconductors DSAIH0002562 0000b32

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode i 1N4153 fe0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features • • • • • • DO-35 Glass Package nominal dimensions


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    PDF 1N4153 fe0-35 DO-35 LL-34/35 Mil-S-19500/437 Surg100 1N4153 DO-213AA LL4153) 1N4153UR-1HR,

    Untitled

    Abstract: No abstract text available
    Text: 4684955 a? I T T SEMICONDUCTORS 87D 02327 »e 1m^a^ss 0DDS3a? t J~ D r . o9 SILICON DIODES General Purpose and Switching Diodes in MiniMELF Package Type Peak Inv. Voltage PIV M ax. Aver. Rectified Current lo Pow er Junction Dissipation Tem peraat 25 °C ture T,


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    PDF LL4148 LL4149 LL4150 LL4151 LL4152 LL4153 LL4154 LL4446 LL4447 LL4448

    LL4149

    Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454
    Text: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.


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    PDF 4b62711 01--K LL4149 LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454

    diode smd ED 84

    Abstract: DSAIH00025343 SMD 437 diode
    Text: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality


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    PDF 1N4153 DO-35 LL-34/35 Mil-S-19500/437 4031-B 1N4153 DO-213AA LL4153) 1N4153UR-1HR, diode smd ED 84 DSAIH00025343 SMD 437 diode

    TCA700Y equivalent

    Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25
    Text: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers


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    PDF DIGIT2000 237th YU-61000 TCA700Y equivalent SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25

    ph 4148

    Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
    Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31


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    PDF BAS29 BA481 BBY31 BAT81 BAS81 BBY40 BC847 BAT54 BC847A BT2907 ph 4148 f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71

    A2 diode

    Abstract: 1N414S
    Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G


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    PDF 00Q13QÔ DO-35 1N914 1N414S 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 A2 diode

    1n4148 ITT

    Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153
    Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power


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    PDF DO-35 1N914 lF-10mA RL-100Â 1N4148 1N4149 1N4150 1n4148 ITT 1N914 ITT 1N914/1N4148 1n4448 itt 1N4151 1N4152 1N4153

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


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    PDF LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31