Silicon Microstructures
Abstract: OEM PRESSURE SILICON DIE SM5112 harsh pressure die Microstructures
Text: SM5112 SILICON MICROSTRUCTURES INCORPORATED • • Harsh Environment Absolute Silicon Pressure Die OEM ABSOLUTE SILICON PRESSURE SENSOR DIE FOR HARSH ENVIRONMENTS REAR ENTRY FOR PROTECTION OF THE PIEZORESISTIVE BRIDGE NETWORK – ONLY SILICON AND GLASS EXPOSED
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SM5112
SM5112
Silicon Microstructures
OEM PRESSURE SILICON DIE
harsh pressure die
Microstructures
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode
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SPM1007
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C31-YMLLLLS
Abstract: 1Mx16x4 1Mx16x4 SDRAM SPRU190 TMS320C6000 TMS320C6202 TMS320C6202B
Text: TMS320C6202, TMS320C6202B Digital Signal Processors Silicon Errata C6202 Silicon Revisions 1.0, 1.1, 1.2 C6202B Silicon Revisions 3.0, 3.1 SPRZ152H November 2000 Revised February 2004 Copyright 2003, Texas Instruments Incorporated TMS320C6202, TMS320C6202B Silicon Errata
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TMS320C6202,
TMS320C6202B
C6202
C6202B
SPRZ152H
TMS320C6202B
SPRZ152G
SPRZ152H
C31-YMLLLLS
1Mx16x4
1Mx16x4 SDRAM
SPRU190
TMS320C6000
TMS320C6202
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Silicon Microstructures
Abstract: MEDICAL PRESSURE die SM5102 OEM PRESSURE SILICON DIE
Text: SM5102 SILICON MICROSTRUCTURES INCORPORATED • OEM Silicon Pressure Die OEM SILICON PRESSURE SENSOR DIE DESCRIPTION Compensated The SM5102 is a silicon micro-machined, piezoresistive pressure-sensing chip. These devices are available in full-scale ranges
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SM5102
SM5102
Silicon Microstructures
MEDICAL PRESSURE die
OEM PRESSURE SILICON DIE
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TMS320TCI6484
Abstract: DMC TOOLS spruea7 "saturation value"
Text: TMS320TCI6484 Fixed-Point Digital Signal Processor Silicon Revisions 1.0, 1.1, 1.2, 1.3, 1.4 Silicon Errata Literature Number: SPRZ299 November 2009 www.ti.com 2 TMS320TCI6484 Fixed-Point Digital Signal Processor Silicon Errata Silicon Revisions 1.0, 1.1, 1.2, 1.3, 1.4
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TMS320TCI6484
SPRZ299
TMS320TCI6484
SPRZ299--November
DMC TOOLS
spruea7
"saturation value"
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EPKT
Abstract: EPKT Termination markings 27B2 TMS320 TMS320C6421 TMS320C6424 spru871 C642x TMS320C6424ZWT
Text: TMS320C6424/21 Digital Signal Processor DSP Silicon Revisions 1.3, 1.2, 1.1, and 1.0 Silicon Errata Literature Number: SPRZ252C March 2007 – Revised January 2008 Silicon Errata SPRZ252C – March 2007 – Revised January 2008 TMS320C642x DSP Silicon Revisions 1.3, 1.2, 1.1, and 1.0
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TMS320C6424/21
SPRZ252C
TMS320C642x
TMS320C642x
TMS320C6424
TMS320C6421)
SPRS347)
TMS320C6421
EPKT
EPKT Termination
markings 27B2
TMS320
spru871
C642x
TMS320C6424ZWT
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DM6437ZWT
Abstract: TMS320DM6437 dm6437 DM6431 A120 SPRU983 TMS320DM6431 TMS320DM6435 I2C applications DM6437 27B2
Text: TMS320DM6437/35/33/31 Digital Media Processor DMP Silicon Revisions 1.3, 1.2, 1.1, and 1.0 Silicon Errata Literature Number: SPRZ250D January 2007 – Revised January 2008 Silicon Errata SPRZ250D – January 2007 – Revised January 2008 TMS320DM643x DMP Silicon Revisions 1.3, 1.2, 1.1, and
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TMS320DM6437/35/33/31
SPRZ250D
TMS320DM643x
TMS320DM643x
TMS320DM6437,
TMS320DM6435,
TMS320DM6433,
TMS320DM6431)
TMS320DM6437
DM6437ZWT
dm6437
DM6431
A120
SPRU983
TMS320DM6431
TMS320DM6435
I2C applications DM6437
27B2
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Diode press-fit
Abstract: No abstract text available
Text: BYZ 50A22 . BYZ50K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 222 270 Silicon Press-fit diodes Silicon Protectifiers with
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50A22
BYZ50K39
071855F
BYZ50K39
07185J
Diode press-fit
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e660
Abstract: No abstract text available
Text: BYZ 35A22 . BYZ 35K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 333 391 Silicon Press-fit diodes Silicon Protectifiers with
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35A22
35K39
35K39
e660
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full wave bridge rectifier
Abstract: SHB645052E
Text: SHB645052E SENSITRON SEMICONDUCTOR Technical Data Datasheet 4287 REV. – HERMETIC QUAD SILICON CARBIDE RECTIFIER DESCRIPTION: FOUR 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIERS IN A HERMETIC DUAL TO-257 PACKAGE. IDEAL FOR CONNECTION AS A BRIDGE. FEATURES:
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SHB645052E
1200-VOLT,
O-257
full wave bridge rectifier
SHB645052E
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175C
Abstract: SHB645052E 1200-VOLT
Text: SHB645052E SENSITRON SEMICONDUCTOR Technical Data Datasheet 4287 REV. A HERMETIC QUAD SILICON CARBIDE RECTIFIER DESCRIPTION: FOUR 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIERS IN A HERMETIC DUAL TO-257 PACKAGE. IDEAL FOR CONNECTION AS A BRIDGE. FEATURES:
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SHB645052E
1200-VOLT,
O-257
175C
SHB645052E
1200-VOLT
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SHB636053E
Abstract: No abstract text available
Text: SENSITRON SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
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SHB636053E
2500-VOLT,
15000-VOLT
SHB636053E
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sop8901
Abstract: No abstract text available
Text: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.
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OP8901
ENN8199
sop8901
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Bridge Rectifiers
Abstract: No abstract text available
Text: STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS January 16, 1998 S3BR05 thru S3BR30 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 5 2008 SEMTECH CORP 258 www.semtech.com STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS S3BR05 thru
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S3BR05
S3BR30
Bridge Rectifiers
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SHB681123E
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
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SHB681123E
2500-VOLT,
15000-VOLT
SHB681123E
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
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SHB636053E
2500-VOLT,
15000-VOLT
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SHB636053E
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
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SHB636053E
2500-VOLT,
15000-VOLT
SHB636053E
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4804
Abstract: C 4804 4804 B MOSFET Module 24v 200A MSK4804
Text: MIL-PRF-38534 CERTIFIED 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery
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MIL-PRF-38534
200V/100A
MIL-PRF-38534
MSK4804
4804
C 4804
4804 B
MOSFET Module 24v 200A
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SHB601052E
Abstract: No abstract text available
Text: SENSITRON_ SEMICONDUCTOR SHB601052E Technical Data Datasheet 4308 REV. C Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:
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SHB601052E
1200-VOLT,
O-258
MO-078)
SHB601052E
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175C
Abstract: SHB681123E
Text: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
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SHB681123E
2500-VOLT,
15000-VOLT
175C
SHB681123E
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Bridge Rectifiers
Abstract: BRIDGE-RECTIFIER S3BR05 S3BR30
Text: STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS January 16, 1998 1997 SEMTECH CORP. S3BR05 thru S3BR30 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 STANDARD RECOVERY 3-PHASE SILICON BRIDGE RECTIFIERS
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S3BR05
S3BR30
Bridge Rectifiers
BRIDGE-RECTIFIER
S3BR05
S3BR30
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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RAS310AF
Abstract: RAS310AF-1B1 RAS310 ITT Semiconductors avalanche rectifier
Text: ITT Sem iconductors Silicon Rectifier Bridges Silicon Avalanche Rectifier Bridge 1i Am p Type RAS310AF-1B1 The R A S 3 1 0 A F silicon 1 i am p avalanche rectifiers are available as miniature assem blies. T h ese assem blies, incorporating tour rectifiers
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RAS310AF-1B1
RAS310AF
RAS310AF-1B1
1272B
RAS310
ITT Semiconductors
avalanche rectifier
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EJ marking
Abstract: No abstract text available
Text: Central" CBR1-D020S SERIES Semiconductor Corp. SURFACE MOUNT 1 AMP DUAL IN LINE SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount mold
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CBR1-D020S
CBR1D020S
CBR1D040S
13-November
EJ marking
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