Untitled
Abstract: No abstract text available
Text: SILICON360 S51232FVRH: 512K x 32 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to
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SILICON360
S51232FVRH:
8E11rad/second
IO0-IO31
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon360 S512 Series SRAMs 512Kx16,x32,x40-bit Radiation Tolerant Static RAM Features: • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latch-up; Dose rate ranging from 1.0E9 to
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Silicon360
512Kx16
x40-bit
8E11rad/second
106MeV-cm2
84-Lead
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON360 S51240FVRH: 512K x 40 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to
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SILICON360
S51240FVRH:
8E11rad/second
106MeV-cm2
IO0-IO31
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: SCV64 User Manual http://www.silicon360.com The information in this document is subject to change without notice and should not be construed as a commitment by Silicon360. While reasonable precautions have been taken, Silicon360 assumes no responsibility for any errors that may appear in this document.
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SCV64â
silicon360
SCV64
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PDF
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Untitled
Abstract: No abstract text available
Text: TitlePage - 80C1000_MA002_02 Tsi106 PowerPC Host Bridge Hardware Specifications Manual Document Number: 80C1000_MA002_02 Document Status: Formal Release Date: October 2006 Silicon 360™ Trademarks Silicon360 is a registered trademark of Silicon Turnkey Solutions. Silicon360, the Silicon360 logo, Tsi106, and
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80C1000
Tsi106â
Silicon360
Tsi106,
Tsi106
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Untitled
Abstract: No abstract text available
Text: SILICON360 S51216FVRH: 512K x 16-Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to
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SILICON360
S51216FVRH:
16-Bit
8E11rad/second
106MeV-cm2
IO0-IO31
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: Tsi205-CED: Primary Side Monitor Features • Input voltage measurement 24 or 48 V • 10-bit analog-to-digital converter (ADC) • Input voltage measurement accuracy 0.5% • Fuse status monitoring, high and low side • Primary current sensing and measurement
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Tsi205-CED:
10-bit
Tsi205-CED
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: Tsi257-CED: Power Subsystem Controller with Fault Log Features • Fully interlocked management of six power supplies • Programmable sequencing for startup, shutdown, and fault conditions • Programmable output OV and UV warning and fault thresholds • Multiple sequencing topologies
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Tsi257-CED:
10-bit,
Tsi20x
Tsi20x.
Tsi257â
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: ADC0804S030/040/050: Single 8 bits ADC, up to 30 MHz, 40 MHz or 50 MHz Features • • • • • • • • • • • • • • 8-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large
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ADC0804S030/040/050:
ADC0804S030TS
ADC0804S040TS
ADC0804S050TS
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PDF
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Untitled
Abstract: No abstract text available
Text: TSP776xx: Features • Controlled baseline • One assembly/test site, one fabrication site • Extended temperature performance of −40 °C to 125 °C • Enhanced diminishing manufacturing sources DMS support • Enhanced product change notification • Qualification pedigree†
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TSP776xx:
500-mA
TPS77633)
20-pin
TPS776xx
TPS776xx:
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: TDA8768AH/4/5/7/8: Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Features • • • • • • • • • • • • • • • • 12-bit resolution Sampling rate up to 70 MHz -3 dB bandwidth of 245 MHz 5 V power supplies and 3.3 V output power supply
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TDA8768AH/4/5/7/8:
12-bit
ADC1206S040H
ADC1206S055H
ADC1206S070H
TDA8768AH/4
TDA8768AH/5
TDA8768AH/7
TDA8768AH/8
ADC1206S040/055/070:
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Untitled
Abstract: No abstract text available
Text: ADC1207S080: Single 12 Bits ADC, Up to 80 MHz with Direct/Ultra High IF Sampling Features • 12-bit resolution • Differential input with 375 MHz bandwidth • 90 dB SFDR; 71 dB S/N fi = 225 MHz; fclk = 80 MHz; B = 5 MHz • 74 dB SFDR; 66.5 dB S/N (fi = 175 MHz;
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ADC1207S080:
12-bit
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2000: Complete 4-Channel Motion Control System Product Feature Sheet Features • 4 Bi-directional PWM motor control channels • 4 Kelvin motor current sense pairs • 10 multi-purpose sensor inputs • Internal 10-bit ADC • Integrated 8051 micro controller
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Si2000:
10-bit
SI2000
68-lead
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3000: 40 V Output Hi-Current H-Bridge Motor Driver Product Feature Sheet Features • Low input voltage range: 3 to 5 V • Wide output voltage range: 5 to 40 V • Bi-directional output drive current: 10 A maximum • PWM ouput driven with 5 V input for
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Si3000:
SI3000
Silicon360
SI2000,
68-lead
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Untitled
Abstract: No abstract text available
Text: TDA9910HW/8: Single 12 Bits ADC, Up to 80 MHz with Direct/Ultra High IF Sampling Features • 12-bit resolution • Differential input with 375 MHz bandwidth • 90 dB SFDR; 71 dB S/N fi = 225 MHz; fclk = 80 MHz; B = 5 MHz • 74 dB SFDR; 66.5 dB S/N (fi = 175 MHz;
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TDA9910HW/8:
12-bit
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: S51216FVRH: 512K x 16-Bit Radiation-Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 krads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0 E9 to 1.8
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S51216FVRH:
16-Bit
E11rad/second
IO0-IO31
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: Tsi578-CED: Serial RapidIO Switch Features • 80 Gbps aggregate bandwidth • Low latency with cut-through capability • Enhanced SerDes for low power solution • RapidIO Interconnect Specification Revision 1.3 compliant • High performance hardware multicast
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Tsi578-CED:
8b/10b
Tsi568A
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: ADC1206S040/055/070: Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Features • • • • • • • • • • • • • • • • 12-bit resolution Sampling rate up to 70 MHz -3 dB bandwidth of 245 MHz 5 V power supplies and 3.3 V output power supply
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ADC1206S040/055/070:
12-bit
co206S040H
ADC1206S055H
ADC1206S070H
ADC1206S040H/C1
ADC1206S055H/C1
ADC1206S070H/C1
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Untitled
Abstract: No abstract text available
Text: ADC1004S030/040/050: Single 10 Bits ADC, Up to 30, 40, or 50 MHz Features • • • • • • • • • • • • • • 10-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large
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ADC1004S030/040/050:
10-bit
ADC1004S030TS
ADC1004S040TS
ADC1004S050TS
50MHz
SCV64
silicon360
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PDF
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ARM11 processor block diagram
Abstract: ARM11 processor NFP-3240
Text: SiNFP-32xx Flow Processor: Ruggedized Netronome NFP; 133 MHz DDR3 Product Highlights • Source-code compatibility including backwards-compatibility with Intel IXP28XX microengines for customer application migration • High-performance solution with low power consumption for a broad
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SiNFP-32xx
IXP28XX
Mpps/20
70-million
64-byte
SiNFP-3224-0-A2-BM10
SiNFP-3224-0-A2-CM10
SiNFP-3224-0-A2-DM10
SiNFP-3224-8-A2-AM10
SiNFP-3224-8-A2-BM10
ARM11 processor block diagram
ARM11 processor
NFP-3240
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Untitled
Abstract: No abstract text available
Text: ADC0804S030/040/050: Single 8 bits ADC, up to 30 MHz, 40 MHz or 50 MHz Features • • • • • • • • • • • • • • 8-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large
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ADC0804S030/040/050:
ADC0804S030TS
ADC0804S040TS
ADC0804S050TS
ADC0804S030TS/C1
ADC0804S040TS/C1
ADC0804S050TS/C1
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C
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MT41K512M4
MT41K256M8
MT41K128M16
8192-cycle
silicon360
silicon36
andSi360
Si360
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Untitled
Abstract: No abstract text available
Text: Universe II : Features • Industry-proven, high-performance 64bit VMEbus interconnect • Fully compliant, 32-bit or 64-bit, 33MHz PCI bus interconnect • Integral FIFOs for write posting to maximize bandwidth utilization • Programmable DMA controller with
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64bit
32-bit
64-bit,
33MHz
CA91C142D-33CB
CA91C142D-33IB
CA91C142E-25EB
silicon360
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PDF
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Untitled
Abstract: No abstract text available
Text: ADC1004S030/040/050: Single 10 Bits ADC, Up to 30, 40, or 50 MHz Features • • • • • • • • • • • • • • 10-bit resolution Sampling rate up to 50 MHz DC sampling allowed One clock cycle conversion only High signal-to-noise ratio over a large
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ADC1004S030/040/050:
10-bit
ADC1004S030TS
ADC1004S040TS
ADC1004S050TS
50MHz
ADC1004S030TS/C1
ADC1004S040TS/C1
ADC1004S050TS/C1
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