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    Vishay Siliconix SIHP25N50E-BE3

    N-CHANNEL 500V
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    DigiKey SIHP25N50E-BE3 Tube 2,988 1
    • 1 $3.35
    • 10 $3.35
    • 100 $1.5542
    • 1000 $1.44124
    • 10000 $1.44124
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    Bristol Electronics SIHP25N50E-BE3 850
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    Vishay Intertechnologies SIHP25N50E-GE3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHP25N50E-GE3)
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    Avnet Americas SIHP25N50E-GE3 Reel 21 Weeks 1,000
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    • 1000 $1.44125
    • 10000 $1.35647
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    Mouser Electronics SIHP25N50E-GE3 697
    • 1 $3.67
    • 10 $2.95
    • 100 $2.23
    • 1000 $1.44
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    Newark SIHP25N50E-GE3 Bulk 1
    • 1 $4.17
    • 10 $3.2
    • 100 $2.63
    • 1000 $2.23
    • 10000 $2.18
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    TTI SIHP25N50E-GE3 Tube 1,000
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    • 1000 $1.49
    • 10000 $1.41
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    TME SIHP25N50E-GE3 1
    • 1 $2.77
    • 10 $2.24
    • 100 $1.85
    • 1000 $1.71
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    EBV Elektronik SIHP25N50E-GE3 21 Weeks 50
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    Vishay Intertechnologies SIHP25N50E-BE3

    N-CHANNEL 500V - Rail/Tube (Alt: SIHP25N50E-BE3)
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    Avnet Americas SIHP25N50E-BE3 Tube 21 Weeks 1,000
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    • 1000 $1.44125
    • 10000 $1.35647
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    Mouser Electronics SIHP25N50E-BE3 405
    • 1 $3.52
    • 10 $3.27
    • 100 $1.87
    • 1000 $1.44
    • 10000 $1.44
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    TTI SIHP25N50E-BE3 Tube 9,000 50
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    • 100 $1.57
    • 1000 $1.42
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    TME SIHP25N50E-BE3 1
    • 1 $2.74
    • 10 $2.46
    • 100 $2.18
    • 1000 $1.78
    • 10000 $1.78
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    Vyrian SIHP25N50E-BE3 3,736
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    Vishay Semiconductors SIHP25N50E-GE3

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    Onlinecomponents.com SIHP25N50E-GE3 255
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    • 100 $2.4
    • 1000 $2.21
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    Vishay Siliconix SIHP25N50EGE3

    POWER MOSFET Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA SIHP25N50EGE3 1,000
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    SIHP25N50E Datasheets (1)

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    SIHP25N50E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-220AB Original PDF

    SIHP25N50E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHP25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		SiHP25N50E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		SiHP25N50E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: philip.zuk@vishay.com SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: •      Continued high performance low switching and


    Original     		SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E PDF