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    SIHP22N65E Price and Stock

    Vishay Siliconix SIHP22N65E-GE3

    MOSFET N-CH 650V 22A TO220AB
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    DigiKey SIHP22N65E-GE3 Tube 1,000
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    Vishay Intertechnologies SIHP22N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHP22N65E-GE3)
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    Avnet Americas SIHP22N65E-GE3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHP22N65E-GE3 960
    • 1 $4.65
    • 10 $3.51
    • 100 $2.72
    • 1000 $2.07
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    Bristol Electronics SIHP22N65E-GE3 1,000
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    Quest Components SIHP22N65E-GE3 800
    • 1 $5.064
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    • 1000 $2.532
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    TME SIHP22N65E-GE3 1
    • 1 $4.17
    • 10 $3.75
    • 100 $2.98
    • 1000 $2.77
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    EBV Elektronik SIHP22N65E-GE3 19 Weeks 50
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    SIHP22N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP22N65E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-220AB Original PDF

    SIHP22N65E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are


    Original
    SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SiHP22N65E AN609, 7570u 6281m 6682m 0914u 23-Jul-14 PDF