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    SIHP12N65E Price and Stock

    Vishay Siliconix SIHP12N65E-GE3

    MOSFET N-CH 650V 12A TO220AB
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    DigiKey SIHP12N65E-GE3 Tube 1,000
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    Vishay Intertechnologies SIHP12N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHP12N65E-GE3)
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    Avnet Americas SIHP12N65E-GE3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHP12N65E-GE3 742
    • 1 $2.28
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    Newark SIHP12N65E-GE3 Bulk 958 1
    • 1 $2.46
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    TTI SIHP12N65E-GE3 Tube 2,000 50
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    TME SIHP12N65E-GE3 1
    • 1 $2.19
    • 10 $1.55
    • 100 $1.37
    • 1000 $1.27
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    EBV Elektronik SIHP12N65E-GE3 20 Weeks 50
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    SIHP12N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP12N65E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 12A TO-220AB Original PDF

    SIHP12N65E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Figure-of-Merit (FOM) Ron x Qg 0.392 • • • • • 70 Qgs (nC)


    Original     		PDF SiHP12N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16


    Original     		PDF SiHP12N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16 Configuration


    Original     		PDF SiHP12N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP12N65E AN609, 9430m 6635m 1327m 2651u 02-Apr-13