IRLD120
Abstract: No abstract text available
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
2002/95/EC
11-Mar-11
IRLD120
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Untitled
Abstract: No abstract text available
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irld-120
Abstract: IRLD120
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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PDF
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IRLD120,
SiHLD120
2002/95/EC
18-Jul-08
irld-120
IRLD120
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Untitled
Abstract: No abstract text available
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
2002/95/EC
11-Mar-11
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IRLD120PBF
Abstract: SiHLD120
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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PDF
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IRLD120,
SiHLD120
18-Jul-08
IRLD120PBF
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Untitled
Abstract: No abstract text available
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRLD120
Abstract: vishay 1841
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
2002/95/EC
18-Jul-08
IRLD120
vishay 1841
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IRLD120
Abstract: IRLD120PbF SiHLD120
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
18-Jul-08
IRLD120
IRLD120PbF
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SiHLD120
Abstract: No abstract text available
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
12-Mar-07
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4501M
Abstract: AN609 IRLD120
Text: IRLD120_RC, SiHLD120_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLD120
SiHLD120
AN609,
0426m
8968m
4501m
6212m
02-Nov-10
4501M
AN609
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Untitled
Abstract: No abstract text available
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
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IRLD120,
SiHLD120
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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