Untitled
Abstract: No abstract text available
Text: IRFPC60_RC, SiHFPC60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFPC60
SiHFPC60
AN609,
06-Jul-10
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IRFPC60PB
Abstract: No abstract text available
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFPC60PB
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Untitled
Abstract: No abstract text available
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
O-247AC
O-220AB
O-247AC
O-218
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve
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IRFPC60LC,
SiHFPC60LC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
O-247AC
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve
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PDF
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IRFPC60LC,
SiHFPC60LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve
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IRFPC60LC,
SiHFPC60LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFPC60
Abstract: No abstract text available
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFPC60
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Untitled
Abstract: No abstract text available
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
O-247
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
2002/95/EC
O-247AC
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve
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IRFPC60LC,
SiHFPC60LC
12-Mar-07
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IRFPC60LC
Abstract: SiHFPC60LC IRFPC6
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve
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IRFPC60LC,
SiHFPC60LC
11-Mar-11
IRFPC60LC
IRFPC6
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Untitled
Abstract: No abstract text available
Text: IRFPC60LC_RC, SiHFPC60LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFPC60LC
SiHFPC60LC
AN609,
06-Jul-10
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IRFPC60
Abstract: SiHFPC60 IRFPC6
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFPC60
IRFPC6
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IRFPC60
Abstract: IRFPC60 input SiHFPC60 ISD 3900
Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFPC60,
SiHFPC60
O-247
O-220
O-218
18-Jul-08
IRFPC60
IRFPC60 input
ISD 3900
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IRFPC60LC
Abstract: SiHFPC60LC
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve
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IRFPC60LC,
SiHFPC60LC
18-Jul-08
IRFPC60LC
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Untitled
Abstract: No abstract text available
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFPC60LC,
SiHFPC60LC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.40 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single Available RoHS* COMPLIANT DESCRIPTION D This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFPC60LC,
SiHFPC60LC
2002/95/EC
11-Mar-11
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