Untitled
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irfp27n60k
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
11-Mar-11
irfp27n60k
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Untitled
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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IRFP27N60K,
SiHFP27N60K
O-247
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFP27N60K_RC, SiHFP27N60K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP27N60K
SiHFP27N60K
AN609,
14-Jun-10
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Untitled
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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irfp27n60kpbf
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfp27n60kpbf
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IRFP27N60K
Abstract: SiHFP27N60K irfp27n60kpbf
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
O-247
18-Jul-08
IRFP27N60K
irfp27n60kpbf
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Untitled
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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