di 856
Abstract: No abstract text available
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 COMPLIANT • 175 °C Operating Temperature
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IRFIZ14G,
SiHFIZ14G
O-220
12-Mar-07
di 856
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IR*z14* so
Abstract: IRFIZ14G
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 COMPLIANT • 175 °C Operating Temperature
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IRFIZ14G,
SiHFIZ14G
O-220
18-Jul-08
IR*z14* so
IRFIZ14G
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Untitled
Abstract: No abstract text available
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration
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IRFIZ14G,
SiHFIZ14G
O-220
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration RoHS*
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PDF
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IRFIZ14G,
SiHFIZ14G
O-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration
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Original
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PDF
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IRFIZ14G,
SiHFIZ14G
2002/95/EC
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration
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Original
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PDF
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IRFIZ14G,
SiHFIZ14G
2002/95/EC
O-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration
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IRFIZ14G,
SiHFIZ14G
2002/95/EC
O-220
11-Mar-11
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IRFIZ14G
Abstract: No abstract text available
Text: IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration RoHS*
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IRFIZ14G,
SiHFIZ14G
O-220
2002/95/EC
18-Jul-08
IRFIZ14G
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Untitled
Abstract: No abstract text available
Text: IRFIZ14G_RC, SiHFIZ14G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFIZ14G
SiHFIZ14G
AN609,
31-May-10
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