Untitled
Abstract: No abstract text available
Text: IRFIBE30G_RC, SiHFIBE30G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIBE30G
SiHFIBE30G
AN609,
31-May-10
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SiHFIBE30G
Abstract: No abstract text available
Text: IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFIBE30G,
SiHFIBE30G
O-220
12-Mar-07
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SiHFIBE30G
Abstract: No abstract text available
Text: IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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PDF
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IRFIBE30G,
SiHFIBE30G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiHFIBE30G
Abstract: No abstract text available
Text: IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFIBE30G,
SiHFIBE30G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFIBE30G
Abstract: SiHFIBE30G SiHFIBE30G-E3
Text: IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFIBE30G,
SiHFIBE30G
O-220
18-Jul-08
IRFIBE30G
SiHFIBE30G-E3
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S813
Abstract: IRFIBE30G SiHFIBE30G
Text: IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFIBE30G,
SiHFIBE30G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S813
IRFIBE30G
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IRFIBE30G
Abstract: SiHFIBE30G SiHFIBE30G-E3
Text: IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFIBE30G,
SiHFIBE30G
O-220
11-Mar-11
IRFIBE30G
SiHFIBE30G-E3
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