Untitled
Abstract: No abstract text available
Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement
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IRFI840GLC,
SiHFI840GLC
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiHFI840G
Abstract: IRFI840G SiHFI840G-E3
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
11-Mar-11
IRFI840G
SiHFI840G-E3
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90-370
Abstract: AN609 IRFI840GLC SiHFI840GLC
Text: IRFI840GLC_RC, SiHFI840GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFI840GLC
SiHFI840GLC
AN609,
11-May-10
90-370
AN609
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Untitled
Abstract: No abstract text available
Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement
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Original
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PDF
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IRFI840GLC,
SiHFI840GLC
O-220
12-Mar-07
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IRFI840G
Abstract: No abstract text available
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFI840G
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IRFI840G
Abstract: SiHFI840G SiHFI840G-E3
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
18-Jul-08
IRFI840G
SiHFI840G-E3
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IRFI840G
Abstract: SiHFI840G SiHFI840G-E3
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
18-Jul-08
IRFI840G
SiHFI840G-E3
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IRFI840GLC
Abstract: SiHFI840GLC SiHFI840GLC-E3 SiHFI840G
Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement
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Original
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PDF
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IRFI840GLC,
SiHFI840GLC
O-220
11-Mar-11
IRFI840GLC
SiHFI840GLC-E3
SiHFI840G
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SiHFI840G
Abstract: IRFI840G
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
12-Mar-07
IRFI840G
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SiHFI840G
Abstract: No abstract text available
Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement
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Original
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PDF
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IRFI840GLC,
SiHFI840GLC
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiHFI840G
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IRFI840G
Abstract: No abstract text available
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFI840G
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SiHFI840G
Abstract: No abstract text available
Text: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement
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Original
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PDF
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IRFI840GLC,
SiHFI840GLC
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SiHFI840G
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AN609
Abstract: IRFI840G SiHFI840G
Text: IRFI840G_RC, SiHFI840G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRFI840G
SiHFI840G
AN609,
11-May-10
AN609
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SiHFI840G
Abstract: IRFI840G
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IRFI840G
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IRFI840G
Abstract: SiHFI840G SiHFI840G-E3
Text: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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PDF
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IRFI840G,
SiHFI840G
O-220
IRFI840G
SiHFI840G-E3
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