Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHD3N50DA Search Results

    SIHD3N50DA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50DA_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHD3N50DA AN609, 8755u 6698m 8998m 7460m 09-Jan-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original     		SiHD3N50DA O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF