03N60S5
Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
Text: SPP03N60S5 SPB03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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SPP03N60S5
SPB03N60S5
SPPx4N60S5/SPBx4N60S5
SPP03N60S5
P-TO220-3-1
P-TO263-3-2
03N60S5
Q67040-S4184
03N60S5
Q67040-S4184
SPB03N60S5
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04N60S5
Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60
Text: SPU04N60S5 SPD04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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SPU04N60S5
SPD04N60S5
SPUx6N60S5/SPDx6N60S5
SPU04N60S5
P-TO251-3-1
P-TO252
04N60S5
Q67040-S4228
04N60S5
SPD04N60S5
P-TO251-3-1
P-TO252
04N60
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03N60S5
Abstract: SPD03N60S5 P-TO251-3-1 P-TO252 SPU03N60S5
Text: SPU03N60S5 SPD03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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SPU03N60S5
SPD03N60S5
SPUx4N60S5/SPDx4N60S5
SPU03N60S5
P-TO251-3-1
P-TO252
03N60S5
Q67040-S4227
03N60S5
SPD03N60S5
P-TO251-3-1
P-TO252
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siemens soft starter 3rw44
Abstract: Sirius 3Rv siemens star delta starter 3RW44 siemens soft starter Sirius 3RW40 3RW4900-0KC00 star delta motor starter with siemens contactor 3RW444 3UF7940-0AA00-0
Text: Siemens AG 2008 Dynamics Reinterpreted The Comprehensive Range of SIRIUS Soft Starters www.siemens.com/softstarter © Siemens AG 2008 The Ideal SIRIUS Soft Starter for All Applications Today, three-phase motors serve as the ultimate drive concept. Yet, for many
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E20001-A1040-P302-X-7600
21C/9315
siemens soft starter 3rw44
Sirius 3Rv
siemens star delta starter
3RW44
siemens soft starter
Sirius 3RW40
3RW4900-0KC00
star delta motor starter with siemens contactor
3RW444
3UF7940-0AA00-0
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siemens automotive relay dc 12v
Abstract: C166 GPS05094 siemens relay dc 12v 12V siemens relay
Text: Target Data Sheet TLE 6225 G Smart Quad Low-Side Switch Features • Shorted circuit protection • Overtemperature protection • Overvoltage protection • Direct parallel control of the inputs • Inputs high or low active programmable • General fault flag
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gto 2400 capacitor
Abstract: PTC 8750 B25856-K1405-K003 KA 1400 capacitor 2200 uF siemens gto 2400 B25856K2104K003
Text: Capacitors for Power Electronics Series/Type: B25856 The following products presented in this data sheet are being withdrawn. Ordering Code B25856K2155K003 B25856K2104K003 B25856K3505K003 B25856K3105K003 B25856K3504K003 B25856K3204K003 B25856K7305K003 B25856K7155K003
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B25856
B25856K2155K003
B25856K2104K003
B25856K3505K003
B25856K3105K003
B25856K3504K003
B25856K3204K003
B25856K7305K003
B25856K7155K003
B25856K7504K003
gto 2400 capacitor
PTC 8750
B25856-K1405-K003
KA 1400
capacitor 2200 uF siemens
gto 2400
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SP*02N60
Abstract: P-TO252 SPD02N60 SPU02N60
Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified
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SPD02N60
SPU02N60
P-TO252
P-TO251
Q67040-S4133
Q67040-S4127-A2
SP*02N60
P-TO252
SPD02N60
SPU02N60
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SPU30N03L
Abstract: No abstract text available
Text: SPD30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.012 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated
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SPD30N03L
P-TO252
Q67040-S4148-A2
SPU30N03L
P-TO251-3-1
Q67040-S4149-A2
SPU30N03L
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SPP80N03L
Abstract: No abstract text available
Text: SPP80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.006 Ω • Avalanche rated Continuous drain current ID 30 V 80 A • Logic Level • dv/dt rated
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SPP80N03L
P-TO220-3-1
Q67040-S4735-A2
SPB80N03L
P-TO263-3-2
Q67040-S4735-A3
SPP80N03L
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SPB80N03
Abstract: SPP80N03 4520C
Text: SPP80N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.006 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 80 A • dv/dt rated • 175°C operating temperature
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SPP80N03
P-TO220-3-1
Q67040-S4734-A2
SPB80N03
P-TO263-3-2
Q67040-S4734-A3
SPB80N03
SPP80N03
4520C
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yamaha ic
Abstract: T5013 T5012 T5011 T5015 T7250 T7254 sgs 841 emc 8100
Text: ISDN S-INTERFACE MODULES Through-Hole, Dual, 1500 Vrms ! W NE Meets the pulse waveform template of CCITT I.430 when recommended module and chip pair are used UL1950 approved to basic isolation Compatible with industry standard footprints Developed for enhanced EMC performance
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UL1950
T5011
T5012
T5013
T5015
yamaha ic
T5013
T5012
T5011
T5015
T7250
T7254
sgs 841
emc 8100
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siemens B43570
Abstract: din 6797 siemens 230 97 surge siemens 230 91
Text: Capacitors with Screw Terminals High-Performance Versions, LL Grade B 43 550 B 43 570 Maximum reliability and long useful life Operating temperature up to 105 °C Construction ● ● ● ● ● Charge-discharge proof, polar Aluminum case with insulating sleeve
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B43570-.
siemens B43570
din 6797
siemens 230 97 surge
siemens 230 91
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siemens ferrite n22 p14
Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Text: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches
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B41306-E7478-T
Abstract: 10000UF 25V ELKO Kondensatoren 4700uf 63v 68 UF 450V B41010-C5478-T 3300uf 350v 6800UF 63V B41306-E8478-T B41538-A7228-M
Text: Partnerschaft mit Siemens RS Components bietet durch eine vertiefte Zusammenarbeit mit Siemens Passive Bauelemente und Röhren eine besondere Dienstleistung an: Als offizieller Schwerpunkthändler liefern wir unseren Kunden alle 2 600 Produkte aus dem Siemens Bauteile Service Katalog SBS-Buch .
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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FR 151 diode
Abstract: SiEMENS PM 350 98 SIMOPAC Module BSM 151 F C67076-A1050-A2 siemens 350 98 BSM151F siemens 350 BSM151 V103 SiEMENS EC 350 98 0
Text: 47E » SIEMENS • ÔEBSbDS SIEMENS DOEbMMI 3 ■ SIE6 AKTI ENGESELLSCHAF - r - 3 cM 5 SIMOPAC Modules Vas I = 500 V 56 A = d Ä D S o n • • • • • • • BSM 151 F BSM 151 FR = 0 .1 1 fl Power module Single switch FREDFET N channel Enhancement mode
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C67076-A1050-A2
C67076-A1056-A2
bsm151f151fr
sim00061
bsm151f
151fr
BSM151
T-39-15
FR 151 diode
SiEMENS PM 350 98
SIMOPAC Module BSM 151 F
C67076-A1050-A2
siemens 350 98
siemens 350
V103
SiEMENS EC 350 98 0
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Untitled
Abstract: No abstract text available
Text: SIEMENS DSR QPSK-Demodulator SOA 631OX Prelim inary Data Bipolar IC Features • • • • • • • • Internal reference voltage source. Autom atic gain control AGC with integrated AGC amplifier. O utput for adjustable delayed tuner AGC. Oscillator circuitry for VCO with external varicaps.
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631OX
P-DSO-20-1
UESMB27
235b05
00b3S7fl
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BSS284
Abstract: marking BSs sot23 siemens
Text: SIEMENS BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Pin 2 Pin 1 G Type Vbs BSS 284 -50 V Type BSS 284 Ordering Code Q62702-S299 b -0.13 A flbS(on} 100 Pin 3 D S Package Marking SOT-23
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OT-23
Q62702-S299
E6327
BSS284
marking BSs sot23 siemens
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Untitled
Abstract: No abstract text available
Text: B 41 507 B 43 507 Capacitors with Solder Pins LL Grade Especially high volumetric efficiency Construction • Charge-discharge proof, polar • Aluminum case, fully insulated • Overload protection by preset break point in case • Solder pin mounting on printed circuit boards,
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KAL0273-2
0235bOS
KAL0151-Z
G0742b4
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PDF
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B41588 siemens capacitor
Abstract: SIEMENS capacitor axial b41588 siemens matsua b41588 B41588-D7476-T B41588-C9106-T B41588-D7108-T B43588-E4226-T B43588-D2107-T B43588-C2106-T B41588-J8226-T
Text: Aluminum Electrolytic C a p a c ito rs Capacitor with axial leads Long-life grade For professional equipment in industrial electronics At case with insulating sleeve Welded terminals ensure reliable contacting Operation up to 105 "C 1 permissible Rated voltage VR
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B43588-C2106-T
B43588-M2476-T
B43588-D2107-T
B43588-C4475-T
B43588-D4106-T
B43588-E4226-T
B43588-D4476-T
B41588 siemens capacitor
SIEMENS capacitor axial b41588
siemens matsua b41588
B41588-D7476-T
B41588-C9106-T
B41588-D7108-T
B41588-J8226-T
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BFQ transistors
Abstract: BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B
Text: T-3 I"Oí SIE M EN S A K T I E N G E S E L L S C H A F 47E D • ñ 2 3 S bQ S G Ü 5 b 57 ô 2 « S I E G HF-Bipolar-Transistoren / RF Bipolar Transistors Metal Ceramic Package NPN ID (II B B □ B □ 'c P,o. h V mA mW GHz dB BFQ 57 BFQ 58 16 16 35 30
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fi23SbQS
GD5b57fl
O-117
BFQ transistors
BFQ transistors 98
BFQ 58
BFQ57
BFQ196
bfq58
b20200
bfq59
siemens 350 98
5925B
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transistor 21789
Abstract: 0965 TRANSISTOR ATC 1595
Text: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface
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SH100G
Abstract: TDK tda
Text: SIEMENS CDR 3300-00 High-Speed Clock and Data Recovery Bipolar 1C Preliminary Data Features • • • • • • Data rate from 2.5 to 3.3 Gbit/s Supply range fro m -4 .0 V t o - 5 . 0 V Supply current 350 mA typ. Input sensitivity 20 mVpp differential BER = 10“ 12
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SH100G-based
19Q8-Dfi-1Fi
STM-16
P-TQFP-100-4
SH100G
TDK tda
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S498
Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e
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023SbOS
lSb37
Q62702-
BSS981'
BSS1381Â
OT-23
BSS3951Â
O-202
BSS100
BSS123
S498
BSS97
BSS95
BSS125
siemens 230 92
BSS 130
BSS 97
s484
S458
BSS components
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