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    SPD03N60S5 Price and Stock

    Rochester Electronics LLC SPD03N60S5BTMA1

    MOSFET N-CH 600V 3.2A TO252-3
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    DigiKey SPD03N60S5BTMA1 Bulk 9,500 562
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    Infineon Technologies AG SPD03N60S5BTMA1

    MOSFET N-CH 600V 3.2A TO252-3
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    SPD03N60S5BTMA1 Digi-Reel 1
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    Avnet Americas SPD03N60S5BTMA1 Reel 4 Weeks 676
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    Rochester Electronics SPD03N60S5BTMA1 9,500 1
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    Infineon Technologies AG SPD03N60S5

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    Bristol Electronics SPD03N60S5 2,095 5
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    Quest Components SPD03N60S5 14,880
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    SPD03N60S5 1,676
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    SPD03N60S5 218
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    SPD03N60S5 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPD03N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=1.40 ?, 3.2A Original PDF
    SPD03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD03N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 1,400.0 mOhm; ID(max) @ TC=25°C: 3.2 A; IDpuls (max): 5.7 A; Original PDF
    SPD03N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD03N60S5BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 3.2A TO-252 Original PDF

    SPD03N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    03n60s5

    Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5

    03n60s5

    Abstract: transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5 03n60s5 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    03N60S5

    Abstract: SPD03N60S5 P-TO251-3-1 P-TO252 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 SPU03N60S5 P-TO251-3-1 P-TO252 03N60S5 Q67040-S4227 03N60S5 SPD03N60S5 P-TO251-3-1 P-TO252

    03n60s5

    Abstract: Q67040-S4227 TRANSISTOR SMD MARKING CODE 2A TO252 rthjc SPD03N60S5 SPU03N60S5 03n60 Q67040-S4187 SPU03N
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5 03n60s5 Q67040-S4227 TRANSISTOR SMD MARKING CODE 2A TO252 rthjc SPD03N60S5 SPU03N60S5 03n60 Q67040-S4187 SPU03N

    03n60s5

    Abstract: smd diode marking code 2a
    Text: SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 P-TO251-3-1 P-TO252 03N60S5 03N60S5 Q67040-S4227 Q67040-S4187 smd diode marking code 2a

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 1.4 Ω • Optimized capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    03n60s5

    Abstract: SPU03N60S5 P-TO251-3-1 P-TO252 SPD03N60S5
    Text: SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 SPU03N60S5 P-TO251-3-1 P-TO252 SPD03N60S5

    03n60s5

    Abstract: MSL3 for infineon
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5 MSL3 for infineon

    03n60s5

    Abstract: d marking code dpak transistor P-TO252 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252. P-TO251. Q67040-S4227 03N60S5 03n60s5 d marking code dpak transistor P-TO252 SPD03N60S5 SPU03N60S5

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    3N60

    Abstract: No abstract text available
    Text: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .


    Original     		PDF IPS102 IPS102 1290-B AADS00002/AA605M 3N60

    IPS15HI

    Abstract: Q817C
    Text: IN-PLUG IPS1 5 H Datasheet – Rev.10 – Hiccup flyback Cont® r oller – Easy Opt o Failsaf e Pr ot ect ion IN-PLUG series: IPS1 5 H Enhanced Off-line Swit cher Wit h Hiccup, Low Cost, High Efficiency, Low Stand-By Power. Fail- Saf e Protection from Optocoupler Failure


    Original     		PDF IPS15H IPS15 1290-B IPS15HI Q817C

    Q817C

    Abstract: flyback transformer diagram crt
    Text: Synchronizable Flyback Controller IPS1 6 Pr eliminar y Dat asheet Rev. 2 IN-PLUG series Low Cost, High Efficiency, Low Power Synchronizable Flyback Controller IPS1 6 PRELIMINARY DATASHEET REV2 INTRODUCTION DESCRIPTION The IN-PLUG® IPS16 has been designed for low-cost,


    Original     		PDF IPS16 IPS15 1290-B Q817C flyback transformer diagram crt

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    EE ferrite

    Abstract: No abstract text available
    Text: IN-PLUG IPS1 5 Datasheet – Rev.12 - Low cost, High Efficiency, Low Power off-line Switcher IN-PLUG® series: IPS1 5 Low Cost, High Efficiency, Low Power Enhanced Off-line Switcher – REVISION 12 INTRODUCTION DESCRIPTION The IN-PLUG® IPS15 is an enhanced off-line


    Original     		PDF IPS15 IPS10. IPS10, 1290-B EE ferrite

    IPS15HI

    Abstract: IPS15H 90-265V
    Text: IN-PLUG IPS15H Datasheet – Rev.10 – Hiccup flyback Cont® roller – Easy Opto Failsafe Protection IN-PLUG series: IPS15H Enhanced Off-line Switcher With Hiccup, Low Cost, High Efficiency, Low Stand-By Power. Fail-Safe Protection from Optocoupler Failure


    Original     		PDF IPS15H IPS15H IPS15 1290-B IPS15HI 90-265V

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		PDF AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet

    ips 500w circuit diagram

    Abstract: Self-Oscillating Flyback mosfet IPS 4N60 IPS401 marking d26 diode SCHOTTKY IPS15HC Led driver 100W schematic AN-IPS-07 DIODE D28 STD3NB60
    Text: IN-PLUG IPS401 Datasheet - Rev.11 - Universal WHITE LED Controller with 0.5V current FB voltage IN-PLUG® series: IPS401 High Efficiency, High Power Factor, Universal High Brightness WHITE LED Controller – REVISION 11 – INTRODUCTION DESCRIPTION The IPS401 is the world’s first White LED controller


    Original     		PDF IPS401 1290-B ips 500w circuit diagram Self-Oscillating Flyback mosfet IPS 4N60 marking d26 diode SCHOTTKY IPS15HC Led driver 100W schematic AN-IPS-07 DIODE D28 STD3NB60

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    03N60S5

    Abstract: No abstract text available
    Text: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 P-T0251 03N60S5 Q67040-S4227 P-T0252 03N60S5