100C
Abstract: MLP66-40 SiC769 SiC769CD SiC769CD-T1-E3
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769
11-Mar-11
100C
MLP66-40
SiC769
SiC769CD
SiC769CD-T1-E3
|
Untitled
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769
SiC769CD
11-Mar-11
|
MLP66-40
Abstract: Diode Marking LG
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769
SiC769CD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MLP66-40
Diode Marking LG
|
S1-0248
Abstract: D2140
Text: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769CD
18-Jul-08
S1-0248
D2140
|
MLP66-40
Abstract: SiC769CD SiC769CD-T1-E3
Text: New Product SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions
|
Original
|
PDF
|
SiC769CD
18-Jul-08
MLP66-40
SiC769CD-T1-E3
|
SiC769CD
Abstract: 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR
Text: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769CD
18-Jul-08
100C
MLP66-40
SiC769CD-T1-E3
IHLP-5050EZ
SiC769DB
intel drMOS compliant
MOSFET Device Effects on Phase Node Ringing in VR
|
drMOS compatible
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769
SiC769CD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
drMOS compatible
|
Untitled
Abstract: No abstract text available
Text: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
|
Original
|
PDF
|
SiC769
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
MLP66-40
Abstract: SiC769CD sic769cd-t1-e3 MOSFET Device Effects on Phase Node Ringing
Text: New Product SiC769CD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769CD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with
|
Original
|
PDF
|
SiC769CD
18-Jul-08
MLP66-40
sic769cd-t1-e3
MOSFET Device Effects on Phase Node Ringing
|