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    SIA466EDJ Price and Stock

    Vishay Siliconix SIA466EDJ-T1-GE3

    MOSFET N-CH 20V 25A PPAK SC70-6
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    DigiKey SIA466EDJ-T1-GE3 Cut Tape 3,586 1
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    SIA466EDJ-T1-GE3 Reel 3,000 3,000
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    SIA466EDJ-T1-GE3 Digi-Reel 1
    • 1 $0.65
    • 10 $0.563
    • 100 $0.3897
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    Vishay Intertechnologies SIA466EDJ-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA466EDJ-T1-GE3)
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    Avnet Americas SIA466EDJ-T1-GE3 Reel 8 Weeks 3,000
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    Mouser Electronics SIA466EDJ-T1-GE3 1,735
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    Verical SIA466EDJ-T1-GE3 2,980 66
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    SIA466EDJ-T1-GE3 2,542 26
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    Arrow Electronics SIA466EDJ-T1-GE3 Cut Strips 2,542 8 Weeks 1
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    Newark SIA466EDJ-T1-GE3 Cut Tape 3,093 1
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    SIA466EDJ-T1-GE3 Reel 3,000
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    SIA466EDJ-T1-GE3 Cut Tape 3,000
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    Bristol Electronics SIA466EDJ-T1-GE3 49,436
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    Quest Components SIA466EDJ-T1-GE3 39,548
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    SIA466EDJ-T1-GE3 1,804
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    TTI SIA466EDJ-T1-GE3 Reel 3,000
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    TME SIA466EDJ-T1-GE3 3,000
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    Chip1Stop SIA466EDJ-T1-GE3 Cut Tape 2,980
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    EBV Elektronik SIA466EDJ-T1-GE3 9 Weeks 3,000
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    Vishay BLH SIA466EDJ-T1-GE3

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    Bristol Electronics SIA466EDJ-T1-GE3 2,255 7
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    SIA466EDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIA466EDJ-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 25A SC-70-6 Original PDF

    SIA466EDJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiA466EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA466EDJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiA466EDJ AN609, 7780u 9753u 0133m 8929u 8577m 9534m 03-Mar-14

    Untitled

    Abstract: No abstract text available
    Text: SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.0095 at VGS = 10 V 25 0.0111 at VGS = 6 V 25 0.0130 at VGS = 4.5 V 25 VDS (V) 20 Qg (TYP.) 6.3 nC S 4 05 2. m m m 3 G Bottom View 5m


    Original     		PDF SiA466EDJ SC-70 SC-70-6L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / February 2015 Author: Kim Norton Tel: 1 408-970-5300 E-mail: kim.norton@vishay.com 20 V N-Channel MOSFET With Industry-High 25 A Continuous Drain Current and 2500 V ESD Protection in 2 mm by 2 mm Footprint Area Product Benefits:


    Original     		PDF SC-70 SiA466EDJ