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    Skyworks Solutions Inc SI8946BD-IS4R

    POWER ISOLATION
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    DigiKey SI8946BD-IS4R Reel 1,250 1,250
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    Skyworks Solutions Inc SI8921BD-IS4R

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    DigiKey SI8921BD-IS4R Cut Tape 750 1
    • 1 $6.42
    • 10 $5.769
    • 100 $4.7268
    • 1000 $4.02384
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    Mouser Electronics SI8921BD-IS4R 1,641
    • 1 $6.42
    • 10 $5.46
    • 100 $4.73
    • 1000 $4.03
    • 10000 $3.39
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    Rochester Electronics SI8921BD-IS4R 4,940 1
    • 1 $4.03
    • 10 $4.03
    • 100 $3.78
    • 1000 $3.42
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    Richardson RFPD SI8921BD-IS4R 1
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    Skyworks Solutions Inc SI8922BD-IS4

    POWER ISOLATION
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    DigiKey SI8922BD-IS4 Tube 454 1
    • 1 $6.42
    • 10 $5.769
    • 100 $4.72675
    • 1000 $4.02384
    • 10000 $3.22392
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    Skyworks Solutions Inc SI8920AC-IS

    IC ISOLATION 16SOIC
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    DigiKey SI8920AC-IS Tube 364 1
    • 1 $5.34
    • 10 $4.827
    • 100 $4.60217
    • 1000 $3.95243
    • 10000 $3.95243
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    Skyworks Solutions Inc SI8935D-IS4

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    DigiKey SI8935D-IS4 Tube 313 1
    • 1 $6.35
    • 10 $5.733
    • 100 $4.74625
    • 1000 $4.13293
    • 10000 $3.46632
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    Find more SI89 price and stock on Findchips.com

    SI89 Datasheets (144)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8900B-A01-GS Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC Original PDF
    SI8900B-A01-GSR Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC Original PDF
    SI8900D-A01-GS Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC Original PDF
    SI8900D-A01-GSR Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC Original PDF
    Si8900EDB Vishay Intertechnology Bi-Directional N-Channel 20-V (D-S) MOSFET Original PDF
    SI8900EDB Vishay Siliconix MOSFETs Original PDF
    Si8900EDB Vishay Telefunken Bi-directional N-channel 20-v (d-s) Mosfet Original PDF
    SI8900EDB-T2-E1 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.4A 10-MFP Original PDF
    SI-8900L Sanken Electric Separate Excitation Switching Type with Transformer Original PDF
    SI8901A Siliconix DMOS Double Balanced Mixers Scan PDF
    SI8901B-A01-GS Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901B-A01-GSR Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901B-A02-GS Silicon Laboratories IC ADC 10BIT SAR 16SOIC Original PDF
    SI8901B-A02-GSR Silicon Laboratories IC ADC 10BIT SAR 16SOIC Original PDF
    SI8901CY Siliconix DMOS Double Balanced Mixers Scan PDF
    SI8901D-A01-GS Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901D-A01-GSR Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901D-A02-GS Silicon Laboratories IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901D-A02-GSR Silicon Laboratories IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901EDB Vishay Siliconix MOSFETs Original PDF
    ...

    SI89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8900E

    Abstract: J-STD-020A Si8900EDB sn 4060
    Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V


    Original     		PDF Si8900EDB S-21474--Rev. 26-Aug-02 8900E J-STD-020A sn 4060

    10-SPROCKET

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B 1.75  0.10 B 5.50  0.05 12.0 +0.30 -0.10 SECTION A-A A SECTION B-B NOTES: 1. 10-sprocket hole pitch cumulative tolerance 0.2.


    Original     		PDF 275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-04476--Rev. 30-Aug-04

    Si8904EDB

    Abstract: No abstract text available
    Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 18-Jul-08

    c 5706

    Abstract: AN609 Si8900EDB
    Text: Si8900EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8900EDB AN609 08-Aug-07 c 5706

    Si8902EDB-T2-E1

    Abstract: Si8902EDB t2 955 e S8304
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304

    SI8407DB

    Abstract: 8902E Si8902EDB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E


    Original     		PDF Si8407DB Si8902EDB 275-mm 8902E 8902E

    7009 A 8290

    Abstract: SI8901 AN609 Si8901EDB
    Text: Si8901EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8901EDB AN609 08-Aug-07 7009 A 8290 SI8901

    8902E

    Abstract: J-STD-020A Si8902EDB
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8900EDB

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B


    Original     		PDF 275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-02077--Rev. 13-May-02 93-5224-x Si8900EDB

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04

    SI8901EDB

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		PDF Si8901EDB 8901E 8901E Si8901EDB-T2Note 63Sn/37Pb S-40852--Rev. 03-May-04

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02

    si8900

    Abstract: AN-635
    Text: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5


    Original     		PDF Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 si8900 AN-635

    Untitled

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 3: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00 0.10 4.00 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 0.05 B 1.75 0.10 B 5.50 0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.


    Original     		PDF Si8407DB-T2 Si8902EDB-T2 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5223-X 11-Oct-10

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V D-S MOSFET FEATURES PRODUCT SUMMARY 24 • TrenchFET power MOSFET RS1S2 (Ω) Max. IS1S2 (A) a 0.028 at VGS = 4.5 V 5.9 • Small 2.4 mm x 1.6 mm outline 0.029 at VGS = 3.7 V 5.8 • Thin 0.6 mm max. height


    Original     		PDF Si8902AEDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    J-STD-020A

    Abstract: Si8902EDB
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A

    Si8902EDB

    Abstract: J-STD-020A
    Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E Si8901EDB-T2-E1 11-Mar-11

    SI8901

    Abstract: J-STD-020A Si8901EDB
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		PDF Si8901EDB 8901E S-50066--Rev. 17-Jan-05 SI8901 J-STD-020A

    J-STD-020A

    Abstract: Si8904EDB
    Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E P/N340 S-50066--Rev. 17-Jan-05 J-STD-020A