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    SI8816EDB Price and Stock

    Vishay Siliconix SI8816EDB-T2-E1

    MOSFET N-CH 30V 4MICROFOOT
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    DigiKey SI8816EDB-T2-E1 Digi-Reel 4,753 1
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    SI8816EDB-T2-E1 Reel 3,000 3,000
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    Vishay Intertechnologies SI8816EDB-T2-E1

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8816EDB-T2-E1)
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    Avnet Americas SI8816EDB-T2-E1 Reel 6 Weeks 3,000
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    Mouser Electronics SI8816EDB-T2-E1 11,279
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    Verical SI8816EDB-T2-E1 6,000 3,000
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    SI8816EDB-T2-E1 2,945 53
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    Arrow Electronics SI8816EDB-T2-E1 6,000 6 Weeks 3,000
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    SI8816EDB-T2-E1 Cut Strips 2,945 12 Weeks 1
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    Newark SI8816EDB-T2-E1 Reel 3,000
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    TTI SI8816EDB-T2-E1 Reel 3,000
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    EBV Elektronik SI8816EDB-T2-E1 7 Weeks 3,000
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    Vishay Intertechnologies SI8816EDB-T2-E1-A

    VISSI8816EDB-T2-E1-A N-CHANNEL 30-V (D-S (Alt: SI8816EDB-T2-E1-A)
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    Avnet Asia SI8816EDB-T2-E1-A 8 Weeks 3,000
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    SI8816EDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8816EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V MICRO FOOT Original PDF

    SI8816EDB Datasheets Context Search

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    SI8816EDB

    Abstract: No abstract text available
    Text: Si8816EDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A) a 0.109 at VGS = 10 V 2.3 0.116 at VGS = 4.5 V 2.3 0.123 at VGS = 3.7 V 2.2 0.142 at VGS = 2.5 V 2.0 VDS (V) 30 MICRO FOOT 0.8 x 0.8 S


    Original     		PDF Si8816EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8816EDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8816EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI8816EDB

    Abstract: No abstract text available
    Text: Si8816EDB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.109 at VGS = 10 V 2.3 0.116 at VGS = 4.5 V 2.3 0.123 at VGS = 3.7 V 2.2 0.142 at VGS = 2.5 V 2.0 • • • • • Qg (Typ.) 2.4 nC APPLICATIONS


    Original     		PDF Si8816EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8816EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8816EDB AN609, 6881u 1308u 0726m 3566u 8911m 8092m 7026m 28-Feb-13

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402