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    SI8810EDB Price and Stock

    Vishay Siliconix SI8810EDB-T2-E1

    MOSFET N-CH 20V 2.1A MICROFOOT
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    DigiKey SI8810EDB-T2-E1 Reel 6,000 3,000
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    SI8810EDB-T2-E1 Cut Tape 2,542 1
    • 1 $0.47
    • 10 $0.364
    • 100 $0.2182
    • 1000 $0.13736
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    SI8810EDB-T2-E1 Digi-Reel 1
    • 1 $0.47
    • 10 $0.364
    • 100 $0.2182
    • 1000 $0.13736
    • 10000 $0.13736
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    Vishay Intertechnologies SI8810EDB-T2-E1

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8810EDB-T2-E1)
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    Avnet Americas SI8810EDB-T2-E1 Reel 19 Weeks 3,000
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    Mouser Electronics SI8810EDB-T2-E1 32,393
    • 1 $0.47
    • 10 $0.38
    • 100 $0.243
    • 1000 $0.146
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    TTI SI8810EDB-T2-E1 Reel 6,000 3,000
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    Chip 1 Exchange SI8810EDB-T2-E1 3,482
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    EBV Elektronik SI8810EDB-T2-E1 7 Weeks 3,000
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    SI8810EDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8810EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.1A MICROFOOT Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Si8810EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.072 at VGS = 4.5 V 2.9 VDS (V) 20 0.079 at VGS = 2.5 V 2.8 0.092 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 • • • • • Qg (Typ.) 3 nC TrenchFET Power MOSFET


    Original     		PDF Si8810EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.072 at VGS = 4.5 V 2.9 0.079 at VGS = 2.5 V 2.8 0.092 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 VDS (V) 20 MICRO FOOT 0.8 x 0.8


    Original     		PDF Si8810EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8810EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8810EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8810EDB AN609, 9514u 8193u 0736m 9495u 7930m 8018m 4360m 09-Jan-13

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402