Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI8404DB Search Results

    SF Impression Pixel

    SI8404DB Price and Stock

    Vishay Siliconix SI8404DB-T1-E1

    MOSFET N-CH 8V 12.2A 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8404DB-T1-E1 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.33815
    		Buy Now

    SI8404DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8404DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V 12.2A 2X2 4-MFP Original PDF

    SI8404DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


    Original     		PDF Si8404DB Si8404DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8404DB

    Abstract: s8404
    Text: Si8404DB Vishay Siliconix New Product N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 @ VGS = 4.5 V 12.2 0.033 @ VGS = 2.5 V 11.6 0.035 @ VGS = 1.8 V 11.2 0.043 @ VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ) • TrenchFET Power MOSFET


    Original     		PDF Si8404DB S-52060 03-Oct-05 s8404

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


    Original     		PDF Si8404DB 18-Jul-08

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix New Product N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 @ VGS = 4.5 V 12.2 0.033 @ VGS = 2.5 V 11.6 0.035 @ VGS = 1.8 V 11.2 0.043 @ VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ) • TrenchFET Power MOSFET


    Original     		PDF Si8404DB 08-Apr-05

    4614 mosfet

    Abstract: 8243 MOSFET 4614 AN609 Si8404DB 13008M
    Text: Si8404DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8404DB AN609 19-Dec-07 4614 mosfet 8243 MOSFET 4614 13008M

    74124

    Abstract: Si8404DB 74124 application note 184 324 DIODE si84
    Text: SPICE Device Model Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8404DB S-52633Rev. 02-Jan-06 74124 74124 application note 184 324 DIODE si84

    TR 610

    Abstract: Si8404DB si8404
    Text: Si8404DB Vishay Siliconix New Product N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ) • TrenchFET Power MOSFET


    Original     		PDF Si8404DB 08-Apr-05 TR 610 si8404

    74124

    Abstract: Si8404DB
    Text: SPICE Device Model Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8404DB 18-Jul-08 74124

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


    Original     		PDF Si8404DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si8404DB

    Abstract: No abstract text available
    Text: Si8404DB Vishay Siliconix N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ.) • TrenchFET Power MOSFET • Industry First 1.5 V Rated MOSFET


    Original     		PDF Si8404DB Si8404DB-T1-E1 11-Mar-11

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    SC-89-6

    Abstract: SiB914
    Text: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry


    Original     		PDF VMN-PT0103-0802 SC-89-6 SiB914