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Vishay Siliconix SI7882DP-T1-E3 MOSFET N-CH 12V 13A PPAK SO-8
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DigiKey	SI7882DP-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI7882DP-T1-GE3 MOSFET N-CH 12V 13A PPAK SO-8
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DigiKey	SI7882DP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI7882DP-T1-E3
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Bristol Electronics	SI7882DP-T1-E3		289			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI7882DPT1E3 N-CHANNEL REDUCED QG, FAST SWITCHING MOSFET Power Field-Effect Transistor, 13A I(D), 12V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	SI7882DPT1E3		990			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SI7882DP-T1-E3 MOSFET N-CH 12V 13A PPAK SO-8 / Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R
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Win Source Electronics	SI7882DP-T1-E3		26,620			1 - 10 - 100 $0.848 1000 $0.566 10000 $0.566	Buy Now

SI7882DP Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
Si7882DP	Vishay Intertechnology	N-Channel Reduced Q g , Fast Switching MOSFET	Original	PDF
SI7882DP	Vishay Siliconix	MOSFETs	Original	PDF
Si7882DP SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI7882DP-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 13A PPAK 8SOIC	Original	PDF
SI7882DP-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 13A PPAK 8SOIC	Original	PDF

SI7882DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si7882DP Abstract: No abstract text available Text: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7882DP 16-May-02	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY VDS V 12	Original	Si7882DP 07-mm 500-kHz Si7882DP-T1 08-Apr-05	PDF
SI7882DP-T1-E3 Abstract: Si7882DP Si7882DP-T1 Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile	Original	Si7882DP 500-kHz Si7882DP-T1 Si7882DP-T1-E3 S-61086-Rev. 19-Jun-06	PDF
Untitled Abstract: No abstract text available Text: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)	Original	Si7882DP 07-mm 500-kHz S-20803--Rev. 17-Jun-02	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down	Original	Si7882DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)	Original	Si7882DP 07-mm 500-kHz S-20476--Rev. 22-Apr-02	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile	Original	Si7882DP 500-kHz Si7882DP-T1 Si7882DP-T1-E3 08-Apr-05	PDF
Si7882DP Abstract: No abstract text available Text: Si7882DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 12 rDS(on) (W)	Original	Si7882DP 07-mm 500-kHz S-21194--Rev. 29-Ju1-02	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down	Original	Si7882DP Si7882DP-T1 Si7882DP-T1-E3 Si7882DP-T1-GE3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down	Original	Si7882DP Si7882DP-T1 Si7882DP-T1-E3 Si7882DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si7882DP Abstract: Si7882DP-T1 Si7882DP-T1-E3 Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down	Original	Si7882DP Si7882Dlectual 18-Jul-08 Si7882DP-T1 Si7882DP-T1-E3	PDF
Si7882DP Abstract: Si7882DP-T1 Si7882DP-T1-E3 Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down	Original	Si7882DP Si7882D 11-Mar-11 Si7882DP-T1 Si7882DP-T1-E3	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 PowerPAK SO-8 RoHS* COMPLIANT • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down	Original	Si7882DP Si7882DP-T1 Si7882DP-T1-E3 Si7882DP-T1-GE3 11-Mar-11	PDF
Si7882DP Abstract: No abstract text available Text: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7882DP S-60409Rev. 20-Mar-06	PDF

Si7882DP Abstract: No abstract text available Text: SPICE Device Model Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7882DP 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile	Original	Si7882DP 500-kHz Si7882DP-T1 Si7882DP-T1-E3 08-Apr-05	PDF
Si7882DP Abstract: Si7882DP-T1 Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY VDS V 12	Original	Si7882DP 07-mm 500-kHz Si7882DP-T1 S-31727--Rev. 18-Aug-03	PDF
Untitled Abstract: No abstract text available Text: Si7882DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 22 0.008 at VGS = 2.5 V 18 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile	Original	Si7882DP 07-mm 500-kHz Si7882DP-T1 Si7882DP-T1--E3 08-Apr-05	PDF
smd transistor M21 Abstract: 4607 n-channel Text: SC4607 Very Low Input, MHz Operation, High Efficiency Synchronous Buck POWER MANAGEMENT Description Features The SC4607 is a voltage mode step down buck regulator controller that provides accurate high efficiency power conversion from an input supply range of 2.25V to 5.5V.	Original	SC4607 smd transistor M21 4607 n-channel	PDF
TRANSISTOR C 6090 npn Abstract: TRANSISTOR C 6090 FZ 87 1500 6.3V ADP1621 transistor irf 649 21605 lcd driver bh510 6TPE150M rubycon 100v 22uf IRF7470 Text: Constant-Frequency, Current-Mode Step-Up DC/DC Controller ADP1621 FEATURES TYPICAL APPLICATION CIRCUIT VIN = 3.3V L1 4.7µH VOUT = 5V 1A D1 C3 1µF 10V C4 0.1µF 10V IN PIN R1 35.7kΩ 1% RS 80Ω CS ADP1621 SDSN GATE COMP C2 120pF RCOMP 9.09kΩ CCOMP 1.8nF	Original	ADP1621 120pF 600kHz GRM31CR60J476M 6TPE150M FDV0630-4R7M MO-187-BA 10-Lead RM-10) TRANSISTOR C 6090 npn TRANSISTOR C 6090 FZ 87 1500 6.3V ADP1621 transistor irf 649 21605 lcd driver bh510 6TPE150M rubycon 100v 22uf IRF7470	PDF
transistor irf 649 Abstract: ADP1621 BH510-1006 50-ZL-220-M-10 FZ 89 1500 6.3V Text: FEATURES TYPICAL APPLICATION CIRCUIT VIN = 3.3V L1 4.7µH C3 1µF 10V C4 0.1µF 10V IN R1 35.7kΩ 1% RS 80Ω ADP1621 SDSN GATE COMP C2 120pF RCOMP 9.09kΩ CCOMP 1.8nF M1 COUT1 1µF 10V COUT2 10µF 10V R2 11.5kΩ 1% COUT3 150µF 6.3V x2 PGND FREQ FB GND	Original	91709-A MO-187-BA 10-Lead RM-10) ADP1621ARMZ-R7 ADP1621-EVAL RM-10 ADP1621 D06090-0-6/12 transistor irf 649 BH510-1006 50-ZL-220-M-10 FZ 89 1500 6.3V	PDF
71917 Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller	Original	AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds	PDF
CS15 Abstract: SC2441A SC2441ATETRT TSSOP-28 c25 mosfet Text: SC2441A 1.8V to 20V Input 2-Phase Synchronous Step-down Controllers with Step-up Converter POWER MANAGEMENT Description Features The SC2441A is a programmable frequency dual independent or dual/multiple phase single output peak current-mode step-down switching regulator controller. It	Original	SC2441A SC2441A MO-153, TSSOP-28 CS15 SC2441ATETRT TSSOP-28 c25 mosfet	PDF
marking mv sot23 mosfet Abstract: sot 26 Dual N-Channel MOSFET 1.5V to 012V dc dc boost converter Text: LTC3836 Dual 2-Phase, No RSENSETM Low VIN Synchronous Controller FEATURES DESCRIPTION n The LTC 3836 is a 2-phase dual output synchronous step-down switching regulator controller with tracking that drives external N-channel power MOSFETs using few external components. The constant-frequency current	Original	LTC3836 16-Lead 10-Lead LTC3809/LTC3809-1 LTC3822 LTC3822-1 3836fb marking mv sot23 mosfet sot 26 Dual N-Channel MOSFET 1.5V to 012V dc dc boost converter	PDF

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SI7882DP Price and Stock

Vishay Siliconix SI7882DP-T1-E3

Vishay Siliconix SI7882DP-T1-GE3

Vishay Intertechnologies SI7882DP-T1-E3

Vishay Intertechnologies SI7882DPT1E3

Vishay Huntington SI7882DP-T1-E3

SI7882DP Datasheets (5)

SI7882DP Datasheets Context Search

Si7882DP

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SI7882DP-T1-E3

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Si7882DP

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Si7882DP

Si7882DP

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Si7882DP

Si7882DP

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Si7882DP

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smd transistor M21

TRANSISTOR C 6090 npn

transistor irf 649

71917

CS15

marking mv sot23 mosfet