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    SI7850DP Price and Stock

    Vishay Siliconix SI7850DP-T1-E3

    MOSFET N-CH 60V 6.2A PPAK SO-8
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    DigiKey SI7850DP-T1-E3 Cut Tape 11,296 1
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    SI7850DP-T1-E3 Digi-Reel 11,296 1
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    SI7850DP-T1-E3 Reel 11,000 3,000
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    RS SI7850DP-T1-E3 Bulk 2,605 3 Weeks 1
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    ES Components SI7850DP-T1-E3
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    New Advantage Corporation SI7850DP-T1-E3 102,000 1
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    Vishay Siliconix SI7850DP-T1-GE3

    MOSFET N-CH 60V 6.2A PPAK SO-8
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    DigiKey SI7850DP-T1-GE3 Cut Tape 4,821 1
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    SI7850DP-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SI7850DP-T1-GE3 12,000 1
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    Vishay Intertechnologies SI7850DP-T1-GE3

    N-CH 60-V (D-S) FAST SWITCHING MOSFET - Tape and Reel (Alt: SI7850DP-T1-GE3)
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    Avnet Americas SI7850DP-T1-GE3 Reel 6,000 13 Weeks 3,000
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    SI7850DP-T1-GE3 Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics SI7850DP-T1-GE3 6,467
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    Newark SI7850DP-T1-GE3 Cut Tape 30 1
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    SI7850DP-T1-GE3 Reel 3,000
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    TTI SI7850DP-T1-GE3 Reel 24,000 3,000
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    TME SI7850DP-T1-GE3 2,991 1
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    Chip 1 Exchange SI7850DP-T1-GE3 10
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    Chip-Germany GmbH SI7850DP-T1-GE3 235
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    EBV Elektronik SI7850DP-T1-GE3 14 Weeks 3,000
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    Vishay Intertechnologies SI7850DP-T1-E3

    N-CH 60-V (D-S) FAST SWITCHING MOSFET - Tape and Reel (Alt: SI7850DP-T1-E3)
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    Avnet Americas SI7850DP-T1-E3 Reel 13 Weeks 3,000
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    Mouser Electronics SI7850DP-T1-E3 4,110
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    Newark SI7850DP-T1-E3 Reel 3,000
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    SI7850DP-T1-E3 Cut Tape 5
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    Bristol Electronics SI7850DP-T1-E3 4,022
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    Quest Components SI7850DP-T1-E3 2,368
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    SI7850DP-T1-E3 519
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    TTI SI7850DP-T1-E3 Reel 45,000 3,000
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    SI7850DP-T1-E3 Cut Tape 10
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    Avnet Asia SI7850DP-T1-E3 15 Weeks 3,000
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    EBV Elektronik SI7850DP-T1-E3 14 Weeks 3,000
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    Vishay Intertechnologies SI7850DP-T1-E3.

    Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.8W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7850DP-T1-E3.
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    Newark SI7850DP-T1-E3. Reel 3,000
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    SI7850DP Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si7850DP Vishay Intertechnology N-Channel 60-V (D-S) Fast Switching MOSFET Original PDF
    SI7850DP Vishay Siliconix MOSFETs Original PDF
    SI7850DP Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET Original PDF
    SI7850DP Vishay Siliconix MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:6.2A; Resistance, Rds on:0.031R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate n-channel:27nC; Current, Idm pulse:40A; Depth, external:5.26mm; RoHS Compliant: Yes Original PDF
    Si7850DP SPICE Device Model Vishay N-Channel 60-V (D-S) Fast Switching MOSFET Original PDF
    SI7850DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 6.2A PPAK 8SOIC Original PDF
    SI7850DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 6.2A 8-SOIC Original PDF

    SI7850DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original
    Si7850DP Si7850DP-T1-E3 Si7850DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    103A

    Abstract: Si7850DP
    Text: SPICE Device Model Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si7850DP 0-to-10V 25-Jun-02 103A PDF

    Si7850DP

    Abstract: Si7850DP-T1 SI7850DP-T1-E3
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm


    Original
    Si7850DP 07-mm Si7850DP-T1 Si7850DP-T1--E3 SI7850DP-T1-E3 PDF

    Si7850DP

    Abstract: NS1250
    Text: SPICE Device Model Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si7850DP S-60244Rev. 20-Feb-06 NS1250 PDF

    SI7850DP

    Abstract: Si7850DP-T1
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10.3 0.031 @ VGS = 4.5 V 8.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile


    Original
    Si7850DP 07-mm Si7850DP-T1 S-31727--Rev. 18-Aug-03 PDF

    SI7850DP-T1-E3

    Abstract: SI7850DP-T1-GE3 Si7850DP
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original
    Si7850DP Si7850DP-T1-E3 Si7850DP-T1-GE3 18-Jul-08 PDF

    60977

    Abstract: AN609 Si7850DP 85637
    Text: Si7850DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si7850DP AN609 27-Jul-07 60977 85637 PDF

    Si7850DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si7850DP 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original
    Si7850DP Si7850DP-T1-E3 Si7850DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7850DP-T1-GE3

    Abstract: Si7850DP Si7850DP-T1-E3
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original
    Si7850DP Si7850DP-T1-E3 Si7850DP-T1-GE3 11-Mar-11 PDF

    Si7850DP

    Abstract: No abstract text available
    Text: Si7850DP New Product Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10.3 0.031 @ VGS = 4.5 V 8.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original
    Si7850DP 07-mm S-03828--Rev. 28-May-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original
    Si7850DP Si7850DP-T1-E3 Si7850DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original
    Si7850DP Si7850DP-T1-E3 Si7850DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7850DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si7850DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7850DP

    Abstract: Si7850DP-T1
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm


    Original
    Si7850DP 07-mm Si7850DP-T1 Si7850DP-T1--E3 08-Apr-05 PDF

    all mosfet equivalent s

    Abstract: No abstract text available
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original
    Si7850DP Si7850DP-T1-E3 Si7850DP-T1-GE3 11-Mar-11 all mosfet equivalent s PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10.3 0.031 @ VGS = 4.5 V 8.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Available


    Original
    Si7850DP 07-mm Si7850DP-T1 Si7850DP-T1--E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7850DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10.3 0.031 @ VGS = 4.5 V 8.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Available


    Original
    Si7850DP 07-mm Si7850DP-T1 Si7850DP-T1--E3 S-50695--Rev. 18-Apr-05 PDF

    30015614

    Abstract: No abstract text available
    Text: LM25116 LM25116 Wide Range Synchronous Buck Controller Literature Number: SNVS509C LM25116 Wide Range Synchronous Buck Controller General Description Features The LM25116 is a synchronous buck controller intended for step-down regulator applications from a high voltage or widely


    Original
    LM25116 LM25116 SNVS509C 30015614 PDF

    application thermistor ntc 10k

    Abstract: BY590 Siliconix Catalog
    Text: LT3760 8-Channel x 100mA LED Driver Description Features The LT 3760 is an 8-channel LED driver with a step-up DC/DC controller capable of driving up to 45V of LEDs. Each channel contains an accurate current sink with ±2% current matching. Channels follow a master programmable


    Original
    100mA, 100mA) 100kHz LT3760 100mA QFN-32 LT3478/LT3478-1 LT3496 750mA, LT3474/LT3474-1 application thermistor ntc 10k BY590 Siliconix Catalog PDF

    4211Q

    Abstract: 4210Q panasonic vfd vf 100 fault
    Text: TPS40210-Q1, TPS40211-Q1 www.ti.com. SLVS861A – AUGUST 2008 – REVISED OCTOBER 2008 4.5-V TO 52-V INPUT, CURRENT-MODE BOOST CONTROLLERS


    Original
    TPS40210-Q1, TPS40211-Q1 SLVS861A 4211Q 4210Q panasonic vfd vf 100 fault PDF

    3845 48V to 12V buck boost converter

    Abstract: ltc 3845 3845 ic 3845 n equivalent VALUE IC PIN CONFIGURATION OF IC 3845 3845 an ic 3845 ic PIN DIAGRAM regulator 48V to 12v ic 3845 REG IC 48V IN 12V 10A OUT ic
    Text: LT3845 High Voltage Synchronous Current Mode Step-Down Controller with Adjustable Operating Frequency DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Voltage Operation: Up to 60V Synchronizable Up to 600kHz Adjustable Constant Frequency: 100kHz to 500kHz


    Original
    LT3845 600kHz 100kHz 500kHz 16-Lead 200kHz LT3800 LT3844 3845 48V to 12V buck boost converter ltc 3845 3845 ic 3845 n equivalent VALUE IC PIN CONFIGURATION OF IC 3845 3845 an ic 3845 ic PIN DIAGRAM regulator 48V to 12v ic 3845 REG IC 48V IN 12V 10A OUT ic PDF

    comprehensive datasheet of 25V Electrolytic capacitor

    Abstract: CRCW0603105J LM5116 LM5116MH LM5116MHX Si7850DP TSSOP-20 TSSOP20-EP 4.5v to 100v input regulator
    Text: LM5116 Wide Range Synchronous Buck Controller General Description Features The LM5116 is a synchronous buck controller intended for step-down regulator applications from a high voltage or widely varying input supply. The control method is based upon current mode control utilizing an emulated current ramp. Current


    Original
    LM5116 LM5116 50kHz comprehensive datasheet of 25V Electrolytic capacitor CRCW0603105J LM5116MH LM5116MHX Si7850DP TSSOP-20 TSSOP20-EP 4.5v to 100v input regulator PDF

    LTC3891

    Abstract: LTC3891EUDC f105k f65k LTC3891IUDC#TRPBF LTC3891EFE LTC3891IUDC LTC3891IUDC#PBF c3891 LTC3891IFE
    Text: LTC3891 Low IQ, 60V Synchronous Step-Down Controller FEATURES n n n n n n n n n n n n n n n n DESCRIPTION Wide VIN Range: 4V to 60V 65V Abs Max Low Operating IQ: 50 A Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 24V RSENSE or DCR Current Sensing Phase-Lockable Frequency (75kHz to 750kHz)


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    LTC3891 75kHz 750kHz) 50kHz 900kHz) Start-10V, 140kHz 650kHz, 100kHz 500kHz, LTC3891 LTC3891EUDC f105k f65k LTC3891IUDC#TRPBF LTC3891EFE LTC3891IUDC LTC3891IUDC#PBF c3891 LTC3891IFE PDF