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    Vishay Siliconix SI7664DP-T1-E3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7664DP-T1-E3 Reel 3,000
    • 1 -
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    • 10000 $1.49076
    		Buy Now

    Vishay Siliconix SI7664DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7664DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.49076
    		Buy Now

    SI7664 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7664DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI7664DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF
    SI7664DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF

    SI7664 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode RL 4B

    Abstract: SI7664DP-T1-E3 TB-17 Si7664DP S-52449-Rev si7664
    Text: Si7664DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 37 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr


    Original     		PDF Si7664DP 07-mm Si7664DP-T1--E3 NOT1000 52449--Rev. 28-Nov-05 Diode RL 4B SI7664DP-T1-E3 TB-17 S-52449-Rev si7664

    SI7664DP-T1-E3

    Abstract: TB-17 Si7664DP si7664
    Text: Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 37 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET RoHS


    Original     		PDF Si7664DP Si7664DP-T1-E3 Si7664DP-T1-GE3 18-Jul-08 TB-17 si7664

    C25B

    Abstract: No abstract text available
    Text: Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 37 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET RoHS


    Original     		PDF Si7664DP Si7664DP-T1-E3 Si7664DP-T1-GE3 08-Apr-05 C25B

    Untitled

    Abstract: No abstract text available
    Text: Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 37 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET RoHS


    Original     		PDF Si7664DP Si7664DP-T1-E3 Si7664DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74149

    Abstract: Si7664DP
    Text: SPICE Device Model Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7664DP 18-Jul-08 74149

    74149

    Abstract: Si7664DP S6018
    Text: SPICE Device Model Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7664DP S-60180Rev. 13-Feb-06 74149 S6018

    73711

    Abstract: 6914 59219 AN609 Si7664DP 12866
    Text: Si7664DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7664DP AN609 10-Jan-06 73711 6914 59219 12866

    Untitled

    Abstract: No abstract text available
    Text: Si7664DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 37 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr


    Original     		PDF Si7664DP 07-mm Si7664DP-T1--E3 08-Apr-05

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS