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    Vishay Siliconix SI7370ADP-T1-GE3

    MOSFET N-CH 60V 50A PPAK SO-8
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    SI7370ADP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7370ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A PPAK 8SOIC Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: New Product Si7370ADP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.010 at VGS = 10 V 16 0.0125 at VGS = 6 V 14.4 VDS (V) 60 Qg (Typ.) 45 • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7370ADP Si7370ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7370ADP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.010 at VGS = 10 V 16 0.0125 at VGS = 6 V 14.4 VDS (V) 60 Qg (Typ.) 45 • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7370ADP Si7370ADP-T1-GE3 11-Mar-11

    01-Sep-08

    Abstract: No abstract text available
    Text: SPICE Device Model Si7370ADP Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7370ADP 18-Jul-08 01-Sep-08

    AN609

    Abstract: No abstract text available
    Text: Si7370ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si7370ADP AN609, 12-Jun-08 AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7370ADP Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7370ADP capaci850 S-82044-Rev. 01-Sep-08

    Si7370ADP-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si7370ADP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.010 at VGS = 10 V 16 0.0125 at VGS = 6 V 14.4 VDS (V) 60 Qg (Typ.) 45 • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7370ADP Si7370ADP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7370ADP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.010 at VGS = 10 V 16 0.0125 at VGS = 6 V 14.4 VDS (V) 60 Qg (Typ.) 45 • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si7370ADP Si7370ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12