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    Vishay Siliconix SI6933DQ-T1-E3

    MOSFET 2P-CH 30V 8TSSOP
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    DigiKey SI6933DQ-T1-E3 Reel 3,000
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    RS SI6933DQ-T1-E3 Bulk 3,000
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    Vishay Siliconix SI6933DQ-T1-E3/BKN

    P-CHAN 30V TRENCH 32M CELL MOSFET D | Siliconix / Vishay SI6933DQ-T1-E3/BKN
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    RS SI6933DQ-T1-E3/BKN Bulk 1
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    Fairchild Semiconductor Corporation SI6933DQ

    3500 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA
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    Quest Components SI6933DQ 1,863
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    Rochester Electronics SI6933DQ 10 1
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    Vishay Siliconix SI6933DQ

    3500 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI6933DQ 29
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    Others SI6933DQ

    AVAILABLE EU
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    ComSIT USA SI6933DQ 2,250
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    SI6933DQ Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6933DQ Fairchild Semiconductor Dual 30V P-Channel PowerTrench MOSFET Original PDF
    Si6933DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6933DQ Vishay Intertechnology Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI6933DQ-DS Vishay Telefunken DS-Spice Model for Si6933DQ Original PDF
    Si6933DQ SPICE Device Model Vishay Dual P-Channel Enhancement-Mode MOSFET Original PDF
    SI6933DQ-T1 Vishay Intertechnology Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI6933DQ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 8-TSSOP Original PDF
    SI6933DQ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 8-TSSOP Original PDF

    SI6933DQ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7483

    Abstract: AN609 Si6933DQ
    Text: Si6933DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6933DQ AN609 10-Jul-07 7483 PDF

    Si6933DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6933DQ 18-Jul-08 PDF

    Si6933DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6933DQ 0-to-10V 12-Oct-01 PDF

    SI6933DQ

    Abstract: No abstract text available
    Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2


    Original     		Si6933DQ Si6933DQ-T1-GE3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D 8 7 6 5 Si6933DQ D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		Si6933DQ S-49538--Rev. 06-Oct-97 PDF

    Si6933DQ

    Abstract: No abstract text available
    Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET


    Original     		Si6933DQ 49538--Rev. 06-Oct-97 PDF

    Si6933DQ

    Abstract: No abstract text available
    Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2


    Original     		Si6933DQ Si6933DQ-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D 8 7 6 5 Si6933DQ D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET


    Original     		Si6933DQ S-49538--Rev. 06-Oct-97 PDF

    2502P

    Abstract: CBHK741B019 F63TNR FDW2502P Si6933DQ s4 35 diode marking code
    Text: Si6933DQ Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		Si6933DQ 2502P CBHK741B019 F63TNR FDW2502P s4 35 diode marking code PDF

    S-49538

    Abstract: Si6933DQ
    Text: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D 8 7 6 5 Si6933DQ D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		Si6933DQ S-49538--Rev. 06-Oct-97 S-49538 PDF

    SI6933DQ

    Abstract: No abstract text available
    Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET


    Original     		Si6933DQ 08-Apr-05 PDF

    SI6933DQ

    Abstract: No abstract text available
    Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2


    Original     		Si6933DQ Si6933DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI6933DQ

    Abstract: No abstract text available
    Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2


    Original     		Si6933DQ Si6933DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si6933DQ

    Abstract: No abstract text available
    Text: Si6933DQ Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6933DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		Si6933DQ S-49519--Rev. 18-Dec-96 PDF

    Si6933DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6933DQ S-60147Rev. 13-Feb-06 PDF

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    MOSFET TSSOP-8 dual n-channel

    Abstract: MOSFET TSSOP-8 FDW2520C "MOSFET TSSOP-8" Complementary MOSFETs FDW254P FDW2501N FDW2501NZ FDW2503N FDW2503NZ
    Text: Discrete MOSFET TSSOP-8 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TSSOP-8 N-Channel FDW2509NZ 20 Dual - 0.002 0.026 - 13 7.1 1.6 FDW2501N 20 Dual - 0.018 0.028 - 14 6


    Original     		FDW2509NZ FDW2501N FDW2501NZ FDW2507N FDW2507NZ FDW2503NZ FDW2503N FDW9926A FDW2502PZ FDW2504P MOSFET TSSOP-8 dual n-channel MOSFET TSSOP-8 FDW2520C "MOSFET TSSOP-8" Complementary MOSFETs FDW254P FDW2501N FDW2501NZ FDW2503N FDW2503NZ PDF

    Untitled

    Abstract: No abstract text available
    Text: - Thi s Documentcan notbe used wi thoutSamsung' s authori zati on - 10. PartList 1 Main Board Main Board Location SEC Code Name Specification Quantity B504 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,- 1 B510 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,-


    Original     		PDF

    MMZ1608S121AT

    Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV


    Original     		945GMS BA41-00680A BA41-00683A Pag614 TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 MMZ1608S121AT nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2 PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF

    schematic diagram TCON lcd samsung

    Abstract: T-CON BOARD samsung schematic diagram tcon samsung C319B samsung nc110 samsung T-CON Schematic T-CON Schematic samsung T-CON LCD samsung nc108 cs5845
    Text: 4 2 3 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4


    Original     		80PORT SW950 SW955 SW954 SW953 41-C4 PGB1010603NR schematic diagram TCON lcd samsung T-CON BOARD samsung schematic diagram tcon samsung C319B samsung nc110 samsung T-CON Schematic T-CON Schematic samsung T-CON LCD samsung nc108 cs5845 PDF