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    SI5915DC Price and Stock

    Vishay Siliconix SI5915DC-T1-E3

    MOSFET 2P-CH 8V 3.4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5915DC-T1-E3 Reel 3,000
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    • 10000 $0.6875
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    Vishay Siliconix SI5915DC-T1-GE3

    MOSFET 2P-CH 8V 3.4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5915DC-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI5915DC-T1

    MOSFET Transistor, Matched Pair, P-Channel, CHIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI5915DC-T1 15,313
    • 1 $0.66
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    SI5915DC-T1 2,156
    • 1 $1.1
    • 10 $1.1
    • 100 $1.1
    • 1000 $0.44
    • 10000 $0.385
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    SI5915DC Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si5915DC Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5915DC Vishay Siliconix MOSFETs Original PDF
    SI5915DC-DS Vishay Telefunken DS-Spice Model for Si5915DC Original PDF
    Si5915DC SPICE Device Model Vishay Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5915DC-T1 Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5915DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 3.4A 1206-8 Original PDF
    SI5915DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 3.4A 1206-8 Original PDF

    SI5915DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si5915DC

    Abstract: No abstract text available
    Text: Si5915DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.070 @ VGS = –4.5 V –4.6 0.108 @ VGS = –2.5 V –3.7 0.162 @ VGS = –1.8 V –3.0 D TrenchFETr Power MOSFET D Low Thermal Resistance


    Original     		PDF Si5915DC S-04563--Rev. 27-Aug-01

    Untitled

    Abstract: No abstract text available
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V - 4.6 0.108 at VGS = - 2.5 V - 3.7 0.162 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5915DC 2002/95/EC Si5915DC-T1-E3 Si5915DC-T1-GE3 11-Mar-11

    Si5915DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5915DC 20-Sep-01

    Si5915DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5915DC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V - 4.6 0.108 at VGS = - 2.5 V - 3.7 0.162 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5915DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V - 4.6 0.108 at VGS = - 2.5 V - 3.7 0.162 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5915DC 2002/95/EC Si5915DC-T1-E3 Si5915DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5915DC

    Abstract: Si5915DC-T1
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7


    Original     		PDF Si5915DC Si5915DC-T1 S-21251--Rev. 05-Aug-02

    Si5915DC

    Abstract: Si5915DC-T1
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7


    Original     		PDF Si5915DC Si5915DC-T1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7


    Original     		PDF Si5915DC Si5915DC-T1 08-Apr-05

    Si5915DC

    Abstract: No abstract text available
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V - 4.6 0.108 at VGS = - 2.5 V - 3.7 0.162 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5915DC 2002/95/EC Si5915DC-T1-E3 18-Jul-08

    AN609

    Abstract: Si5915DC
    Text: Si5915DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5915DC AN609 27-Jun-07

    Si5915BDC

    Abstract: Si5915DC Si5915DC-T1
    Text: Specification Comparison Vishay Siliconix Si5915BDC vs. Si5915DC Description: Package: Pin Out: Dual N-Channel 8-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5915BDC-T1-E3 Replaces Si5915DC-T1-E3 Si5915BDC-T1-E3 Replaces Si5915DC-T1


    Original     		PDF Si5915BDC Si5915DC Si5915BDC-T1-E3 Si5915DC-T1-E3 Si5915DC-T1 30-Aug-07

    Si5915DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5915DC S-60146Rev. 13-Feb-06

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8