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    SI494 Price and Stock

    Vishay Siliconix SI4946BEY-T1-E3

    MOSFET 2N-CH 60V 6.5A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4946BEY-T1-E3 Cut Tape 14,221 1
    • 1 $2.02
    • 10 $1.288
    • 100 $2.02
    • 1000 $0.63405
    • 10000 $0.63405
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    SI4946BEY-T1-E3 Digi-Reel 14,221 1
    • 1 $2.02
    • 10 $1.288
    • 100 $2.02
    • 1000 $0.63405
    • 10000 $0.63405
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    RS SI4946BEY-T1-E3 Bulk 5,000 1
    • 1 $1.36
    • 10 $1.2
    • 100 $1.09
    • 1000 $1.02
    • 10000 $1.02
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    Quest Components SI4946BEY-T1-E3 1,824
    • 1 $1.2036
    • 10 $1.2036
    • 100 $1.2036
    • 1000 $0.5015
    • 10000 $0.4413
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    New Advantage Corporation SI4946BEY-T1-E3 2,500 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.5702
    • 10000 $0.5702
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    Vishay Siliconix SI4948BEY-T1-E3

    MOSFET 2P-CH 60V 2.4A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4948BEY-T1-E3 Cut Tape 13,579 1
    • 1 $1.85
    • 10 $1.179
    • 100 $1.85
    • 1000 $0.575
    • 10000 $0.575
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    RS SI4948BEY-T1-E3 Bulk 2,500
    • 1 -
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    • 10000 $1.27
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    New Advantage Corporation SI4948BEY-T1-E3 70,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5571
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    Vishay Siliconix SI4943CDY-T1-GE3

    MOSFET 2P-CH 20V 8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4943CDY-T1-GE3 Cut Tape 3,847 1
    • 1 $2.42
    • 10 $1.559
    • 100 $2.42
    • 1000 $0.78445
    • 10000 $0.78445
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    SI4943CDY-T1-GE3 Digi-Reel 3,847 1
    • 1 $2.42
    • 10 $1.559
    • 100 $2.42
    • 1000 $0.78445
    • 10000 $0.78445
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    SI4943CDY-T1-GE3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6875
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    Vishay Siliconix SI4948BEY-T1-GE3

    MOSFET 2P-CH 60V 2.4A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4948BEY-T1-GE3 Cut Tape 3,486 1
    • 1 $1.85
    • 10 $1.179
    • 100 $1.85
    • 1000 $0.575
    • 10000 $0.575
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    SI4948BEY-T1-GE3 Digi-Reel 3,486 1
    • 1 $1.85
    • 10 $1.179
    • 100 $1.85
    • 1000 $0.575
    • 10000 $0.575
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    SI4948BEY-T1-GE3 Reel 2,500 2,500
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    • 100 -
    • 1000 -
    • 10000 $0.51722
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    RS SI4948BEY-T1-GE3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.09
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    New Advantage Corporation SI4948BEY-T1-GE3 25,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5571
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    Vishay Siliconix SI4943CDY-T1-E3

    MOSFET 2P-CH 20V 8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4943CDY-T1-E3 Cut Tape 2,260 1
    • 1 $2.42
    • 10 $1.559
    • 100 $2.42
    • 1000 $0.78445
    • 10000 $0.78445
    		Buy Now
    SI4943CDY-T1-E3 Digi-Reel 2,260 1
    • 1 $2.42
    • 10 $1.559
    • 100 $2.42
    • 1000 $0.78445
    • 10000 $0.78445
    		Buy Now
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    SI494 Datasheets (59)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4940DY Vishay Intertechnology Dual N-Channel 40-V (D-S) MOSFET Original PDF
    SI4940DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET Original PDF
    Si4940DY SPICE Device Model Vishay Dual N-Channel 40-V (D-S) MOSFET Original PDF
    SI4940DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 4.2A 8-SOIC Original PDF
    SI4940DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 4.2A 8-SOIC Original PDF
    SI4941EDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 10A 8-SOIC Original PDF
    SI4942DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET Original PDF
    Si4942DY SPICE Device Model Vishay Dual N-Channel 40-V (D-S) MOSFET Original PDF
    SI4942DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 5.3A 8-SOIC Original PDF
    SI4942DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 5.3A 8-SOIC Original PDF
    SI4943BDY Vishay Siliconix MOSFETs Original PDF
    SI4943BDY-E3 Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI4943BDY-T1-E3 Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI4943BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6.3A 8-SOIC Original PDF
    SI4943BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6.3A 8-SOIC Original PDF
    SI4943CDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 8A 8-SOIC Original PDF
    SI4943CDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 8A 8-SOIC Original PDF
    Si4943DY Vishay Intertechnology Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI4943DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET Original PDF
    Si4943DY SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF

    SI494 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    *4947ad

    Abstract: No abstract text available
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4947ADY 2002/95/EC Si4947ADY-T1-E3 Si4947ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 *4947ad

    Si4948EY

    Abstract: No abstract text available
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 18-Jul-08

    Si4940DY

    Abstract: No abstract text available
    Text: Si4940DY New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.7 0.059 @ VGS = 4.5 V 4.4 D TrenchFETr Power MOSFET APPLICATIONS D Automotive Airbags D1 D2 SO-8 S1 1 8 D1 G1


    Original     		PDF Si4940DY S-04277--Rev. 16-Jul-01

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS


    Original     		PDF Si4941EDY Si4941EDY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4942DY 2002/95/EC Si4942DY-T1-E3 Si4942DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4947ADY 2002/95/EC Si4947ADY-T1-E3 Si4947ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4940DY

    Abstract: No abstract text available
    Text: New Product Si4940DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.036 at VGS = 10 V 5.7 0.059 at VGS = 4.5 V 4.4 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1 8 D1


    Original     		PDF Si4940DY Si4940DY-T1 Si4940DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4943CDY 2002/95/EC Si4943CDY-T1-E3 Si4943CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4948BEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4948BEY 18-Jul-08

    Si4947ADY

    Abstract: 39A2 Si4947ADY SPICE Device Model
    Text: SPICE Device Model Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4947ADY 18-Jul-08 39A2 Si4947ADY SPICE Device Model

    Si4946BEY-T1-E3

    Abstract: Si4946BEY SI4946BEY-T1-GE3
    Text: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 18-Jul-08

    AN609

    Abstract: Si4943BDY
    Text: Si4943BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4943BDY AN609 19-Mar-07

    SI4943CDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125°C Temperature Range


    Original     		PDF Si4943CDY S-81935-Rev. 08-Sep-08

    Si4943DY

    Abstract: No abstract text available
    Text: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems


    Original     		PDF Si4943DY 18-Jul-08

    mosfet 9519

    Abstract: 4017 SPICE MODEL 8206 AN609 Si4942DY 253027
    Text: Si4942DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4942DY AN609 19-Mar-07 mosfet 9519 4017 SPICE MODEL 8206 253027

    Si4947ADY

    Abstract: Si4947ADY-T1
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4947ADY


    Original     		PDF Si4947ADY Si4947ADY-T1 08-Apr-05

    Si4947DY

    Abstract: No abstract text available
    Text: Si4947DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4947DY S-49520--Rev. 18-Dec-96

    Si4948EY

    Abstract: No abstract text available
    Text: Si4948EY Dual P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4948EY S-49520--Rev. 18-Dec-96

    Si4947DY

    Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ 51296--Rev. 18-Dec-96

    si4944dy-t1-e3

    Abstract: No abstract text available
    Text: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT


    Original     		PDF Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4944DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4944DY 0-to-10V 16-Oct-03

    Si4940DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4940DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4940DY 0-to-10V 03-Jul-01

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4943CDY 2002/95/EC Si4943CDY-T1-E3 Si4943CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si9947DY

    Abstract: Si4947DY Si4953DY Si6955DQ si6955
    Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ


    Original     		PDF Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96 si6955