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Vishay Intertechnologies SI4943DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4943DY-T1		3,187			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4943DY-T1-E3 6300MA, 20V, 2 CHANNEL, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI4943DY-T1-E3		1,925			1 $1.45 10 $1.45 100 $1.45 1000 $0.58 10000 $0.5075	Buy Now

SI4943DY Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
Si4943DY		Vishay Intertechnology	Dual P-Channel 20-V (D-S) MOSFET		Original	PDF
SI4943DY		Vishay Siliconix	Dual P-Channel 20-V (D-S) MOSFET		Original	PDF
Si4943DY SPICE Device Model		Vishay	Dual P-Channel 20-V (D-S) MOSFET		Original	PDF

SI4943DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4943DY Abstract: No abstract text available Text: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems	Original	PDF	Si4943DY 18-Jul-08
Si4943BDY-T1-E3 Abstract: Si4943BDY Si4943DY Si4943DY-T1-E3 Text: Specification Comparison Vishay Siliconix Si4943BDY vs. Si4943DY Description: Dual P-Channel, 20 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4943BDY-T1 Replaces Si4943DY-T1 Si4943BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4943DY-T1-E3	Original	PDF	Si4943BDY Si4943DY Si4943BDY-T1 Si4943DY-T1 Si4943BDY-T1-E3 Si4943DY-T1-E3 08-Nov-06
Si4943DY Abstract: No abstract text available Text: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = –10 V –8.4 0.030 @ VGS = –4.5 V –6.7 D Load Switching – Computer – Game Systems	Original	PDF	Si4943DY S-04374--Rev. 06-Aug-01
Si4943DY Abstract: No abstract text available Text: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems	Original	PDF	Si4943DY S-21192--Rev. 29-Jul-02
Untitled Abstract: No abstract text available Text: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems	Original	PDF	Si4943DY 08-Apr-05
Si4943DY Abstract: No abstract text available Text: SPICE Device Model Si4943DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4943DY 0-to-10V 29-Jul-02
Untitled Abstract: No abstract text available Text: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = -10 V -8.4 0.030 @ VGS = -4.5 V - 6.7 D Load Switching - Computer - Game Systems	Original	PDF	Si4943DY S-21192--Rev. 29-Jul-02
4295 Abstract: u 4863 AN609 Si4943DY 7027-2 Text: Si4943DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4943DY AN609 20-Jan-06 4295 u 4863 7027-2